Patents by Inventor Kou-Liang Chao
Kou-Liang Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11007828Abstract: A valve stem structure disposed at a rim of a tire of a vehicle for connecting to an electronic tire pressure monitoring device in the tire is provided. The valve stem structure includes a tube, an air core, and a conducting wire. The tube has a first inlet, a first outlet communicating with an inner space of the tire, and a second outlet. The air core is switchably disposed at the first inlet, and a compressed air is injected into the tire via the first inlet and the first outlet by switching the air core. The conducting wire is disposed in the tube, and an end of the conducting wire extends out of the tube via the second outlet to be electrically connected to the electronic tire pressure monitoring device. A power source charges the electronic tire pressure monitoring device via the conducting wire.Type: GrantFiled: December 24, 2018Date of Patent: May 18, 2021Assignee: One Unique Inc.Inventors: Yuan-Lung Cheng, Kou-Liang Chao, Chieh-Yi Sung
-
Publication number: 20190193491Abstract: A valve stem structure disposed at a rim of a tire of a vehicle for connecting to an electronic tire pressure monitoring device in the tire is provided. The valve stem structure includes a tube, an air core, and a conducting wire. The tube has a first inlet, a first outlet communicating with an inner space of the tire, and a second outlet. The air core is switchably disposed at the first inlet, and a compressed air is injected into the tire via the first inlet and the first outlet by switching the air core. The conducting wire is disposed in the tube, and an end of the conducting wire extends out of the tube via the second outlet to be electrically connected to the electronic tire pressure monitoring device. A power source charges the electronic tire pressure monitoring device via the conducting wire.Type: ApplicationFiled: December 24, 2018Publication date: June 27, 2019Applicant: One Unique Inc.Inventors: Yuan-Lung Cheng, Kou-Liang Chao, Chieh-Yi Sung
-
Patent number: 9219170Abstract: A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage.Type: GrantFiled: October 29, 2014Date of Patent: December 22, 2015Assignee: PFC DEVICE HOLDINGS LTDInventors: Kou-Liang Chao, Mei-Ling Chen, Tse-Chuan Su, Hung-Hsin Kuo
-
Publication number: 20150054115Abstract: A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage.Type: ApplicationFiled: October 29, 2014Publication date: February 26, 2015Inventors: Kou-Liang CHAO, Mei-Ling CHEN, Tse-Chuan SU, Hung-Hsin KUO
-
Patent number: 8927401Abstract: A trench Schottky diode and its manufacturing method are provided. The trench Schottky diode includes a semiconductor substrate having therein a plurality of trenches, a gate oxide layer, a polysilicon structure, a guard ring and an electrode. At first, the trenches are formed in the semiconductor substrate by an etching step. Then, the gate oxide layer and the polysilicon structure are formed in the trenches and protrude above a surface of the semiconductor substrate. The guard ring is formed to cover a portion of the resultant structure. At last, the electrode is formed above the guard ring and the other portion not covered by the guard ring. The protruding gate oxide layer and the protruding polysilicon structure can avoid cracks occurring in the trench structure.Type: GrantFiled: January 7, 2013Date of Patent: January 6, 2015Assignee: PFC Device Corp.Inventors: Kou-Liang Chao, Hung-Hsin Kuo, Tse-Chuan Su, Mei-Ling Chen
-
Patent number: 8921949Abstract: A MOS P-N junction diode includes a semiconductor substrate, a mask layer, a guard ring, a gate oxide layer, a polysilicon structure, a central conductive layer, a silicon nitride layer, a metal diffusion layer, a channel region, and a metal sputtering layer. For manufacturing the MOS P-N junction diode, a mask layer is formed on a semiconductor substrate. A gate oxide layer is formed on the semiconductor substrate, and a polysilicon structure is formed on the gate oxide layer. A guard ring, a central conductive layer and a channel region are formed in the semiconductor substrate. A silicon nitride layer is formed on the central conductive layer. A metal diffusion layer is formed within the guard ring and the central conductive layer. Afterwards, a metal sputtering layer is formed, and the mask layer is partially exposed.Type: GrantFiled: December 26, 2012Date of Patent: December 30, 2014Assignee: PFC Device Corp.Inventors: Kou-Liang Chao, Hung-Hsin Kuo, Tse-Chuan Su, Mei-Ling Chen
-
Patent number: 8890279Abstract: A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage.Type: GrantFiled: November 15, 2013Date of Patent: November 18, 2014Assignee: PFC Device Corp.Inventors: Kou-Liang Chao, Mei-Ling Chen, Tse-Chuan Su, Hung-Hsin Kuo
-
Publication number: 20140077328Abstract: A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage.Type: ApplicationFiled: November 15, 2013Publication date: March 20, 2014Applicant: PFC DEVICE CORP.Inventors: Kou-Liang CHAO, Mei-Ling CHEN, Tse-Chuan SU, Hung-Hsin KUO
-
Patent number: 8618626Abstract: A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage.Type: GrantFiled: October 12, 2010Date of Patent: December 31, 2013Assignee: PFC Device CorporationInventors: Kou-Liang Chao, Mei-Ling Chen, Tse-Chuan Su, Hung-Hsin Kuo
-
Patent number: 8558315Abstract: A trench isolation metal-oxide-semiconductor (MOS) P-N junction diode device and a manufacturing method thereof are provided. The trench isolation MOS P-N junction diode device is a combination of an N-channel MOS structure and a lateral P-N junction diode, wherein a polysilicon-filled trench oxide layer is buried in the P-type structure to replace the majority of the P-type structure. As a consequence, the trench isolation MOS P-N junction diode device of the present invention has the benefits of the Schottky diode and the P-N junction diode. That is, the trench isolation MOS P-N junction diode device has rapid switching speed, low forward voltage drop, low reverse leakage current and short reverse recovery time.Type: GrantFiled: July 26, 2011Date of Patent: October 15, 2013Assignee: PFC Device CorporationInventors: Mei-Ling Chen, Hung-Hsin Kuo, Kou-Liang Chao
-
Patent number: 8405184Abstract: A trench Schottky diode and its manufacturing method are provided. The trench Schottky diode includes a semiconductor substrate having therein a plurality of trenches, a gate oxide layer, a polysilicon structure, a guard ring and an electrode. At first, the trenches are formed in the semiconductor substrate by an etching step. Then, the gate oxide layer and the polysilicon structure are formed in the trenches and protrude above a surface of the semiconductor substrate. The guard ring is formed to cover a portion of the resultant structure. At last, the electrode is formed above the guard ring and the other portion not covered by the guard ring. The protruding gate oxide layer and the protruding polysilicon structure can avoid cracks occurring in the trench structure.Type: GrantFiled: June 28, 2010Date of Patent: March 26, 2013Assignee: PFC Device CorporationInventors: Kou-Liang Chao, Hung-Hsin Kuo, Tse-Chuan Su, Mei-Ling Chen
-
Publication number: 20120261751Abstract: A method for manufacturing a rectifier with a vertical MOS structure is provided. A first trench structure and a first mask layer are formed at a first side of the semiconductor substrate. A second trench structure is formed in the second side of the semiconductor substrate. A gate oxide layer, a polysilicon structure and a metal sputtering layer are sequentially formed on the second trench structure. The rectifier further includes a wet oxide layer and a plurality of doped regions. The wet oxide layer is formed on a surface of the first multi-trench structure and in the semiconductor substrate. The doping regions are formed on a region between the semiconductor substrate and the second trench structure, and located beside the mask layer. The metal sputtering layer is formed on the first mask layer corresponding to the first trench structure.Type: ApplicationFiled: April 13, 2012Publication date: October 18, 2012Applicant: PFC DEVICE CORP.Inventors: Kou-Liang Chao, Mei-Ling Chen, Hung-Hsin Kuo
-
Publication number: 20120049287Abstract: A trench isolation metal-oxide-semiconductor (MOS) P-N junction diode device and a manufacturing method thereof are provided. The trench isolation MOS P-N junction diode device is a combination of an N-channel MOS structure and a lateral P-N junction diode, wherein a polysilicon-filled trench oxide layer is buried in the P-type structure to replace the majority of the P-type structure. As a consequence, the trench isolation MOS P-N junction diode device of the present invention has the benefits of the Schottky diode and the P-N junction diode. That is, the trench isolation MOS P-N junction diode device has rapid switching speed, low forward voltage drop, low reverse leakage current and short reverse recovery time.Type: ApplicationFiled: July 26, 2011Publication date: March 1, 2012Applicant: PFC DEVICE CORPORATIONInventors: Mei-Ling Chen, Hung-Hsin Kuo, Kou-Liang Chao
-
Publication number: 20110084353Abstract: A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage.Type: ApplicationFiled: October 12, 2010Publication date: April 14, 2011Applicant: PFC DEVICE CORPORATIONInventors: Kou-Liang CHAO, Mei-Ling Chen, Tse-Chuan Su, Hung-Hsin Kuo
-
Publication number: 20100327288Abstract: A trench Schottky diode and its manufacturing method are provided. The trench Schottky diode includes a semiconductor substrate having therein a plurality of trenches, a gate oxide layer, a polysilicon structure, a guard ring and an electrode. At first, the trenches are formed in the semiconductor substrate by an etching step. Then, the gate oxide layer and the polysilicon structure are formed in the trenches and protrude above a surface of the semiconductor substrate. The guard ring is formed to cover a portion of the resultant structure. At last, the electrode is formed above the guard ring and the other portion not covered by the guard ring. The protruding gate oxide layer and the protruding polysilicon structure can avoid cracks occurring in the trench structure.Type: ApplicationFiled: June 28, 2010Publication date: December 30, 2010Applicant: PFC DEVICE CORPORATIONInventors: Kou-Liang CHAO, Hung-Hsin Kuo, Tse-Chuan Su, Mei-Ling Chen