Abstract: A semiconductor device (1) includes a first metal wiring layer (11) formed on a substrate (10), an interlayer insulating film (12) formed on the first metal wiring layer (11), a second metal wiring layer (23) formed on the interlayer insulating film (12), a first resistor including a first resistance metal film (14a) formed between the first metal wiring layer (11) and the second metal wiring layer (23), a first insulating film (15a) formed on the first resistance metal film (14a), and a second resistance metal film (16a) formed on the first insulating film (15a), and a second resistor including a first resistance metal film (14b) formed between the first metal wiring layer (11) and the second metal wiring layer (23), a first insulating film (15b) formed on the first resistance metal film (14b), and a second resistance metal film (16b) formed on the first insulating film (15b).

Abstract: A semiconductor device (1) includes a first metal wiring layer (11) formed on a substrate (10), an interlayer insulating film (12) formed on the first metal wiring layer (11), a second metal wiring layer (23) formed on the interlayer insulating film (12), a first resistor including a first resistance metal film (14a) formed between the first metal wiring layer (11) and the second metal wiring layer (23), a first insulating film (15a) formed on the first resistance metal film (14a), and a second resistance metal film (16a) formed on the first insulating film (15a), and a second resistor including a first resistance metal film (14b) formed between the first metal wiring layer (11) and the second metal wiring layer (23), a first insulating film (15b) formed on the first resistance metal film (14b), and a second resistance metal film (16b) formed on the first insulating film (15b).

Abstract: A two-layered polysilicon capacitive element is manufactured to enable suppression of both of an increase in the applied electric field dependence of the capacitance value and the initial defect of the dielectric film. Included are a lower electrode into which phosphorous ions are implanted, a dielectric film formed on the lower electrode, and an upper electrode formed on the dielectric film. The dielectric film includes a thermal oxide film formed by partially oxidizing a polysilicon film constituting the lower electrode and etching out its outer layer part, and a deposited oxide film formed on the thermal oxide film.

Abstract: A two-layered polysilicon capacitive element is manufactured to enable suppression of both of an increase in the applied electric field dependence of the capacitance value and the initial defect of the dielectric film. Included are a lower electrode into which phosphorous ions are implanted, a dielectric film formed on the lower electrode, and an upper electrode formed on the dielectric film. The dielectric film includes a thermal oxide film formed by partially oxidizing a polysilicon film constituting the lower electrode and etching out its outer layer part, and a deposited oxide film formed on the thermal oxide film.