Abstract: An input/output module is commonly usable to a recorder and a data logger. The input/output module includes an input/output unit and a power unit. The input/output unit is configured to achieve at least one of a function of acquiring a measurement signal from a measurement target and a function of outputting data. The power unit is configured to supply an operation voltage to the input/output unit The power unit includes an insulated power device. The power unit is configured to use a voltage, which has been converted by the insulated power device from a power supply voltage, as an operation voltage when the input/output module is connected with a base of the data logger and the power unit receives a power voltage supply via the base. The power unit is configured to use a power supply voltage as the operation voltage, when the input/output module is connected with the recorder and the power unit receives the power voltage supply from the recorder.

Abstract: An input/output module is commonly usable to a recorder and a data logger. The input/output module includes an input/output unit and a power unit. The input/output unit is configured to achieve at least one of a function of acquiring a measurement signal from a measurement target and a function of outputting data. The power unit is configured to supply an operation voltage to the input/output unit The power unit includes an insulated power device. The power unit is configured to use a voltage, which has been converted by the insulated power device from a power supply voltage, as an operation voltage when the input/output module is connected with a base of the data logger and the power unit receives a power voltage supply via the base. The power unit is configured to use a power supply voltage as the operation voltage, when the input/output module is connected with the recorder and the power unit receives the power voltage supply from the recorder.

Abstract: A workpiece holder for polishing includes a workpiece holder body having multiple perforated holes to hold a workpiece by vacuum suction. A holding surface of the workpiece holder body may be coated with resin. A coefficient of thermal expansion of the resin coating on the holding surface may be 1×10?5/K or less. The resin coating on the holding surface may be epoxy resin filled with silica particles.

Abstract: A semiconductor device includes a RC oscillator configured to produce at an output thereof a first oscillating signal oscillating at a first cycle, a measurement circuit coupled to the output of the RC oscillator to produce at an output thereof a measurement obtained by measuring a length of the first cycle of the first oscillating signal by using as a reference a second oscillating signal having a second cycle, and a correction circuit coupled to the output of the measurement circuit and to the output of the RC oscillator to divide a frequency of the first oscillating signal by a number responsive to the measurement.

Abstract: The present invention relates to a workpiece holder wherein the workpiece holder comprises a workpiece holder body for holding one main surface of a workpiece and mirror-polishing the other main surface thereof, and micro pores are formed on a workpiece holding surface of the workpiece holder.

Abstract: There are provided an apparatus for producing single crystals and a method for producing single crystals, which can absorb and eliminate vibration generated by a crucible rotation driving motor, or prevent transmission of the vibration to a melt, or attenuate the vibration in the production of single crystals by the CZ method. The apparatus for producing single crystals comprises a crucible for accommodating a raw material melt, a mechanism for pulling a crystal from the melt, a mechanism for rotating the crucible, and a transfer mechanism for vertically moving the crucible, wherein, in the rotation mechanism for the crucible, a ball spline is used for power transmission between a crucible-supporting shaft and a crucible rotation driving unit, and the crucible rotation driving unit is fixedly installed on a substructure of the apparatus for producing single crystals. Further, single crystals are produced by using the apparatus.

Abstract: A method for producing a single crystal by pulling the single crystal with a wire according to the Czochralski method, wherein temperature around an end of joint part of the wire and a seed crystal holder is controlled so as not to exceed 1200° C., preferably 800° C., at any time, and material of the wire is one selected from tungsten, stainless steel and molybdenum, and a pulling apparatus therefor. According to the present invention, there can be provided a method in which temperature around an end of joint part of a wire and a seed crystal holder is controlled so as not to exceed a temperature at which material degradation of the wire begins during the period of from seeding to an early stage of the pulling, and a pulling apparatus therefor.

Abstract: There are provided an apparatus for producing single crystals and a method for producing single crystals, which can absorb and eliminate vibration generated by a crucible rotation driving motor, or prevent transmission of the vibration to a melt, or attenuate the vibration in the production of single crystals by the CZ method. The apparatus for producing single crystals comprises a crucible for accommodating a raw material melt, a mechanism for pulling a crystal from the melt, a mechanism for rotating the crucible, and a transfer mechanism for vertically moving the crucible, wherein, in the rotation mechanism for the crucible, a ball spline is used for power transmission between a crucible-supporting shaft and a crucible rotation driving unit, and the crucible rotation driving unit is fixedly installed on a substructure of the apparatus for producing single crystals. Further, single crystals are produced by using the apparatus.

Abstract: A novel device for producing a single crystal by the CZ or MCZ method is provided, which comprising a crucible for containing silicon melt therein, a wire reel and a wire for pulling a single crystal, a motor and a rotation shaft for rotating the crucible, a speed change device being inserted between the motor and the rotation shaft, and, if necessary, a magnetic field generator, by which the magnetic field is applied to the melt. According to the device for producing a single crystal, the rotation accuracy of a crucible can be improved, so that the concentrations of impurities in the pulled single crystal can be highly precisely controlled.

Abstract: A silicon single crystal having low defects, such as flow pattern defects and laser scattering tomography defects, and high dielectric breakdown strength in oxides and a method of producing the same using the Czochralski technique comprising steps of adjusting a first passage time of a growing crystal for a first temperature range of the melting point to 1,200.degree. C. so as to be 190 min. or shorter and adjusting a second passage time thereof for a second temperature range of 1,150.degree. C. to 1,080.degree. C. so as to be 60 min. or longer during crystal growth.