Abstract: A group III element nitride single crystal is grown on a template immersed in a raw material liquid retained in a crucible and containing a group III material and one of an alkali metal and an alkali earth metal. The raw material liquid remaining after the growth of the single crystal is cooled and solidified, and by feeding a hydroxyl group-containing solution into the crucible, the solidified raw material is removed from around the template, and thus the group III element nitride single crystal is taken out from inside the solidified raw material. The template is disposed at a position away from the bottom of the crucible.

Abstract: Provided are a nitric oxide detection element capable of detecting NO gas contained in a mixed gas at a high speed even when the amount thereof is a super trace amount of ten and several parts per billion; and a process for producing the element. In a nitric oxide detection element having a substrate 12 and a sensing film 11 formed on a surface of the substrate, the sensing film is composed of nitric oxide sensing particles and a polymer adhesive. The nitric oxide sensing particles are produced by adsorbing a dye having a porphyrin skeleton and having, as a central metal, divalent cobalt onto surfaces of inorganic particles.

Abstract: A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

Abstract: A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

Abstract: The nitrogen oxide sensing element of the present invention is such that a sensing film (11) is formed on the surface of a substrate (12a), the sensing film including a polymer containing as dispersed therein a porphyrin containing cobalt as a central metal, or a single derivative having a porphyrin skeleton containing cobalt as a central metal or a mixture of derivatives each having a porphyrin skeleton containing cobalt as a central metal; thus, this sensing element is capable of determining the concentration of NO with high sensitivity and satisfactory accuracy under the condition that the cobalt porphyrin is not affected by reaction inhibitors such as O2 and CO even in the atmosphere.

Abstract: Provided are a nitric oxide detection element capable of detecting NO gas contained in a mixed gas at a high speed even when the amount thereof is a super trace amount of ten and several parts per billion; and a process for producing the element. In a nitric oxide detection element having a substrate 12 and a sensing film 11 formed on a surface of the substrate, the sensing film is composed of nitric oxide sensing particles and a polymer adhesive. The nitric oxide sensing particles are produced by adsorbing a dye having a porphyrin skeleton and having, as a central metal, divalent cobalt onto surfaces of inorganic particles.

Abstract: Provided is a nitric oxide detection element which is capable of measuring a trace amount of NO gas contained in a gas in a scale of several ppb and of which the time degradation in performance is suppressed. The nitric oxide detection element includes at a surface thereof: a dye having a porphyrin skeleton and containing divalent cobalt as a central metal; and a radical scavenger. The nitric oxide detection element includes a substrate 12 and a sensing film 11 formed on a surface of the substrate 12. The sensing film 11 may contain the dye and the radical scavenger.

Abstract: A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

Abstract: The nitrogen oxide sensing element of the present invention is such that a sensing film (11) is formed on the surface of a substrate (12a), the sensing film including a polymer containing as dispersed therein a porphyrin containing cobalt as a central metal, or a single derivative having a porphyrin skeleton containing cobalt as a central metal or a mixture of derivatives each having a porphyrin skeleton containing cobalt as a central metal; thus, this sensing element is capable of determining the concentration of NO with high sensitivity and satisfactory accuracy under the condition that the cobalt porphyrin is not affected by reaction inhibitors such as O2 and CO even in the atmosphere.

Abstract: A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

Abstract: Disclosed is a method for producing a group III nitride crystal substrate. A group III nitride crystal is formed by a growth method using a flux. The group III nitride crystal substrate is heat treated at a temperature equal to or higher than the lowest temperature at which the flux contained inside the group III nitride crystal substrate through intrusion into the crystal during the crystal formation can be discharged to outside the group III nitride crystal substrate, and equal to or lower than the highest temperature at which the surface of the group III nitride crystal substrate is not decomposed.

Abstract: A group III element nitride single crystal is grown on a template immersed in a raw material liquid retained in a crucible and containing a group III material and one of an alkali metal and an alkali earth metal. The raw material liquid remaining after the growth of the single crystal is cooled and solidified, and by feeding a hydroxyl group-containing solution into the crucible, the solidified raw material is removed from around the template, and thus the group III element nitride single crystal is taken out from inside the solidified raw material. The template is disposed at a position away from the bottom of the crucible.

Abstract: A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

Abstract: There is provided a phased array antenna having variable phase shifters constituted by using a variable dielectric-constant dielectric substance whose dielectric constant varies according to an applied electric field, which antenna can dispense with a DC blocking element that causes mismatch, and reduce deformation of the beam shape even when beam tilt occurs, in the case where the variable phase shifters are divided into those for right-side tilt and those for left-side tilt and the phase shift amounts thereof are independently controlled.

Abstract: The present invention relates to a flexible printed circuit board which has extremely high adhesion performance and on which very fine circuit patterns can be formed by etching, and to a method for producing the same. In the present invention, in the flexible printed circuit board wherein a copper thin film made of copper or an alloy containing primarily copper is directly formed on at least one side of a plastic film substrate, and copper is formed further on the copper thin film by the electrolytic plating method, the above-mentioned copper thin film has a two-layer structure in which a layer including at least a crystalline structure is formed on the surface side thereof, and the X-ray relative intensity ratio between crystal lattice plane indices (200)/(111) in the above-mentioned crystalline structure is 0.1 or less.

Abstract: The present invention relates to a flexible printed circuit board which has extremely high adhesion performance and on which very fine circuit patterns can be formed by etching, and to a method for producing the same. In the present invention, in the flexible printed circuit board wherein a copper thin film made of copper or an alloy containing primarily copper is directly formed on at least one side of a plastic film substrate, and copper is formed further on the copper thin film by the electrolytic plating method, the above-mentioned copper thin film has a two-layer structure in which a layer including at least a crystalline structure is formed on the surface side thereof, and the X-ray relative intensity ratio between crystal lattice plane indices (200)/(111) in the above-mentioned crystalline structure is 0.1 or less.

Abstract: A polarization analyzing apparatus includes: a light source for generating optical pulses; a light dividing part; an electromagnetic wave radiation part; a collimation part; a polarizer part; a light analyzer part; a condenser part; an optical time-delay part; an electromagnetic wave detector part; and a calculation part which Fourier-transforms time-resolved waveforms obtained by time-resolving electrical signals of s- and p-polarized electromagnetic waves reflected from a sample, and calculates amplitude and phase information of the s- and p-polarized electromagnetic waves.

Abstract: A time domain polarization analyzing apparatus that is able to derive the complex optical constant spectrum in the terahertz region of a sample without necessitating any reference measurement will be proposed.