Abstract: A semiconductor package and a semiconductor light-emitting device including the semiconductor package. The semiconductor package includes: a frame for mounting a semiconductor light-emitting element; and a lead integral with the frame. The frame and the lead are made of a resin. A metal film is located in a predetermined area on the frame.

Abstract: A semiconductor package and a semiconductor light-emitting device including the semiconductor package. The semiconductor package includes: a frame for mounting a semiconductor light-emitting element; and a lead integral with the frame. The frame and the lead are made of a resin. A metal film is located in a predetermined area on the frame.

Abstract: According to this invention, an SAW electric part includes an SAW filter and an SAW oscillator formed on a substrate having the same temperature characteristics as those of a substrate on which the SAW filter is formed. A frequency converter includes the SAW electric part, a second local oscillation circuit, a frequency converter, a first mixer, and a second mixer. The second local oscillation circuit oscillates a second local oscillation signal using the SAW oscillator. The frequency converter converts a frequency of the second local oscillation signal to generate a first local oscillation signal. The first mixer mixes the first local oscillation signal with an input signal to output a composite signal to the SAW filter. The second mixer mixes an output from the SAW filter with the second local oscillation signal to output a frequency conversion signal.

Abstract: In a method of manufacturing a semiconductor device, after forming a mask for blocking ion implantation in a predetermined position on the main surface of a silicon substrate, oxygen ions are implanted from the direction making an angle of about 45.degree. with respect to the main surface while intermittently changing the implantation energy and the dose in a suitable manner. This process of oxygen ion implantation is carried out with the silicon substrate being rotated in a plane parallel to the surface. According to the process above, an element isolation film is formed surrounding a portion below an active region in the silicon substrate only by the process of oxygen ion implantation and a heat treatment process after that.

Abstract: A band-pass filter includes a first filter, a second filter, and switching elements. The first filter is constituted by a plurality of filter elements. The second filter is constituted by a plurality of filter means and connected in series with the first filter. The switching elements can short-circuit either one of the first and second filters.