Abstract: An abnormality detection apparatus (200) includes storage means (210) for storing a learned self-encoder (211) including predetermined number of two or more of elements as input layers, extraction means (220) for extracting a target data group of a predetermined period including data pieces from time series data measured by one or more sensors, the number of the data pieces being the predetermined number, conversion means (230) for converting the target data group into multi-dimensional vector data including the predetermined number of elements, identifying means (240) for identifying a time period in which there may be a cause of an abnormality from the predetermined period based on a difference between output vector data having the predetermined number of elements obtained by inputting the multi-dimensional vector data to the self-encoder (211) and the multi-dimensional vector data, and output means (250) for outputting abnormality detection information including the identified time period.

Abstract: A biosignal electrode that includes a substrate having first and second opposed main surfaces; a conductive material pattern on the first main surface of the substrate, the conductive material pattern defining a plurality of open spaces extending through the conductive material pattern and exposing the first surface of the substrate therethrough; and a biocompatible glue material within the plurality of open spaces of the conductive material pattern.

Abstract: A metal fine particle-containing ink that contains metal fine particles dispersed therein with a polymer dispersant, a low-molecular weight carboxylic acid and an aqueous solvent, wherein the polymer dispersant contains a constitutional unit derived from an acid group-containing monomer; a content of the low-molecular weight carboxylic acid C in the ink is not less than 1% by mass and not more than 15% by mass. A boiling point (C) of the low-molecular weight carboxylic acid and a boiling point (D) of the aqueous solvent satisfy the following relational formula (I); and an acid dissociation exponent pKa (C) of the low-molecular weight carboxylic acid and an acid dissociation exponent pKa (B) of an acid group in the polymer dispersant satisfy the following relational formula (II): boiling point (C)>boiling point (D) ??(I), and pKa (C)<pKa (B) ??(II).

Abstract: Provided is a semiconductor device comprising: a plurality of trench portions include a gate trench portion and a dummy trench portion; a first lower end region of a second conductivity type that is provided to be in contact with lower ends of two or more trench portions which include the gate trench portion; a well region of a second conductivity type that is arranged in a different location from the first lower end region in a top view, and a second lower end region of a second conductivity type that is provided between the first lower end region and the well region in a top view being separated from the first lower end region and the well region, and provided to be in contact with lower ends of one or more trench portions including the gate trench portion.

Abstract: Provided is a semiconductor device comprising: a plurality of trench portions; a first lower end region of a second conductivity type that is provided to be in contact with lower ends of two or more trench portions which include the gate trench portion; a well region of the second conductivity type that is arranged in a different location from the first lower end region in a top view, and a second lower end region of the second conductivity type that is provided between the first lower end region and the well region in a top view being separated from the first lower end region and the well region, and provided to be in contact with lower ends of one or more trench portions including the gate trench portion.

Abstract: The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: A front suspension device comprises a suspension arm, one end of which has a front-wheel support portion to support a front wheel of a vehicle and the other end of which is positioned on an inward side, in a vehicle width direction, of the front-wheel support portion and has a vehicle-body attachment portion to be attached to a vehicle-body member of the vehicle and a damper supported at a damper support portion which is provided at a portion of the suspension arm which is positioned in the vicinity of the front-wheel support portion at a lower portion thereof and connected to the vehicle-body member at an upper portion thereof. The damper support portion of the suspension arm has a breakage ease portion to cause breakage of the suspension arm.

Abstract: An oil dilution inhibiting apparatus is configured to inhibit oil dilution caused by mixture of fuel into engine oil. The oil dilution inhibiting apparatus includes a control unit. The control unit is configured to estimate friction of an engine and determine that the oil dilution occurs when the friction of the engine is decreased to a value lower than or equal to a predetermined threshold value to perform control so that the engine is operated at a higher speed.

Abstract: An information processing device mounted on a vehicle including a sensor includes an acquisition unit that acquires a surrounding image of the vehicle and information related to a behavior of the vehicle from the sensor, and an identification unit that identifies a moving object in the surrounding image of the vehicle based on a chronological change of the surrounding image of the vehicle and the information related to the behavior of the vehicle.

Abstract: An information processing apparatus (2000) classifies each event that occurred in a target apparatus to be determined (10) either as an event (event of a first class) that also occurs in a standard apparatus (20) or as an event (event of a second class) that does not occur in the standard apparatus (20). Herein, a first model used for a determination with respect to an event that also occurs in the standard apparatus (20) and a second model used for a determination with respect to an event that does not occur in the standard apparatus (20) are used as models for determining whether an event that occurs in a target apparatus to be determined (10) is a target for warning. The information processing apparatus (2000) performs learning of the first model using an event of the first class. Further, the information processing apparatus (2000) performs learning of the second model using an event of the second class.

Abstract: A semiconductor device includes trench portions arrayed in a first direction on an upper surface side of a semiconductor substrate, a first conductivity type lower surface region provided in a part of a lower surface of the semiconductor substrate, a second conductivity type base region provided on the upper surface side, a first conductivity type first region disposed between the base region and the lower surface region, a first conductivity type upper surface region provided on an upper surface of the semiconductor substrate, and a second conductivity type bottom region disposed continuously in the first direction to be in contact with bottom portions of the trench portions. In a cross section along the first direction and perpendicular to the upper and lower surfaces and passing through the lower surface region, one end portion of the bottom region in the first direction locates directly above the lower surface region.

Abstract: A fabrication method for a semiconductor device includes measuring a thickness of a semiconductor substrate in which a bulk donor of a first conductivity type is entirely distributed, adjusting an implantation condition in accordance with the thickness of the semiconductor substrate and implanting hydrogen ions from a lower surface of the semiconductor substrate to an upper surface side of the semiconductor substrate, and annealing the semiconductor substrate and forming, in a passage region through which the hydrogen ions have passed, a first high concentration region of the first conductivity type in which a donor concentration is higher than a doping concentration of the bulk donor.

Abstract: To enable a user to easily recognize temporal order of elements included in a retrieval sentence, a retrieval sentence utilization device 10 includes: a retrieval sentence division unit 11 for dividing a retrieval sentence into a plurality of retrieval contents each of which includes an event; and a directed graph generation unit 12 for generating, from each of the retrieval contents, a subtree in which the event is an edge and a source of the event and an object of the event are nodes, and integrating a plurality of subtrees generated from the retrieval contents to generate a directed graph, wherein the directed graph generation unit 12 places the plurality of subtrees in the directed graph according to occurrence order of events corresponding to the plurality of subtrees.

Abstract: There is provided a semiconductor device including: an emitter region of a first conductivity type, a contact region of a second conductivity type, provided on the front surface side of the semiconductor substrate; one or more first trench portions which are electrically connected to a gate electrode and are in contact with emitter regions; a second trench portion which is adjacent to one of the one or more first trench portions, is electrically connected to the gate electrode, is in contact with the contact region of the second conductivity type, and is not in contact with the emitter region; and a dummy trench portion which is adjacent to one of the one or more first trench portions and is electrically connected to an emitter electrode, in which the contact region in contact with the second trench portion is in contact with the emitter electrode.

Abstract: Provided is a semiconductor device including: a semiconductor substrate having a drift region of a first conductivity type; an active portion, in which at least one of a transistor portion and a diode portion is provided, in the semiconductor substrate; and an edge termination structure portion provided farther outward than the active portion in the semiconductor substrate, wherein the edge termination structure portion has a plurality of guard rings of a second conductivity type provided in contact with an upper surface of the semiconductor substrate, and an embedded dielectric film arranged between two guard rings and at least partially embedded in the semiconductor substrate, and the guard rings are provided up to a position below the embedded dielectric film.

Abstract: Provided is a semiconductor device including a semiconductor substrate having a first dopant of a first conductivity type and a second dopant of a second conductivity type, both the first dopant and the second dopant being distributed in an entire part of the semiconductor substrate, the semiconductor substrate including a drift region of the first conductivity type, a dielectric film provided on an upper surface of the semiconductor substrate, a high concentration region of the first conductivity type provided in contact with the dielectric film below the dielectric film and having a higher doping concentration than the drift region, and a fall off region that is provided in contact with the dielectric film below the dielectric film and in which a concentration of the dopant of the second conductivity type decreases toward the dielectric film.

Abstract: A fabrication method for a semiconductor device includes measuring a thickness of a semiconductor substrate in which a bulk donor of a first conductivity type is entirely distributed, adjusting an implantation condition in accordance with the thickness of the semiconductor substrate and implanting hydrogen ions from a lower surface of the semiconductor substrate to an upper surface side of the semiconductor substrate, and annealing the semiconductor substrate and forming, in a passage region through which the hydrogen ions have passed, a first high concentration region of the first conductivity type in which a donor concentration is higher than a doping concentration of the bulk donor.

Abstract: A learning device performs learning a facial recognition model so as to further reduce a triplet loss that uses a first facial image, a second facial image that is a candidate for an adversarial example of a same person as the first facial image, and a third facial image that is a candidate for an adversarial example of a different person than the first facial image.

Abstract: Provided is an information processing system including: a roadside apparatus placed at an entrance or an exit of a toll road or a pay facility; a display apparatus placed at the entrance or the exit; and a server capable of communicating with the roadside apparatus. The roadside apparatus includes: a radio communicator performing predetermined radio communications with an onboard apparatus loaded on the vehicle passing through the entrance or the exit; a communicator communicating with the server; and a processor transmitting user information regarding a user owning the vehicle received from the onboard apparatus via the radio communicator to the server via the communicator. The server includes a processor that: receives user information; when the user information is the user information regarding an advertiser, acquires advertisement information corresponding to the advertiser; and transmits an instruction to display the advertisement information on the display apparatus.

Abstract: A semiconductor device includes an edge terminal structure portion provided between the active portion and an end portion of the semiconductor substrate on an upper surface of the semiconductor substrate, in which the edge terminal structure portion has a first high concentration region of the first conductivity type which has a donor concentration higher than a doping concentration of the bulk donor in a region between the upper surface and a lower surface of the semiconductor substrate, an upper surface of the first high concentration region is located on an upper surface side of the semiconductor substrate, and a lower surface of the first high concentration region is located on a lower surface side of the semiconductor substrate.