Patents by Inventor Kouichirou Tsutahara

Kouichirou Tsutahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6568996
    Abstract: The object of the present invention is to provide a polishing agent for processing semiconductor, which can control coagulation and sedimentation and has stable and re-productive polishing properties under a proper dispersing condition to prevent generation of polishing flaw. The polishing agent for processing semiconductor comprises a compound having glucose structure, polishing particles and water.
    Type: Grant
    Filed: April 19, 2001
    Date of Patent: May 27, 2003
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Toshio Kobayashi, Toshiyuki Toyoshima, Suguru Nagae, Masanobu Iwasaki, Kouichirou Tsutahara, Shin Hasegawa
  • Publication number: 20020039875
    Abstract: The object of the present invention is to provide a polishing agent for processing semiconductor, which can control coagulation and sedimentation and has stable and re-productive polishing properties under a proper dispersing condition to prevent generation of polishing flaw. The polishing agent for processing semiconductor comprises a compound having glucose structure, polishing particles and water.
    Type: Application
    Filed: April 19, 2001
    Publication date: April 4, 2002
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Toshio Kobayashi, Toshiyuki Toyoshima, Suguru Nagae, Masanobu Iwasaki, Kouichirou Tsutahara, Shin Hasegawa
  • Patent number: 5976260
    Abstract: It is an object of the present invention to obtain a vacuum chucking which can vacuum suck a wafer even if dusts attach thereon. The main body of vacuum chuck (101) has a plurality of block grooves (125) on the surface on which the wafer (1) is sucked and fixed, in which vacuum evacuation paths (105) each for vacuum evacuating each block groove (125) are provided for each block groove (125). When the wafer (1) is sucked and fixed under low pressure, even if the degree of vacuum in one of the block grooves (125) decreases due to attachment of dusts on part of the suction surface, or the like, the wafer (1) can surely be sucked and held.
    Type: Grant
    Filed: March 7, 1996
    Date of Patent: November 2, 1999
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yoshimi Kinoshita, Tomoyuki Kanda, Katsuhisa Kitano, Kazuo Yoshida, Hiroshi Ohnishi, Kenichiro Yamanishi, Shigeo Sasaki, Hideki Komori, Taizo Eshima, Kouichirou Tsutahara, Toshihiko Noguchi, Toru Takahama, Yoshihiko Kusakabe, Takeshi Iwamoto, Nobuyuki Kosaka
  • Patent number: 5803938
    Abstract: A liquid vaporizing apparatus includes a container for holding a liquid at a constant temperature with a temperature adjustment unit and a gas that does not react with the liquid is bubbled through the liquid in the container to vaporize the liquid. The container for holding the liquid has an internal space above the liquid and a second temperature adjustment unit for controlling the temperature of the internal space separately from the temperature of the liquid in the container. Since the internal space is maintained at a constant temperature, higher than the temperature of the liquid, the quantity of the vaporized liquid produced is stable.
    Type: Grant
    Filed: May 15, 1997
    Date of Patent: September 8, 1998
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Ryoden Semiconductor System Engineering Corporation
    Inventors: Tooru Yamaguchi, Kouichirou Tsutahara, Takayuki Suenaga
  • Patent number: 5785902
    Abstract: A liquid vaporizing apparatus includes a container for holding a liquid at a constant temperature with a temperature adjustment unit and a gas that does not react with the liquid is bubbled through the liquid in the container to vaporize the liquid. The container for holding the liquid has an internal space above the liquid and a second temperature adjustment unit for controlling the temperature of the internal space separately from the temperature of the liquid in the container. Since the internal space is maintained at a constant temperature, higher than the temperature of the liquid, the quantity of the vaporized liquid produced is stable.
    Type: Grant
    Filed: May 5, 1997
    Date of Patent: July 28, 1998
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Ryoden Semiconductor System Engineering Corporation
    Inventors: Tooru Yamaguchi, Kouichirou Tsutahara, Takayuki Suenaga
  • Patent number: 5662838
    Abstract: A liquid vaporizing apparatus includes a container for holding a liquid at a constant temperature with a temperature adjustment unit and a gas that does not react with the liquid is bubbled through the liquid in the container to vaporize the liquid. The container for holding the liquid has an internal space above the liquid and a second temperature adjustment unit for controlling the temperature of the internal space separately from the temperature of the liquid in the container. Since the internal space is maintained at a constant temperature, higher than the temperature of the liquid, the quantity of the vaporized liquid produced is stable.
    Type: Grant
    Filed: January 26, 1996
    Date of Patent: September 2, 1997
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Ryoden Semiconductor System Engineering Corporation
    Inventors: Tooru Yamaguchi, Kouichirou Tsutahara, Takayuki Suenaga
  • Patent number: 5534073
    Abstract: It is an object of the present invention to obtain a vacuum chucking which can vacuum suck a wafer even if dusts attach thereon. The main body of vacuum chuck (101) has a plurality of block grooves (125) on the surface on which the wafer (1) is sucked and fixed, in which vacuum evacuation paths (105) each for vacuum evacuating each block groove (125) are provided for each block groove (125). When the wafer(1) is sucked and fixed under low pressure, even if the degree of vacuum in one of the block grooves (125) decreases due to attachment of dusts on part of the suction surface, or the like, the wafer (1) can surely be sucked and held.
    Type: Grant
    Filed: September 7, 1993
    Date of Patent: July 9, 1996
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yoshimi Kinoshita, Tomoyuki Kanda, Katsuhisa Kitano, Kazuo Yoshida, Hiroshi Ohnishi, Kenichiro Yamanishi, Shigeo Sasaki, Hideki Komori, Taizo Eshima, Kouichirou Tsutahara, Toshihiko Noguchi, Toru Takahama, Yoshihiko Kusakabe, Takeshi Iwamoto, Nobuyuki Kosaka
  • Patent number: 5520858
    Abstract: A liquid vaporizing apparatus includes a container for holding a liquid at a constant temperature with a temperature adjustment unit and a gas that does not react with the liquid is bubbled through the liquid in the container to vaporize the liquid. The container for holding the liquid has an internal space above the liquid and a second temperature adjustment unit for controlling the temperature of the internal space separately from the temperature of the liquid in the container. Since the internal space is maintained at a constant temperature, higher than the temperature of the liquid, the quantity of the vaporized liquid produced is stable.
    Type: Grant
    Filed: July 25, 1994
    Date of Patent: May 28, 1996
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Ryoden Semiconductor System Engineering Corporation
    Inventors: Tooru Yamaguchi, Kouichirou Tsutahara, Takayuki Suenaga
  • Patent number: 5076207
    Abstract: An atmospheric CVD apparatus includes a gas head for ejecting reaction gases consisting of SiH.sub.4 gas and O.sub.2 gas, and a stage which is arranged at a position above the gas head and which is rotated while a semiconductor wafer retained on the bottom of the stage is heated to a temperature in the range of 380.degree. C. to 440.degree. C., the distance between the surface of the semiconductor wafer and the gas supply head being set in the range of 8 mm to 25 mm. The flow ratio between the reaction gases is so adjusted that when the flow rate of the O.sub.2 gas is represented as 1.0, that of the SiH.sub.4 gas is represented as 0.07 to 0.10. The apparatus deposits a reaction product film which excels in film thickness uniformity with a satisfactory level of reproducibility.
    Type: Grant
    Filed: July 7, 1989
    Date of Patent: December 31, 1991
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Akihiro Washitani, Masashi Ohmori, Kouichirou Tsutahara, Toru Yamaguchi
  • Patent number: 5025133
    Abstract: A semiconductor wafer heating device includes a hollow heating stage. A semiconductor wafer is disposed over one surface of the heating stage and a heater is provided over the other surface thereof. A fluid having an excellent heat conductivity which is filled in the hollow space of the heating stage is stirred uniformly. In consequence, the surface temperature of the heating stage can be made uniform without employing a thick heating stage, and an excellent temperature control of the heating stage can be ensured.
    Type: Grant
    Filed: July 3, 1989
    Date of Patent: June 18, 1991
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kouichirou Tsutahara, Hiroshi Tanaka