Abstract: The present disclosure relates to an organic light-emitting device including an insulating layer, an organic light-emitting element disposed on the main surface of the insulating layer, and a color filter layer covering the organic light-emitting element and including a first color filter that passes light with a first wavelength and a second color filter that passes light with a second wavelength different from the first wavelength, wherein the concentration of an organic alkali having a nitrogen atom and a hydroxy group contained in the color filter layer is less than 108.2 ng/cm2.

Abstract: An organic device comprising a pixel region in which pixels are arranged, a peripheral region including a pad electrode, and a sealing layer arranged to cover the pixel and peripheral regions, is provided. In the peripheral region, an opening of the sealing layer is formed. The opening comprises a first portion extending from a plane defined by an upper surface of the sealing layer towards the pad electrode, and a second portion which has an outer edge inside outer edges of the first portion and the pad electrode and opens from a lower end of the first portion to the pad electrode. A conductive particle for electrical connection to an electrode is arranged on the pad electrode, and a diameter of the conductive particle is larger than a height of the second portion.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: An embodiment is an imaging apparatus including a plurality of unit cells. The imaging apparatus includes a first conductive member electrically connected to gates of the plurality of first transfer transistors, a second conductive member electrically connected to gates of the plurality of second transfer transistors, a third conductive member disposed adjacently to the first conductive member in a same wiring layer as the first conductive member and electrically connected to a plurality of nodes each included in respective one of the plurality of unit cells, and a fourth conductive member disposed adjacently to the second conductive member in a same wiring layer as the second conductive member. An opposing length of the first conductive member and the third conductive member is longer than an opposing length of the second conductive member and the fourth conductive member.

Abstract: An embodiment is an imaging apparatus including a plurality of unit cells. The imaging apparatus includes a first conductive member electrically connected to gates of the plurality of first transfer transistors, a second conductive member electrically connected to gates of the plurality of second transfer transistors, a third conductive member disposed adjacently to the first conductive member in a same wiring layer as the first conductive member and electrically connected to a plurality of nodes each included in respective one of the plurality of unit cells, and a fourth conductive member disposed adjacently to the second conductive member in a same wiring layer as the second conductive member. An opposing length of the first conductive member and the third conductive member is longer than an opposing length of the second conductive member and the fourth conductive member.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: Disclosed herein is a liquid crystal display device comprising a liquid crystal held between a pair of bases each equipped with at least a transparent electrode, and pixels each having at least four color regions which are divided from one another, wherein the four color regions in one pixel comprise a first region in which a filter for red is arranged to display a red color, a second region in which a filter for blue is arranged to display a blue color, a third region in which a filter for green is arranged to display a green color, and a fourth region in which a filter for red, a filter for blue and a filter for green are arranged to display a color.