Abstract: The present disclosure discloses a technique, which reduces influence of not only environmental temperature but also environmental humidity, thereby preventing shortening of life of each electric element forming a power supply of a mass spectrometric instrument. The disclosure therefore provides a mass spectrometric instrument including: a circuit board on which electric elements are disposed; a gas supply unit; and a mechanism that controls humidity and temperature of gas supplied from the gas supply unit and applies the gas with the humidity and temperature controlled to at least part of the circuit board.

Abstract: An object of the invention is to provide a mass spectrometer capable of preventing a sample from remaining inside an ion source container for a long time. In the mass spectrometer according to the invention, in addition to a first gas used for ionizing an ion source, a second gas flowing toward an exhaust unit along an inner wall of the ion source container is supplied inside the ion source container (see FIG. 1).

Abstract: An object of the present invention is to provide means for solving troubles. Examples of the troubles include sensitivity degradation and resolution degradation of a mass spectrometer, which are caused by an axis deviation of a component, particularly at least one orifice located between an ion source and a detector, to decrease the number of ions reaching the detector, and a variation in performance caused by exchange of components such as the orifice. For example, the invention has the following configuration in order to solve the troubles. A mass spectrometer includes: an ion source; a detector that detects an ion; an orifice and a mass separator that are disposed between the ion source and the detector; and an axis adjusting mechanism that adjusts axis positions of the orifice and/or the mass separator such that an opening of the orifice and/or an incident port of the mass separator is disposed on a line connecting the ion source and an incident port of the detector.

Abstract: Disclosed is a high resolution and high throughput charged particle radiation device that attenuates the natural vibration of an ion pump in a short time, excited by a reaction force at the time of driving the stage, and prevents occurrence of a loop of force and a loop of current. The charged particle radiation device includes a sample chamber (4) for disposing a sample (3) therein, a charged particle radiation optical lens tube (1) for irradiating the sample (3) with charged particle radiation (10), ion pumps (2a, 2b) for evacuating the charged particle radiation optical lens tube (1), a frame (16) fixedly attached to the sample chamber (4), the frame (16) facing one end of each of the ion pumps (2a, 2b), and vibration absorbers provided between the frame (16) and the one end of each of the ion pumps (2a, 2b), each of the vibration absorbers including a layered structure which includes a viscoelastic sheet (20a, 20b) sandwiched between metal plates (18a, 18b, 21a, 21b).

Abstract: The present invention provides a charged particle beam device in which the change of expansion/contraction of a specimen which is an observing object is restricted thereby eliminating position deviation of the observing object and significantly increasing its throughput. The present invention includes specimen holding means for holding a specimen, temperature regulation means which can regulate the temperature of the specimen, and temperature regulation means control means which can control the temperature regulation means based on various conditions.

Abstract: The present invention provides a charged particle beam device in which the change of expansion/contraction of a specimen which is an observing object is restricted thereby eliminating position deviation of the observing object and significantly increasing its throughput. The present invention includes specimen holding means for holding a specimen, temperature regulation means which can regulate the temperature of the specimen, and temperature regulation means control means which can control the temperature regulation means based on various conditions.

Abstract: Disclosed is a high resolution and high throughput charged particle radiation device that attenuates the natural vibration of an ion pump in a short time, excited by a reaction force at the time of driving the stage, and prevents occurrence of a loop of force and a loop of current. The charged particle radiation device includes a sample chamber (4) for disposing a sample (3) therein, a charged particle radiation optical lens tube (1) for irradiating the sample (3) with charged particle radiation (10), ion pumps (2a, 2b) for evacuating the charged particle radiation optical lens tube (1), a frame (16) fixedly attached to the sample chamber (4), the frame (16) facing one end of each of the ion pumps (2a, 2b), and vibration absorbers provided between the frame (16) and the one end of each of the ion pumps (2a, 2b), each of the vibration absorbers including a layered structure which includes a viscoelastic sheet (20a, 20b) sandwiched between metal plates (18a, 18b, 21a, 21b).

Abstract: An object of the present invention is to provide means for solving troubles. Examples of the troubles include sensitivity degradation and resolution degradation of a mass spectrometer, which are caused by an axis deviation of a component, particularly at least one orifice located between an ion source and a detector, to decrease the number of ions reaching the detector, and a variation in performance caused by exchange of components such as the orifice. For example, the invention has the following configuration in order to solve the troubles. A mass spectrometer includes: an ion source; a detector that detects an ion; an orifice and a mass separator that are disposed between the ion source and the detector; and an axis adjusting mechanism that adjusts axis positions of the orifice and/or the mass separator such that an opening of the orifice and/or an incident port of the mass separator is disposed on a line connecting the ion source and an incident port of the detector.

Abstract: A process for producing a pivaloylacetic acid ester comprises reacting pivaloyl chloride with an acetoacetic acid ester of an alkyl group having 1 to 4 carbon atoms in the presence of at least one nitrogen-containing basic compound (a) selected from among pyridine compounds, N,N-dialkylanilines and imidazole compounds and from 0.01 to 0.5 mole equivalent, based on the pivaloyl chloride, of a magnesium compound (b) to thereby prepare a pivaloylacetoacetic acid ester and then alcholyzing or alkali-hydrolyzing the pivaloylacetoacetic acid ester to thereby give a pivaloylacetic acid ester having a high purity at a low cost.

Abstract: A process for producing a pivaloylacetic acid ester comprises reacting pivaloyl chloride with an acetoacetic acid ester of an alkyl group having 1 to 4 carbon atoms in the presence of at least one nitrogen-containing basic compound (a) selected from among pyridine compounds, N,N-dialkylanilines and imidazole compounds and from 0.01 to 0.5 mole equivalent, based on the pivaloyl chloride, of a magnesium compound (b) to thereby prepare a pivaloylacetoacetic acid ester and then alcholyzing or alkali-hydrolyzing the pivaloylacetoacetic acid ester to thereby give a pivaloylacetic acid ester having a high purity at a low cost.

Abstract: A plasma processing apparatus comprises a plasma generating chamber including a side wall and a roof-plate to cover the upper part of the side wall, in which plasma is generated; a plurality of magnets, one group of the magnets being arranged on the roof-plate in concentric circles, with the polarity of each magnets in each circle being alternated, and the other group of the magnets being arranged around the side wall of the plasma generating chamber in rings, with the polarity of each magnet in each ring being alternated, to form a cusped magnetic field to confine the plasma in the plasma generating chamber; and a holding device which is provided in the plasma generating chamber, to hold a substrate to be processed with the plasma; wherein the magnet means arranged on the roof-plate and the magnet means arranged around the side wall are held in such a way that then can be moved up and down.

Abstract: A plasma processing apparatus comprises a plasma generating chamber including a side wall and a roof-plate to cover the upper part of the side wall, in which plasma is generated; a plurality of magnets, one group of the magnets being arranged on the roof-plate in concentric circles, with the polarity of each magnets in each circle being alternated, and the other group of the magnets being arranged around the side wall of the plasma generating chamber in rings, with the polarity of each magnet in each ring being alternated, to form a cusped magnetic field to confine the plasma in the plasma generating chamber; and a holding device which is provided in the plasma generating chamber, to hold a substrate to be processed with the plasma; wherein the magnet means arranged on the roof-plate and the magnet means arranged around the side wall are held in such a way that they can be moved up and down.

Abstract: Dielectric bodies are arranged in waveguide portions for passing microwave radiation and for holding a plasma generating chamber 25 at a vacuum. The dielectric bodies are arranged to intersect at least an electron cyclotron resonance area of the waveguide portions. A tip end portion of the dielectric bodies at a side of the plasma generating chamber are positioned toward at a side of the plasma generating chamber from an intermediate portion in an axial direction length of a first permanent magnet which is arranged by enclosing an outer periphery of the waveguide portions, and a tip end portion of the dielectric bodies at a side of the plasma generating chamber is substantially consistent with an inner face of the plasma generating chamber.

Abstract: An ion injection device is provided which permits ion injection into a wafer with an optimum ion beam injection angle, and the ion injection device is characterized, by the provision of a wafer holding means for holding a wafer into which ion beam taken out from an ion source is implanted; a relative position varying means for varying the relative position between the wafer holding means and the ion beam within a plane substantially perpendicular to the direction of the ion beam; and an incidence angle varying means for varying an incidence angle of the ion beam on the surface of the wafer held on the wafer holding means.

Abstract: A laser marking apparatus comprises a pulse laser oscillator which emits a linearly polarized laser beam; a transmission type liquid crystal mask which displays a pattern to be marked on an article in one of a positive pattern display mode and a negative pattern display mode by dots arranged in a matrix form and which allows to pass the emitted laser beam but differentiates the polarization plane of the laser beam which has passed through masked portions from that through unmasked portions; a polarized beam splitter disposed downstream the transmission type liquid crystal mask for selectivity passing the laser beam to be irradiated on the article to be marked from the transmission type liquid crystal mask; a TV camera for detecting a discriminator indicating the thermal conductivity of the article to be marked; a recognition unit which determines the thermal conductivity of the article to be marked based upon the detected discriminator; and a control unit which controls the transmission type liquid crystal ma