Abstract: A production method of polymer particles produces graft polymer particles by contacting a coagulant with a polymer latex (A) obtained by graft polymerizing a monomer containing methylmethacrylate to a rubber-like polymer. The method comprises a coagulation step in which polymer latex (A) is discharged into a stirring tank from an immersed nozzle provided so that the cross-sectional surface area of the discharge portion is 40 mm2 or more and the direction of discharge is facing in the same direction as the flow in the stirring tank and so that the linear velocity at the nozzle outlet is a velocity of 50-350 mm/s, and contacted with a coagulant to coagulate the graft polymer and obtain a slurry liquid; and a solidification step in which the resulting slurry liquid is held at a temperature of 60-100° C. to solidify the coagulated graft polymer.

Abstract: A synthetic latex is prepared by charging a portion of water and a monomer as raw materials in a reactor in a ratio of monomer/water, at which a maximum ultimate pressure in said reactor that is attained if an initial composition in said reactor before the initiation of the polymerization is polymerized from a polymerization initiation temperature in an insulated state, is within a practical proof pressure of said reactor; initiating the polymerization; adding dropwise the remainder of said water and said monomer during the polymerization, continuously or intermittently, and performing the emulsion polymerization. As a result, the emulsion polymerization can be stably performed while controlling the temperature and pressure in said reactor in a runaway reaction in all processes of the method of preparing the synthetic latex, thus making it possible to improve the productivity.

Abstract: A process for production of diene rubber polymers wherein, during production of a diene rubber polymer by emulsion polymerization, the polymerization is initiated using a portion of the starting material and the polymerization is continued with either continuous or intermittent dropwise addition of the remainder of the starting material during the polymerization, and wherein at least ½ of the total amount of the water and of the monomer in the starting material used is added dropwise during the polymerization, and the temperature of the dropwise added water and monomer is kept to at least 20° C. below the polymerization temperature. The process can produce industrially useful diene rubber polymer latexes at a high productivity rate.

Abstract: A power train arrangement structure for a vehicle, in which an engine and a transaxle for transmitting the drive power outputted from the engine to the axles of front wheels are so arranged in an engine room at the front side of a vehicle body as to have their individual axes in the widthwise direction of the vehicle and in which lower arms for holding the front wheels are supported at two portions in the longitudinal direction of the vehicle. This arrangement structure is characterized in that the foremost end positions of the engine and the transaxle, as taken in the longitudinal direction of the vehicle, are generally aligned with the foremost end positions of the lower arms, as taken in the longitudinal direction of the vehicle, and in that the rearmost end positions of the rigid portions of the engine and the transaxle, as taken in the longitudinal direction of the vehicle, are generally aligned with the rearmost end positions of the lower arms, as taken in the longitudinal direction of the vehicle.

Abstract: A fuel supply controller includes a passage connecting an engine and a fuel tank. An electromagnetic valve is provided in the passage to open and close the passage in stages. The controller controls the electric current flowing through the electromagnetic valve based on information related to the amount of fuel flowing from the fuel tank to the engine.

Abstract: A group III-V compound semiconductor doped with an impurity, having an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed on a crystal of Group III-V compound semiconductor in which the silicon in the SiOx film is diffused into the Group III-V compound semiconductor, thereby forming a doped layer.

Abstract: A method of doping a Group III-V compound semiconductor with an impurity, wherein after an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed in this order on a crystal of Group III-V compound semiconductor, the sample is subjected to at least one heat treatment to cause silicon in the SiOx film to diffuse into the Group III-V compound semiconductor, thereby forming a doped layer. Using this doped layer forming method, field-effect transistors, diodes, resistive layers, two-dimensional electron gas or one-dimensional quantum wires, zero-dimensional quantum boxes, electron wave interference devices, etc. are fabricated.