Patents by Inventor Kouichiroh Deguchi
Kouichiroh Deguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10804450Abstract: A manufacturing method of a flip-chip nitride semiconductor light emitting element includes a step of providing a nitride semiconductor light emitting element structure; a protective layer forming step; a first resist pattern forming step; a protective layer etching step; a first metal layer forming step; a first resist pattern removing step; a third metal layer forming step; a second resist pattern forming step; a second metal layer forming step; a second resist pattern removing step; and a third metal layer removing step.Type: GrantFiled: November 14, 2016Date of Patent: October 13, 2020Assignee: NICHIA CORPORATIONInventors: Akinori Yoneda, Hirofumi Kawaguchi, Kouichiroh Deguchi
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Publication number: 20170062686Abstract: A manufacturing method of a flip-chip nitride semiconductor light emitting element includes a step of providing a nitride semiconductor light emitting element structure; a protective layer forming step; a first resist pattern forming step; a protective layer etching step; a first metal layer forming step; a first resist pattern removing step; a third metal layer forming step; a second resist pattern forming step; a second metal layer forming step; a second resist pattern removing step; and a third metal layer removing step.Type: ApplicationFiled: November 14, 2016Publication date: March 2, 2017Applicant: NICHIA CORPORATIONInventors: Akinori YONEDA, Hirofumi KAWAGUCHI, Kouichiroh DEGUCHI
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Patent number: 9530950Abstract: A manufacturing method of a flip-chip nitride semiconductor light emitting element includes a step of providing a nitride semiconductor light emitting element structure; a protective layer forming step; a first resist pattern forming step; a protective layer etching step; a first metal layer forming step; a first resist pattern removing step; a third metal layer forming step; a second resist pattern forming step; a second metal layer forming step; a second resist pattern removing step; and a third metal layer removing step.Type: GrantFiled: November 18, 2015Date of Patent: December 27, 2016Assignee: NICHIA CORPORATIONInventors: Akinori Yoneda, Hirofumi Kawaguchi, Kouichiroh Deguchi
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Publication number: 20160079505Abstract: A manufacturing method of a flip-chip nitride semiconductor light emitting element includes a step of providing a nitride semiconductor light emitting element structure; a protective layer forming step; a first resist pattern forming step; a protective layer etching step; a first metal layer forming step; a first resist pattern removing step; a third metal layer forming step; a second resist pattern forming step; a second metal layer forming step; a second resist pattern removing step; and a third metal layer removing step.Type: ApplicationFiled: November 18, 2015Publication date: March 17, 2016Applicant: NICHIA CORPORATIONInventors: Akinori YONEDA, Hirofumi KAWAGUCHI, Kouichiroh DEGUCHI
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Patent number: 9231159Abstract: A method of manufacturing a flip-chip nitride semiconductor light emitting element includes steps of providing a nitride semiconductor light emitting element structure; forming an insulating protective layer on the nitride semiconductor light emitting element structure; forming a resist pattern having openings above an n-side electrode connecting surface and a p-side electrode connecting surface; etching the protective layer to expose the n-side electrode connecting surface and the p-side electrode connecting surface using the resist pattern as a mask; forming a first metal layer that becomes an n-side electrode and a p-side electrode, the first metal layer being formed as a continuous layer disposed on the n-side electrode connecting surface, the p-side electrode connecting surface and the resist pattern; forming a second metal layer that becomes metal bumps by electrolytic plating using the first metal layer as an electrode for the electrolytic plating; and removing the resist pattern.Type: GrantFiled: April 26, 2012Date of Patent: January 5, 2016Assignee: NICHIA CORPORATIONInventors: Akinori Yoneda, Hirofumi Kawaguchi, Kouichiroh Deguchi
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Patent number: 9093356Abstract: A semiconductor light emitting element comprises a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated; and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench penetrating the p-type semiconductor layer, the active layer and the n-type semiconductor layer.Type: GrantFiled: December 23, 2011Date of Patent: July 28, 2015Assignee: NICHIA CORPORATIONInventors: Nobuhiko Ubahara, Kouichiroh Deguchi, Takao Yamada
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Patent number: 8981420Abstract: A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal.Type: GrantFiled: May 18, 2006Date of Patent: March 17, 2015Assignee: Nichia CorporationInventors: Takeshi Kususe, Yoshiyuki Aihara, Daisuke Sanga, Kouichiroh Deguchi
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Patent number: 8878214Abstract: A semiconductor light emitting device comprises a semiconductor light emitting element comprising a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated, and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench. The semiconductor light emitting device further comprises a first transparent sealing resin covering at least a portion of the semiconductor light emitting element, the first transparent sealing resin comprising a plurality of first fluorescent particles, each of the first fluorescent particles having an individual average particle diameter. A width of the trench is smaller than an overall average of the individual average particle diameters of the first fluorescent particles.Type: GrantFiled: December 27, 2011Date of Patent: November 4, 2014Assignee: Nichia CorporationInventors: Nobuhiro Ubahara, Kouichiroh Deguchi, Takao Yamada
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Publication number: 20120273823Abstract: A nitride semiconductor light emitting element having a thick metal bump, and a method of manufacturing a flip-chip nitride semiconductor light emitting element including: a nitride semiconductor light emitting element structure having an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, which are laminated on a substrate, and an n-side electrode connecting surface for connecting an n-side electrode to the n-type nitride semiconductor layer and a p-side electrode connecting surface for connecting a p-side electrode to the p-type nitride semiconductor layer on the same plane side of the substrate, the n-side electrode being connected to the n-side electrode connecting surface and the p-side electrode being connected to the p-side electrode connecting surface; and metal bumps formed on the n-side electrode and the p-side electrode, with other manufacturing steps performed.Type: ApplicationFiled: April 26, 2012Publication date: November 1, 2012Inventors: Akinori YONEDA, Hirofumi Kawaguchi, Kouichiroh Deguchi
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Publication number: 20120161183Abstract: A semiconductor light emitting element comprises a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated; and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench penetrating the p-type semiconductor layer, the active layer and the n-type semiconductor layer.Type: ApplicationFiled: December 23, 2011Publication date: June 28, 2012Inventors: Nobuhiro UBAHARA, Kouichiroh DEGUCHI, Takao YAMADA
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Publication number: 20120161184Abstract: A semiconductor light emitting device comprises a semiconductor light emitting element comprising a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated, and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench. The semiconductor light emitting device further comprises a first transparent sealing resin covering at least a portion of the semiconductor light emitting element, the first transparent sealing resin comprising a plurality of first fluorescent particles, each of the first fluorescent particles having an individual average particle diameter. A width of the trench is smaller than an overall average of the individual average particle diameters of the first fluorescent particles.Type: ApplicationFiled: December 27, 2011Publication date: June 28, 2012Inventors: Nobuhiro Ubahara, Kouichiroh Deguchi, Takao Yamada
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Publication number: 20060261355Abstract: A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal.Type: ApplicationFiled: May 18, 2006Publication date: November 23, 2006Inventors: Takeshi Kususe, Yoshiyuki Aihara, Daisuke Sanga, Kouichiroh Deguchi