Abstract: A method for trouble managing in equipment is provided, with which optimal timing of repairing the equipment and occurrence of malfunction probable to occur concurrently with present malfunction or later stage can be inferred with sufficient accuracy, and which can be adopted for large-scale equipment used in a plant.

Abstract: A photovoltaic device having a high conversion efficiency is produced in a stable manner. The conditions for film deposition of a microcrystalline silicon photovoltaic layer (4) in a photovoltaic device are set based on the Raman peak ratio within a Raman spectrum obtained at the substrate (1) side of the microcrystalline silicon layer (4), and the Raman peak ratio within a Raman spectrum obtained at the opposite side to the substrate (1).

Abstract: A method for trouble managing in equipment is provided, with which optimal timing of repairing the equipment and occurrence of malfunction probable to occur concurrently with present malfunction or later stage can be inferred with sufficient accuracy, and which can be adopted for large-scale equipment used in a plant.

Abstract: A photovoltaic device with improved cell properties having a photovoltaic layer comprising microcrystalline silicon-germanium, and a process for producing the device. A buffer layer comprising microcrystalline silicon or microcrystalline silicon-germanium, and having a specific Raman peak ratio is provided between a substrate-side impurity-doped layer and an i-layer comprising microcrystalline silicon-germanium.

Abstract: An electrode and a vacuum processing apparatus are provided that are capable of improving the film deposition rate and the uniformity of the distribution of the deposited film. The electrode includes a plurality of electrodes (17A, 17B) extending from positions arranged at a predetermined interval along a surface of a substrate to be processed (3). Buffer chambers (25) each extend along and between two of the plurality of electrodes (17A, 17B). A plurality of first gas injection holes (27) are arranged in the direction in which the electrodes (17A, 17B) extend and which supply a reactant gas into the buffer chamber (25). A second gas injection hole (23) has a slit form extending in the direction in which the electrodes (17A, 17B) extend, and which supplies the reactant gas from the buffer chamber (25) toward the substrate to be processed (3).

Abstract: A photovoltaic device having a high conversion efficiency is produced in a stable manner. The conditions for film deposition of a microcrystalline silicon photovoltaic layer (4) in a photovoltaic device are set based on the Raman peak ratio within a Raman spectrum obtained at the substrate (1) side of the microcrystalline silicon layer (4), and the Raman peak ratio within a Raman spectrum obtained at the opposite side to the substrate (1).