Abstract: A wavelength division multiplexing (WDM) transistor-outline (TO)-can assembly is provided that is capable of transmitting optical data signals having multiple wavelengths. The WDM TO-can assembly can be packaged in a relatively small package without requiring a large amount of plant retooling or capital investment, and that can be made available in the market relatively quickly. A plurality of the WDM TO-can assemblies can be incorporated into a small form factor or C form factor pluggable-type optical communications module to achieve high data rates.

Abstract: Wavelength division multiplexing and demultiplexing (WDM) TOSA and ROSA TO-can assemblies are provided that are capable of transmitting and receiving optical data signals, respectively, having more than three wavelengths, that can be packaged in smaller packages than those used for existing BOSAs and tri-OSAs, that can be manufactured without requiring a large amount of plant retooling or capital investment, and that can be made available in the market relatively quickly.

Abstract: A wavelength division multiplexing (WDM) transistor-outline (TO)-can assembly is provided that is capable of transmitting optical data signals having multiple wavelengths. The WDM TO-can assembly can be packaged in a relatively small package without requiring a large amount of plant retooling or capital investment, and that can be made available in the market relatively quickly. A plurality of the WDM TO-can assemblies can be incorporated into a small form factor or C form factor pluggable-type optical communications module to achieve high data rates.

Abstract: Wavelength division multiplexing and demultiplexing (WDM) TOSA and ROSA TO-can assemblies are provided that are capable of transmitting and receiving optical data signals, respectively, having more than three wavelengths, that can be packaged in smaller packages than those used for existing BOSAs and tri-OSAs, that can be manufactured without requiring a large amount of plant retooling or capital investment, and that can be made available in the market relatively quickly.

Abstract: Various types of optoelectronic components are housed inside a standard TO-can package. In a first exemplary embodiment, a sub-assembly is mounted on a substrate of a TO-can package such that a major surface of the sub-assembly is oriented orthogonal to a major surface of the substrate. The sub-assembly includes a light emitter and a light directing element that is arranged at a fixed distance from the light emitter prior to mounting of the sub-assembly on the substrate. The fixed distance is based on a first mounted distance formed between the light directing element and an optical window of the TO-can package when the sub-assembly is mounted on the substrate. In a second exemplary embodiment, a planar lightwave circuit incorporating an optical waveguide combiner, is mounted on the substrate of a TO-can package. The planar lightwave circuit includes two light emitters emitting light at different wavelengths into the optical waveguide combiner.

Abstract: The present invention provides an optoelectronic device, a method of manufacture therefor and an optical communications system including the same. In an exemplary embodiment, the optoelectronic device includes a wavelength locking device that comprises a low reflector and optical filter. The optical filter an optical filter is located between the low reflector and an input end of the wavelength locking device. The optical filter and low reflector cooperate to lock an oscillation wavelength of a radiation source to a wavelength substantially determined by the optical filter.

Abstract: Implantation of a Group V ion species (e.g., phosphorus or arsenic) into an In-based Group III-V compound semiconductor (e.g., InP, InGaAs) followed by implantation of Be ions produces a shallow p-type surface layer and avoids significant in-diffusion of the dopant species. High carrier concentrations and activation efficiences are attained. The technique has application in the fabrication of FETs, APDs and ohmic contacts.

Abstract: Implantation of a Group V ion species (e.g., phosphorus or arsenic) into an In-based Group III-V compound semiconductor (e.g., InP, InGaAs) followed by implantation of Be ions produces a shallow p-type surface layer and avoids significant in-diffusion of the dopant species. High carrier concentrations and activation efficiencies are attained. The technique has application in the fabrication of FETs, APDs and ohmic contacts.