Patents by Inventor Kouji Daihou

Kouji Daihou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductive GaAs wafer and method of making the same
    Patent number: 7318916
    Abstract: A semiconductive GaAs wafer has a diameter of 4 inches or more, and an in-wafer plane dislocation density of 30,000/cm2 or more and 100,000/cm2 or less. A semiconductive GaAs wafer is made by growing a GaAs single crystal under a temperature gradient of 20° C./cm or more and 150° C./cm or less formed in the crystal so that the semiconductive GaAs wafer has an in-wafer plane dislocation density of 30,000/cm2 or more and 100,000/cm2 or less.
    Type: Grant
    Filed: January 30, 2006
    Date of Patent: January 15, 2008
    Assignee: Hitachi Cable, Ltd.
    Inventors: Shinji Yabuki, Michinori Wachi, Kouji Daihou
  • Semiconductive GaAs wafer and method of making the same
    Publication number: 20060169944
    Abstract: A semiconductive GaAs wafer has a diameter of 4 inches or more, and an in-wafer plane dislocation density of 30,000/cm2 or more and 100,000/cm2 or less. A semiconductive GaAs wafer is made by growing a GaAs single crystal under a temperature gradient of 20° C./cm or more and 150° C./cm or less formed in the crystal so that the semiconductive GaAs wafer has an in-wafer plane dislocation density of 30,000/cm2 or more and 100,000/cm2 or less.
    Type: Application
    Filed: January 30, 2006
    Publication date: August 3, 2006
    Applicant: Hitachi Cable, Ltd.
    Inventors: Shinji Yabuki, Michinori Wachi, Kouji Daihou