Abstract: An IGBT (2), a diode (3), and a well region (4) are provided on a semiconductor substrate (1). The IGBT (2) includes a trench gate (6) provided on the first principal surface of the semiconductor substrate (1). The diode (3) includes a p-type anode layer (19) provided on the first principal surface of the semiconductor substrate (1). The well region (4) includes a p-type well layer (21) provided on the first principal surface of the semiconductor substrate (1), having an impurity concentration higher than that of the p-type anode layer (19), and having a depth larger than that of the trench gate (6). A terminal end of the trench gate (6) is surrounded by the p-type well layer (21). The diode (3) is provided on an outer side of the IGBT (2) in the semiconductor substrate (1). The well region (4) is provided on an outer side of the diode (3) in the semiconductor substrate (1).

Abstract: Disclosed is a cell classification method, to be executed by an analyzer, for classifying cells contained in a specimen, including: preparing a first measurement sample by treating a specimen under a first preparation condition; obtaining a first signal from the prepared first measurement sample; classifying, by using the first signal, cells contained in the first measurement sample; preparing a second measurement sample by treating the specimen under a second preparation condition different from the first preparation condition; obtaining a second signal from the prepared second measurement sample; classifying, by using the second signal, cells contained in the second measurement sample; and comparing a result of the cell classification performed by using the first signal and a result of the cell classification performed by using the second signal, with each other, and outputting an analysis result including a number of cells on the basis of a result of the comparison.

Abstract: A method of manufacturing a surface emitting laser according to an embodiment of the present disclosure includes the following two steps: (1) a step of forming a semiconductor stacked structure on a substrate, the semiconductor stacked structure including an active layer, a first DBR layer of a first electrical conduction type, and a second DBR layer of a second electrical conduction type, the first DBR layer and the second DBR layer sandwiching the active layer, the second electrical conduction type being different from the first electrical conduction type; and (2) a step of forming a mesa section at a portion on the second DBR layer side in the semiconductor stacked structure and then forming an annular diffusion region of the first electrical conduction type at an outer edge of the mesa section by impurity diffusion from a side surface of the mesa section, the mesa section including the second DBR layer, the mesa section not including the active layer.

Abstract: A control unit performs control such that the mist is started to be sprayed in a horizontal direction or a downward direction from a spraying unit toward a subject on a basis of detection of the subject by a detection unit.

Abstract: A control unit performs control such that, in a state where water does not flow into a water path, an on-off valve is opened to supply air from a second air path to the water path and a mixed solution path to discharge residual water and thereafter supply of the air is stopped.

Abstract: During execution of steering reaction force control, when a lane change of a host vehicle is made, a vehicle control device sets a steering reaction force given to a steering operation in the direction of the lane change of the host vehicle to a reaction force of a smaller value than a reaction force of a standard value. Further, when a vehicle approach condition that another vehicle traveling in a lane on a side to which the lane of the host vehicle is to be changed is approaching the host vehicle from behind is met at the time when a lane change of the host vehicle is made, the vehicle control device does not set the steering reaction force given to the steering operation in the direction of the lane change of the host vehicle to a reaction force of a value smaller than the standard value.

Abstract: A spray device (A) according to the present disclosure includes: a two-fluid nozzle (11) which sprays a mist (91); a spray-device-side gas flow path (12) for supplying a gas to the two-fluid nozzle (11); a gas supply source (17) which supplies the gas to the spray-device-side gas flow path (12); a spray-device-side liquid flow path (13) for supplying a liquid to the two-fluid nozzle (11); a liquid supply source (18) which supplies the liquid to the spray-device-side liquid flow path (13); a pulse-driven liquid flow control valve (14) having a valve opening degree that is adjusted according to a pulse signal to control the flow rate of the liquid in the spray-device-side liquid flow path (13); and a controller (30) which adjusts, in multiple levels, the concentration of the mist (91) sprayed from the two-fluid nozzle 11 by adjusting the valve opening degree of the liquid flow control valve 14.

Abstract: A semiconductor device according to the present invention includes a substrate having an IGBT region, a diode region, and a high resistance region between the IGBT region and the diode region, a first electrode provided on an upper surface of the substrate and a second electrode provided on a back surface as a surface on an opposite side to the upper surface of the substrate, wherein in the high resistance region, a contact resistance between the upper surface of the substrate and the first electrode or a contact resistance between the back surface of the substrate and the second electrode is higher than in the diode region, and a width of the high resistance region is equal to or greater than a thickness of the substrate.

Abstract: An IGBT (2), a diode (3), and a well region (4) are provided on a semiconductor substrate (1). The IGBT (2) includes a trench gate (6) provided on the first principal surface of the semiconductor substrate (1). The diode (3) includes a p-type anode layer (19) provided on the first principal surface of the semiconductor substrate (1). The well region (4) includes a p-type well layer (21) provided on the first principal surface of the semiconductor substrate (1), having an impurity concentration higher than that of the p-type anode layer (19), and having a depth larger than that of the trench gate (6). A terminal end of the trench gate (6) is surrounded by the p-type well layer (21). The diode (3) is provided on an outer side of the IGBT (2) in the semiconductor substrate (1). The well region (4) is provided on an outer side of the diode (3) in the semiconductor substrate (1).

Abstract: A semiconductor device according to the present invention includes a substrate having an IGBT region, a diode region, and a high resistance region between the IGBT region and the diode region, a first electrode provided on an upper surface of the substrate and a second electrode provided on a back surface as a surface on an opposite side to the upper surface of the substrate, wherein in the high resistance region, a contact resistance between the upper surface of the substrate and the first electrode or a contact resistance between the back surface of the substrate and the second electrode is higher than in the diode region, and a width of the high resistance region is equal to or greater than a thickness of the substrate.

Abstract: An oxide film (4) is provided on an upper surface of the semiconductor substrate (1). A guard ring (3) is provided on the upper surface of the semiconductor substrate (1). An organic insulating film (6) directly contacts the oxide film (4) in a termination region (7) between the guard ring (3) and an outer edge portion of the semiconductor substrate (1). A groove (8) is provided on the upper surface of the semiconductor substrate (1) in the termination region (7). The groove (8) is embedded with the organic insulating film (6).

Abstract: A gate electrode is formed in a trench formed in a semiconductor substrate. A gate interlayer insulating film is formed to cover the gate electrode and the like. A gate interconnection and an emitter electrode are formed in contact with the gate interlayer insulating film. A glass coating film and a polyimide film are formed to cover the gate interconnection and the emitter electrode. A solder layer is formed to cover the polyimide film. The gate interconnection and the emitter electrode are each formed of a tungsten film, for example.

Abstract: A gate electrode is formed in a trench formed in a semiconductor substrate. A gate interlayer insulating film is formed to cover the gate electrode and the like. A gate interconnection and an emitter electrode are formed in contact with the gate interlayer insulating film. A glass coating film and a polyimide film are formed to cover the gate interconnection and the emitter electrode. A solder layer is formed to cover the polyimide film. The gate interconnection and the emitter electrode are each formed of a tungsten film, for example.

Abstract: A gate electrode is formed in a trench formed in a semiconductor substrate. A gate interlayer insulating film is formed to cover the gate electrode and the like. A gate interconnection and an emitter electrode are formed in contact with the gate interlayer insulating film. A glass coating film and a polyimide film are formed to cover the gate interconnection and the emitter electrode. A solder layer is formed to cover the polyimide film. The gate interconnection and the emitter electrode are each formed of a tungsten film, for example.

Abstract: A gate electrode is formed in a trench formed in a semiconductor substrate. A gate interlayer insulating film is formed to cover the gate electrode and the like. A gate interconnection and an emitter electrode are formed in contact with the gate interlayer insulating film. A glass coating film and a polyimide film are formed to cover the gate interconnection and the emitter electrode. A solder layer is formed to cover the polyimide film. The gate interconnection and the emitter electrode are each formed of a tungsten film, for example.

Abstract: An impeller according to the present disclosure includes a hub and wings. Each of the wings has a leading edge portion and a body portion. The leading edge portion is positioned on an upper surface side of the hub. The body portion is positioned on a lower surface side of the hub. A tip of the leading edge portion and a tip of the body portion extend from the upper surface side of the hub toward the lower surface side of the hub on a side opposite to a side where the wing is in contact with the hub. In a plan view of the wing seen from a radial direction perpendicular to an axis of the impeller, a profile of the tip of the leading edge portion has a linear shape and a profile of the tip of the body portion has a curved shape.