Patents by Inventor Kouichirou Tanaka
Kouichirou Tanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11923218Abstract: A development processing apparatus includes: a substrate holder that holds a substrate horizontally wherein the substrate includes a resist film; a rotator that rotates the substrate holder; first and second developer supplies that supply a developer to the substrate; and a liquid receiver that receives the developer from the substrate. The first developer supply is formed to have a length smaller than a diameter of the substrate. The second developer supply is formed to have a length equal to or larger than the diameter of the substrate. The liquid receiver includes first and second annular walls that are formed in an annular shape having a circular opening having a diameter larger than the diameter of the substrate. The first and second annular walls are movable up and down independently of each other, and a vertical distance between the first annular wall and the second annular wall is variable.Type: GrantFiled: February 17, 2021Date of Patent: March 5, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Kouichirou Tanaka, Masahiro Fukuda
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Patent number: 11774854Abstract: A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.Type: GrantFiled: October 4, 2022Date of Patent: October 3, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Yusaku Hashimoto, Kouichirou Tanaka, Masahiro Fukuda, Atsushi Ookouchi
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Patent number: 11720026Abstract: A developing treatment method performs a developing treatment on a resist film on a substrate. The method includes: a pattern forming step of forming a resist pattern by supplying a developing solution to the substrate and developing the resist film on the substrate; a coating step of coating the developed substrate with an aqueous solution of a water-soluble polymer; and a rinse step of cleaning the substrate by supplying a rinse solution to the substrate coated with the aqueous solution of the water-soluble polymer.Type: GrantFiled: December 15, 2017Date of Patent: August 8, 2023Assignee: Tokyo Electron LimitedInventors: Akiko Kai, Kousuke Yoshihara, Kouichirou Tanaka, Hiroshi Ichinomiya
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Patent number: 11693322Abstract: A liquid processing apparatus includes a substrate holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid onto a front surface of the substrate; a gas supply configured to supply a gas onto the front surface of the substrate; and a controller. The gas supply includes a diffusion nozzle which is provided with multiple discharge openings respectively elongated at different angles with respect to the front surface of the substrate. The controller performs controlling the gas supply to jet the gas from the diffusion nozzle onto a region of the front surface of the substrate including at least a central portion thereof in a state that the processing liquid is supplied on the front surface of the substrate.Type: GrantFiled: December 22, 2020Date of Patent: July 4, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Takuya Miura, Shougo Takahashi, Kouichirou Tanaka
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Publication number: 20230026275Abstract: A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.Type: ApplicationFiled: October 4, 2022Publication date: January 26, 2023Inventors: Yusaku HASHIMOTO, Kouichirou TANAKA, Masahiro FUKUDA, Atsushi OOKOUCHI
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Patent number: 11508589Abstract: When performing a liquid processing on a substrate W being rotated and removing a processing liquid by a cleaning liquid, a cleaning liquid nozzle 421 configured to discharge a cleaning liquid slantly with respect to a surface of the substrate W toward a downstream side of a rotational direction of the substrate W and a gas nozzle 411 configured to discharge a gas toward a position adjacent to a central portion side of the substrate W when viewed from a liquid arrival position R of the cleaning liquid are moved from the central portion side toward a peripheral portion side. A rotation number of the substrate is varied such that rotation number in a period during which the liquid arrival position R moves in the second region becomes smaller than a maximum rotation number in a period during which the liquid arrival position moves in the first region.Type: GrantFiled: September 24, 2018Date of Patent: November 22, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Akiko Kai, Kouichirou Tanaka, Hiroshi Ichinomiya, Masahiro Fukuda
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Patent number: 11480881Abstract: A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.Type: GrantFiled: July 26, 2021Date of Patent: October 25, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Yusaku Hashimoto, Kouichirou Tanaka, Masahiro Fukuda, Atsushi Ookouchi
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Patent number: 11325426Abstract: A tire comprises a tread portion comprising at least one circumferentially continuously extending main groove, and a land portion divided by the above-said at least one main groove, wherein the land portion is provided with straight sipes and curved sipes each extending in the tire axial direction.Type: GrantFiled: September 13, 2018Date of Patent: May 10, 2022Assignee: SUMITOMO RUBBER INDUSTRIES, LTD.Inventor: Kouichirou Tanaka
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Publication number: 20220035248Abstract: A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.Type: ApplicationFiled: July 26, 2021Publication date: February 3, 2022Inventors: Yusaku HASHIMOTO, Kouichirou TANAKA, Masahiro FUKUDA, Atsushi OOKOUCHI
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Publication number: 20210333707Abstract: A nozzle unit for a liquid treatment apparatus that performs a liquid treatment on a substrate using a liquid, includes a first gas nozzle having a discharge flow path for allowing a first gas to flow through the discharge flow path and a first discharge port for discharging the first gas flowing through the discharge flow path toward a surface of the substrate, wherein the first discharge port is formed so as to extend in a first direction along the surface, and wherein a width of the discharge flow path in the first direction increases as the discharge flow path approaches the first discharge port, so that the first gas is discharged radially from the first discharge port.Type: ApplicationFiled: April 23, 2021Publication date: October 28, 2021Inventors: Takuya MIURA, Kouichirou TANAKA, Shogo TAKAHASHI, Yusuke MIYAKUBO, Kentaro YOSHIHARA
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Publication number: 20210272826Abstract: A development processing apparatus includes: a substrate holder that holds a substrate horizontally wherein the substrate includes a resist film; a rotator that rotates the substrate holder; first and second developer supplies that supply a developer to the substrate; and a liquid receiver that receives the developer from the substrate. The first developer supply is formed to have a length smaller than a diameter of the substrate. The second developer supply is formed to have a length equal to or larger than the diameter of the substrate. The liquid receiver includes first and second annular walls that are formed in an annular shape having a circular opening having a diameter larger than the diameter of the substrate. The first and second annular walls are movable up and down independently of each other, and a vertical distance between the first annular wall and the second annular wall is variable.Type: ApplicationFiled: February 17, 2021Publication date: September 2, 2021Inventors: Kouichirou TANAKA, Masahiro FUKUDA
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Patent number: 11079679Abstract: A method includes forming a liquid puddle of a mixed solution of the diluting liquid and the processing liquid; rotating the substrate at a first rotation speed which allows the mixed solution located at a region facing an inner side than an edge of the liquid contact surface to stay between the liquid contact surface and the surface of the substrate and allows the mixed solution located at a region facing an outer side than the edge of the liquid contact surface to be diffused toward an edge of the substrate; rotating the substrate at a second rotation speed smaller than the first rotation speed after the substrate is rotated at the first rotation speed; and moving the nozzle toward the edge of the substrate while discharging the processing liquid from the discharge hole in a state that the substrate is rotated at the second rotation speed.Type: GrantFiled: October 18, 2019Date of Patent: August 3, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Yusaku Hashimoto, Takeshi Shimoaoki, Masahiro Fukuda, Kouichirou Tanaka
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Publication number: 20210191271Abstract: A liquid processing apparatus includes a substrate holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid onto a front surface of the substrate; a gas supply configured to supply a gas onto the front surface of the substrate; and a controller. The gas supply includes a diffusion nozzle which is provided with multiple discharge openings respectively elongated at different angles with respect to the front surface of the substrate. The controller performs controlling the gas supply to jet the gas from the diffusion nozzle onto a region of the front surface of the substrate including at least a central portion thereof in a state that the processing liquid is supplied on the front surface of the substrate.Type: ApplicationFiled: December 22, 2020Publication date: June 24, 2021Inventors: Takuya Miura, Shougo Takahashi, Kouichirou Tanaka
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Publication number: 20200064742Abstract: A developing treatment method for performing a developing treatment on a resist film on a substrate, includes: a pattern forming step of forming a resist pattern by supplying a developing solution to the substrate and developing the resist film on the substrate; a coating step of coating the developed substrate with an aqueous solution of a water-soluble polymer; and a rinse step of cleaning the substrate by supplying a rinse solution to the substrate coated with the aqueous solution of the water-soluble polymer.Type: ApplicationFiled: December 15, 2017Publication date: February 27, 2020Inventors: Akiko KAI, Kousuke YOSHIHARA, Kouichirou TANAKA, Hiroshi ICHINOMIYA
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Publication number: 20200050111Abstract: A method includes forming a liquid puddle of a mixed solution of the diluting liquid and the processing liquid; rotating the substrate at a first rotation speed which allows the mixed solution located at a region facing an inner side than an edge of the liquid contact surface to stay between the liquid contact surface and the surface of the substrate and allows the mixed solution located at a region facing an outer side than the edge of the liquid contact surface to be diffused toward an edge of the substrate; rotating the substrate at a second rotation speed smaller than the first rotation speed after the substrate is rotated at the first rotation speed; and moving the nozzle toward the edge of the substrate while discharging the processing liquid from the discharge hole in a state that the substrate is rotated at the second rotation speed.Type: ApplicationFiled: October 18, 2019Publication date: February 13, 2020Inventors: Yusaku Hashimoto, Takeshi Shimoaoki, Masahiro Fukuda, Kouichirou Tanaka
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Patent number: 10406864Abstract: A tire includes a tread portion provided with at least one circumferentially and continuously extending shoulder main groove and at least one circumferentially and continuously extending crown main groove. The at least one crown main groove extends in a straight manner in a tire circumferential direction. The at least one shoulder main groove includes narrow segments inclined at angles with respect to the tire circumferential direction and wide segments each having widths greater than widths of the narrow segments. The narrow segments and the wide segments are arranged alternately in the tire circumferential direction so as to form a zigzag groove shape, wherein the widths of the narrow segments are in a range of from 5% to 7% of a tread width.Type: GrantFiled: November 3, 2016Date of Patent: September 10, 2019Assignee: SUMITOMO RUBBER INDUSTRIES, LTD.Inventor: Kouichirou Tanaka
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Publication number: 20190105950Abstract: A tire comprises a tread portion comprising at least one circumferentially continuously extending main groove, and a land portion divided by the above-said at least one main groove, wherein the land portion is provided with straight sipes and curved sipes each extending in the tire axial direction.Type: ApplicationFiled: September 13, 2018Publication date: April 11, 2019Applicant: Sumitomo Rubber Industries, Ltd.Inventor: Kouichirou TANAKA
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Publication number: 20190096706Abstract: When performing a liquid processing on a substrate W being rotated and removing a processing liquid by a cleaning liquid, a cleaning liquid nozzle 421 configured to discharge a cleaning liquid slantly with respect to a surface of the substrate W toward a downstream side of a rotational direction of the substrate W and a gas nozzle 411 configured to discharge a gas toward a position adjacent to a central portion side of the substrate W when viewed from a liquid arrival position R of the cleaning liquid are moved from the central portion side toward a peripheral portion side. A rotation number of the substrate is varied such that rotation number in a period during which the liquid arrival position R moves in the second region becomes smaller than a maximum rotation number in a period during which the liquid arrival position moves in the first region.Type: ApplicationFiled: September 24, 2018Publication date: March 28, 2019Inventors: Akiko Kai, Kouichirou Tanaka, Hiroshi Ichinomiya, Masahiro Fukuda
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Patent number: 10203605Abstract: A development method includes: a development step of supplying a developing solution to a surface of a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure, to perform development; a first rotation step of, after the development step, increasing revolution speed of the substrate to rotate the substrate in a first rotational direction around a central axis so as to spin off and remove part of the developing solution from the substrate; and a second rotation step of, after the first rotation step, rotating the substrate in a second rotational direction reverse to the first rotational direction so as to spin off and remove the developing solution remaining on the substrate from the substrate.Type: GrantFiled: February 28, 2017Date of Patent: February 12, 2019Assignee: Tokyo Electron LimitedInventors: Yusaku Hashimoto, Takeshi Shimoaoki, Masahiro Fukuda, Kouichirou Tanaka
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Patent number: 10185220Abstract: A substrate processing method includes steps of: supplying a developer onto a substrate surface from a discharge port while the substrate is rotated at a first rotation speed and a liquid contact surface faces the surface, and moving the nozzle while the liquid contact surface contacts with the developer so that a liquid film of the developer is formed on the surface; rotating the substrate at a second rotation speed slower than the first rotation speed, after the liquid film is formed, in a state where supply of the developer is stopped; rotating the substrate at a third rotation speed faster than the first rotation speed, after the substrate is rotated at the second rotation speed; and reducing rotation speed of the substrate to the second rotation speed or less, after the substrate is rotated at the third rotation speed, so that the liquid film is held on the surface.Type: GrantFiled: September 12, 2016Date of Patent: January 22, 2019Assignee: Tokyo Electron LimitedInventors: Yusaku Hashimoto, Takeshi Shimoaoki, Masahiro Fukuda, Kouichirou Tanaka