Abstract: A semiconductor device includes: a combination circuit; and a scan circuit, wherein the scan circuit includes: a first scan chain in which a plurality of first flip-flops are connected in series; and a second scan chain in which a plurality of second flip-flops are connected in series. The first scan chain is configured to capture first output data of at least one of the first flip-flops of the second scan chain, and the second scan chain is configured to capture second output data of at least one of the second flip-flops of the first scan chain.

Abstract: A semiconductor device includes: a combination circuit; and a scan circuit, wherein the scan circuit includes: a first scan chain in which a plurality of first flip-flops are connected in series; and a second scan chain in which a plurality of second flip-flops are connected in series. The first scan chain is configured to capture first output data of at least one of the first flip-flops of the second scan chain, and the second scan chain is configured to capture second output data of at least one of the second flip-flops of the first scan chain.

Abstract: A Bi-CMOS circuit includes a first bipolar, a second bipolar transistor and a CMOS control unit for performing switching controls of the first and second bipolar transistors on the basis of an input signal applied to an input terminal and for controlling an output signal output via the output terminal on the basis of the input signal. A turn-OFF unit temporality couples the base of the first bipolar transistor to a low-potential side power supply line on the basis of a current flowing in said control means when the first bipolar transistor is turned OFF, so that the first bipolar transistor can be rapidly turned OFF.