Abstract: In a moving-object power supply system, a control unit selects, as a power transmission segment, one of segments included in at least one power transmission section. The control unit supplies, through a power supply circuit, power to the power transmission segment to thereby generate a magnetic field through a power transmission coil of the power transmission segment. The control unit determines, based on an ascertained first electrical characteristic of the power transmission segment and an ascertained second electrical characteristic of at least one power non-transmission segment, whether there is a malfunction in each of the power transmission segment and the at least one power non-transmission segment.

Abstract: An electrical storage device electrode binder composition containing a polymer (A) and a liquid medium (B). A repeating unit (A4) derived from an unsaturated carboxylic acid compound is included in the polymer (A) in an amount of 5-40 parts by mass based on 100 parts by mass of the total repeating units in polymer (A). The polymer (A) is in particle form, and the polymer particles have a surface acid content of 1-6 mmol/g.

Abstract: A container containing a cobalt carbonyl complex and a gas that contains carbon monoxide, and a cobalt carbonyl complex composition comprising a cobalt carbonyl complex and a solvent, wherein the concentration of carbon monoxide dissolved in the solvent is 0.001 to 1 wt %. Since the cobalt carbonyl complex contained in the above container or the above composition can retain its sublimation properties for a long time without being converted into a stable complex, when a cobalt film is formed by chemical vapor deposition using the container and the composition, a high-quality film can be formed by a simple process, and the production cost of the cobalt film can be reduced due to high use efficiency of the precursor.

Abstract: A container containing a cobalt carbonyl complex and a gas that contains carbon monoxide, and a cobalt carbonyl complex composition comprising a cobalt carbonyl complex and a solvent, wherein the concentration of carbon monoxide dissolved in the solvent is 0.001 to 1 wt %. Since the cobalt carbonyl complex contained in the above container or the above composition can retain its sublimation properties for a long time without being converted into a stable complex, when a cobalt film is formed by chemical vapor deposition using the container and the composition, a high-quality film can be formed by a simple process, and the production cost of the cobalt film can be reduced due to high use efficiency of the precursor.

Abstract: An electrical storage device electrode binder composition includes a polymer (A) and a liquid medium (B), the polymer (A) including a repeating unit (A4) derived from an unsaturated carboxylic acid in an amount of 5 to 40 parts by mass based on 100 parts by mass of the total repeating units included in the polymer (A), the polymer (A) being polymer particles, and the polymer particles having a surface acid content of more than 1 mmol/g and 6 mmol/g or less.

Abstract: A container containing a cobalt carbonyl complex and a gas that contains carbon monoxide, and a cobalt carbonyl complex composition comprising a cobalt carbonyl complex and a solvent, wherein the concentration of carbon monoxide dissolved in the solvent is 0.001 to 1 wt %. Since the cobalt carbonyl complex contained in the above container or the above composition can retain its sublimation properties for a long time without being converted into a stable complex, when a cobalt film is formed by chemical vapor deposition using the container and the composition, a high-quality film can be formed by a simple process, and the production cost of the cobalt film can be reduced due to high use efficiency of the precursor.

Abstract: A container containing a cobalt carbonyl complex and a gas that contains carbon monoxide, and a cobalt carbonyl complex composition comprising a cobalt carbonyl complex and a solvent, wherein the concentration of carbon monoxide dissolved in the solvent is 0.001 to 1 wt %. Since the cobalt carbonyl complex contained in the above container or the above composition can retain its sublimation properties for a long time without being converted into a stable complex, when a cobalt film is formed by chemical vapor deposition using the container and the composition, a high-quality film can be formed by a simple process, and the production cost of the cobalt film can be reduced due to high use efficiency of the precursor.

Abstract: An insulation film comprising an organosilicon polymer and an organic polymer such as polyarylene, polyarylene ether, polyimide, and fluororesin is disclosed, wherein the organosilicon polymer has a relative dielectric constant of 4 or less and has a dry etching selection ratio of 1/3 or less to silicon oxide, fluorine-doped silicon oxide, organosilicate glass, carbon-doped silicon oxide, methyl silsesquioxane, hydrogen silsesquioxane, a spin-on-glass, or polyorganosiloxane. The insulation film is used as an etching stopper or a hard mask in a dry etching process of interlayer dielectric films for semiconductors and can produce semiconductors having excellent precision with minimal damages.

Abstract: A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound with electron beams to thereby convert the film into a film having a dielectric constant of 3 or lower and having silicon carbide bonds represented by Si—C—Si is disclosed. The film has an even thickness, is excellent in storage stability, dielectric constant, mechanical strength, etc., has low hygroscopicity, and is suitable for use as a dielectric film in semiconductor devices and the like.

Abstract: A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound with electron beams to thereby convert the film into a film having a dielectric constant of 3 or lower and having silicon carbide bonds represented by Si—C—Si is disclosed. The film has an even thickness, is excellent in storage stability, dielectric constant, mechanical strength, etc., has low hygroscopicity, and is suitable for use as a dielectric film in semiconductor devices and the like.

Abstract: A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound with electron beams to thereby convert the film into a film having a dielectric constant of 3 or lower and having silicon carbide bonds represented by Si—C—Si is disclosed. The film has an even thickness, is excellent in storage stability, dielectric constant, mechanical strength, etc., has low hygroscopicity, and is suitable for use as a dielectric film in semiconductor devices and the like.

Abstract: An insulation film comprising an organosilicon polymer and an organic polymer such as polyarylene, polyarylene ether, polyimide, and fluororesin is disclosed, wherein the organosilicon polymer has a relative dielectric constant of 4 or less and has a dry etching selection ratio of 1/3 or less to silicon oxide, fluorine-doped silicon oxide, organosilicate glass, carbon-doped silicon oxide, methyl silsesquioxane, hydrogen silsesquioxane, a spin-on-glass, or polyorganosiloxane. The insulation film is used as an etching stopper or a hard mask in a dry etching process of interlayer dielectric films for semiconductors and can produce semiconductors having excellent precision with minimal damages.

Abstract: A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound at an irradiation dose of less than 500 &mgr;C/cm2 with electron beams to thereby convert the film into a film having a dielectric constant of 3 or lower and having silicon carbide bonds represented by Si—C—Si is disclosed. The film has an even thickness, is excellent in storage stability, dielectric constant, mechanical strength, etc., has low hygroscopicity, and is suitable for use as a dielectric film in semiconductor devices and the like.

Abstract: A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound having a radius of gyration of from 5 to 50 nm with electron beams to thereby convert the film into a film having a dielectric constant of 3 or lower is disclosed. The film has an even thickness, is excellent in storage stability, dielectric constant, mechanical strength, etc., has low hygroscopicity, and is suitable for use as a dielectric film in semiconductor devices and the like.

Abstract: A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound with electron beams to thereby convert the film into a film having a dielectric constant of 3 or lower and having silicon carbide bonds represented by Si—C—Si is disclosed. The film has an even thickness, is excellent in storage stability, dielectric constant, mechanical strength, etc., has low hygroscopicity, and is suitable for use as a dielectric film in semiconductor devices and the like.

Abstract: An automatic transmission which is provided which has a transfer device between the speed change gears and an overdrive, said transfer device having an output gear which engages an input gear of a differential gear coaxially connected to an output shaft of the speed change gears.