Abstract: A sulfide solid electrolyte particles comprising lithium, phosphorus and sulfur, having a volume-based average particle size measured by laser diffraction particle size distribution measurement of 0.1 ?m or more and 10 ?m or less, having a diffraction peak having 2? ranging from 29.0 to 31.0 deg in powder X-ray diffraction measurement using CuK? ray, and an intensity ratio (Ib/Ip) of a peak intensity Ip of the diffraction peak to a diffraction intensity Ib at a high angle-side low part of the diffraction peak is less than 0.09.

Abstract: A sulfide solid electrolyte containing lithium, phosphorus, sulfur, and two or more of elements X selected from halogen elements, where the sulfide solid electrolyte includes an argyrodite-type crystal structure, and a molar ratio of the sulfur to the phosphorus “b (S/P)” and a molar ratio of the element X to the phosphorus “c (X/P)” satisfy the following formula (1): 0.23<c/b<0.57??(1).

Abstract: Provided is a sulfide solid electrolyte containing lithium, phosphorus, sulfur and chlorine, in which a molar ratio of the chlorine to the phosphorus, c (Cl/P), is greater than 1.0 and 1.9 or less, the sulfide solid electrolyte includes an argyrodite-type crystal structure, and a lattice constant of the argyrodite-type crystal structure is 9.820 ? or less.

Abstract: A sulfide solid electrolyte that contains lithium, phosphorus, sulfur, chlorine and bromine, wherein in powder X-ray diffraction analysis using CuK? rays, it has a diffraction peak A at 2?=25.2±0.5 deg and a diffraction peak B at 2?=29.7±0.5 deg, the diffraction peak A and the diffraction peak B satisfy the following formula (A), and a molar ratio of the chlorine to the phosphorus “c (Cl/P)” and a molar ratio of the bromine to the phosphorus “d (Br/P)” satisfies the following formula (1): 1.2<c+d<1.9??(1) 0.845<SA/SB<1.200??(A) where SA is an area of the diffraction peak A and SB is an area of the diffraction peak B.

Abstract: A sulfide solid electrolyte that contains lithium, phosphorus, sulfur, chlorine and bromine, wherein in powder X-ray diffraction analysis using CuK? rays, it has a diffraction peak A at 2?=25.2±0.5 deg and a diffraction peak B at 2?=29.7±0.5 deg, the diffraction peak A and the diffraction peak B satisfy the following formula (A), and a molar ratio of the chlorine to the phosphorus “c (Cl/P)” and a molar ratio of the bromine to the phosphorus “d (Br/P)” satisfies the following formula (1): 1.2<c+d<1.9??(1) 0.845<SA/SB<1.200??(A) where SA is an area of the diffraction peak A and SB is an area of the diffraction peak B.

Abstract: A sulfide solid electrolyte containing lithium, phosphorus, sulfur; and one or more of elements X selected from the group consisting of halogen elements and chalcogen elements excluding sulfur, wherein the sulfide solid electrolyte includes an argyrodite-type crystal structure, and wherein a molar ratio of the lithium to the phosphorus, a (Li/P), a molar ratio of the sulfur to the phosphorus, b (S/P), and a molar ratio of the element X to the phosphorus, c (X/P), satisfy formulas (1) to (3): 5.0?a?7.1 (1) 1.0<a?b?1.5 (2) 6.5?a+c<7.1 (3) wherein b>0 and c>0 are satisfied.

Abstract: A sulfide solid electrolyte that contains lithium, phosphorus, sulfur, chlorine and bromine, wherein in powder X-ray diffraction analysis using CuK? rays, it has a diffraction peak A at 2?=25.2±0.5 deg and a diffraction peak B at 2?=29.7±0.5 deg, the diffraction peak A and the diffraction peak B satisfy the following formula (A), and a molar ratio of the chlorine to the phosphorus “c (Cl/P)” and a molar ratio of the bromine to the phosphorus “d (Br/P)” satisfies the following formula (1): 1.2<c+d<1.9??(1) 0.845<SA/SB<1.200??(A) where SA is an area of the diffraction peak A and SB is an area of the diffraction peak B.

Abstract: A sulfide solid electrolyte containing lithium, phosphorus, sulfur, and two or more of elements X selected from halogen elements, where the sulfide solid electrolyte includes an argyrodite-type crystal structure, and a molar ratio of the sulfur to the phosphorus “b (S/P)” and a molar ratio of the element X to the phosphorus “c (X/P)” satisfy the following formula (1): 0.23<c/b<0.57??(1a).

Abstract: Aimed at providing a sulfide solid electrolyte comprising an argyrodite type crystal structure, having a high ionic conductivity due to presence of a large amount of a halogen element and is capable of suppressing agglomeration at the time of production. Provided is a sulfide solid electrolyte comprising lithium, phosphorus, sulfur and one or more elements X selected from halogen elements, wherein the sulfide solid electrolyte comprises an argyrodite type crystal structure, and wherein a molar ratio of the lithium to the phosphorus “a (Li/P)”, a molar ratio of the sulfur to the phosphorus “b (S/P)” and a molar ratio of the element X to the phosphorus “c (X/P)” satisfy the following formulas (1) to (3): 5.05?a<7.3??(1) 0.705?a?b<1.0??(2) 7.0<a+c?7.3??(3) provided that b>0 and c>0.

Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.

Abstract: A sputtering target including a sintered body including In, Ga and Mg, the sintered body including one or more compounds selected from a compound represented by In2O3, a compound represented by In(GaMg)O4, a compound represented by Ga2MgO4 and a compound represented by In2MgO4, and having an atomic ratio In/(In+Ga+Mg) of 0.5 or more and 0.9999 or less and an atomic ratio (Ga+Mg)/(In+Ga+Mg) of 0.0001 or more and 0.5 or less.

Abstract: A compound represented by the following formula (I), provided that the compound in which all of R1 to R14 are hydrogen atoms is excluded.

Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.

Abstract: A sputtering target including a sintered body including In, Ga and Mg, the sintered body including one or more compounds selected from a compound represented by In2O3, a compound represented by In(GaMg)O4, a compound represented by Ga2MgO4 and a compound represented by In2MgO4, and having an atomic ratio In/(In+Ga+Mg) of 0.5 or more and 0.9999 or less and an atomic ratio (Ga+Mg)/(In+Ga+Mg) of 0.0001 or more and 0.5 or less.

Abstract: An organic semiconductor material is represented by the following formula (1), wherein two or more of R1 to R6 are an alkyl group.

Abstract: A sintered body includes an indium oxide crystal, and an oxide solid-dissolved in the indium oxide crystal, the oxide being oxide of one or more metals selected from the group consisting of aluminum and scandium, the sintered body having an atomic ratio “(total of the one or more metals)/(total of the one or more metals and indium)×100)” of 0.001% or more and less than 45%.

Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.

Abstract: A compound represented by the following formula (I), provided that the compound in which all of R1 to R14 are hydrogen atoms is excluded.

Abstract: A sintered body includes an indium oxide crystal, and an oxide solid-dissolved in the indium oxide crystal, the oxide being oxide of one or more metals selected from the group consisting of aluminum and scandium, the sintered body having an atomic ratio “(total of the one or more metals)/(total of the one or more metals and indium)×100)” of 0.001% or more and less than 45%.

Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.