Patents by Inventor Kouji Uematsu
Kouji Uematsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8198177Abstract: Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0?x?1, 0?y?1, 0<x+y?1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.Type: GrantFiled: October 25, 2011Date of Patent: June 12, 2012Assignee: Sumitomo Electric Industries, Ltd.Inventors: Seiji Nakahata, Ryu Hirota, Kensaku Motoki, Takuji Okahisa, Kouji Uematsu
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Publication number: 20120040511Abstract: Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1?x?yN (0?x?1, 0?y?1, 0<x+y?1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.Type: ApplicationFiled: October 25, 2011Publication date: February 16, 2012Applicant: Sumitomo Electric Industries, Ltd.Inventors: Seiji NAKAHATA, Ryu Hirota, Kensaku Motoki, Takuji Okahisa, Kouji Uematsu
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Patent number: 8067300Abstract: Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0?x?1, 0?y?1, 0<x+y?1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.Type: GrantFiled: April 28, 2009Date of Patent: November 29, 2011Assignee: Sumitomo Electric Industries, Ltd.Inventors: Seiji Nakahata, Ryu Hirota, Kensaku Motoki, Takuji Okahisa, Kouji Uematsu
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Patent number: 7655960Abstract: Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1?x?yN (0?x?1, 0?y?1, 0<x+y?1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.Type: GrantFiled: August 10, 2006Date of Patent: February 2, 2010Assignee: Sumito Electric Industries, Ltd.Inventors: Seiji Nakahata, Ryu Hirota, Kensaku Motoki, Takuji Okahisa, Kouji Uematsu
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Publication number: 20090215248Abstract: Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0?x?1, 0?y?1, 0<x+y?1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.Type: ApplicationFiled: April 28, 2009Publication date: August 27, 2009Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Seiji NAKAHATA, Ryu HIROTA, Kensaku MOTOKI, Takuji OKAHISA, Kouji UEMATSU
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Publication number: 20060273343Abstract: Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1?x?yN (0?x?1, 0?y?1, 0<x+y?1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.Type: ApplicationFiled: August 10, 2006Publication date: December 7, 2006Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Seiji Nakahata, Ryu Hirota, Kensaku Motoki, Takuji Okahisa, Kouji Uematsu
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Patent number: 7105865Abstract: Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0?x?1, 0?y?1, 0<x+y?1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.Type: GrantFiled: January 25, 2005Date of Patent: September 12, 2006Assignee: Sumitomo Electric Industries, Ltd.Inventors: Seiji Nakahata, Ryu Hirota, Kensaku Motoki, Takuji Okahisa, Kouji Uematsu
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Publication number: 20050161697Abstract: Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0?×?1, 0?y?1, 0<x+y?1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.Type: ApplicationFiled: January 25, 2005Publication date: July 28, 2005Inventors: Seiji Nakahata, Ryu Hirota, Kensaku Motoki, Takuji Okahisa, Kouji Uematsu
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Patent number: 6299263Abstract: An automatic retarder controller for a vehicle, which can prevent overheating, and can more precisely control the vehicle speed to remain constant. For this purpose, in the automatic retarder controller which is mounted on a load-carrying vehicle together with a cooled retarder (31) for exerting a braking force in response to a driving signal, and which automatically controls the driving signal so that the slope descending speed of the vehicle remains nearly constant, a detector for detecting the loading weight of the vehicle is included, and the controller impresses the gain corresponding to the detected loading weight upon the driving signal while the controller controls the vehicle speed to remain constant.Type: GrantFiled: September 24, 1999Date of Patent: October 9, 2001Assignee: Komatsu, LTDInventors: Kouji Uematsu, Nobuki Hasegawa
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Patent number: 6272415Abstract: The invention provides a shift control apparatus of a working vehicle in which an excellent shift operability can be obtained without reference to an incline of a travelling road, a loading amount and a road condition without necessity of learning a time for controlling an engine.Type: GrantFiled: April 14, 2000Date of Patent: August 7, 2001Assignee: Komatsu Ltd.Inventors: Satoshi Tanaka, Kouji Uematsu
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Patent number: D777602Type: GrantFiled: May 20, 2016Date of Patent: January 31, 2017Assignee: KOMATSU LTD.Inventors: Takeo Ootsuka, Kouji Uematsu, Yasuyuki Suzuki, Tomoya Kumagai, Kouhei Miyazaki