Patents by Inventor Kouichi Yatsuda

Kouichi Yatsuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Processing device, electrode, electrode plate, and processing method
    Patent number: 8038835
    Abstract: A processing gas fed from a gas feed pipe (8) through a gas introducing port (9) flows first into an outer annular gas flow channel (20a), where it is circumferentially diffused, and then into an inner annular gas flow channel (20b) via a passageway (23), and from this inner annular gas flow channel (20b) it flows into a gas diffusion gap (7) in the back surface of a shower head (6) via a gas feed hole 25. Thereafter, the processing gas is diffused in the gas diffusion gap (7) and delivered from gas delivery holes (5) to a semiconductor wafer (W). This makes it possible to improve the uniformity of in-plane process, as compared with the prior art, and to make a uniform process.
    Type: Grant
    Filed: April 5, 2010
    Date of Patent: October 18, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Kazuichi Hayashi, Kouichi Yatsuda, Masafumi Urakawa
  • PROCESSING DEVICE, ELECTRODE, ELECTRODE PLATE, AND PROCESSING METHOD
    Publication number: 20100230386
    Abstract: A processing gas fed from a gas feed pipe (8) through a gas introducing port (9) flows first into an outer annular gas flow channel (20a), where it is circumferentially diffused, and then into an inner annular gas flow channel (20b) via a passageway (23), and from this inner annular gas flow channel (20b) it flows into a gas diffusion gap (7) in the back surface of a shower head (6) via a gas feed hole 25. Thereafter, the processing gas is diffused in the gas diffusion gap (7) and delivered from gas delivery holes (5) to a semiconductor wafer (W). This makes it possible to improve the uniformity of in-plane process, as compared with the prior art, and to make a uniform process.
    Type: Application
    Filed: April 5, 2010
    Publication date: September 16, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kazuichi HAYASHI, Kouichi Yatsuda, Masafumi Urakawa
  • Processing device, electrode, electrode plate, and processing method
    Publication number: 20050092435
    Abstract: A processing gas fed from a gas feed pipe (8) through a gas introducing port (9) flows first into an outer annular gas flow channel (20a), where it is circumferentially diffused, and then into an inner annular gas flow channel (20b) via a passageway (23), and from this inner annular gas flow channel (20b) it flows into a gas diffusion gap (7) in the back surface of a shower head (6) via a gas feed hole 25. Thereafter, the processing gas is diffused in the gas diffusion gap (7) and delivered from gas delivery holes (5) to a semiconductor wafer (W). This makes it possible to improve the uniformity of in-plane process, as compared with the prior art, and to make a uniform process.
    Type: Application
    Filed: September 24, 2004
    Publication date: May 5, 2005
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kazuichi Hayashi, Kouichi Yatsuda, Masafumi Urakawa