Patents by Inventor Koujiro Komagaki
Koujiro Komagaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10096331Abstract: A magnetic read head is provided, comprising a bottom magnetic shield, a first free magnetic layer, a second free magnetic layer, and a top magnetic shield, arranged from bottom to top in this order in a stacking direction from a leading side to a trailing side of the read head. A non-soft bias layer is positioned below the top magnetic shield and on a back side of the first and the second free magnetic layers. The top magnetic shield has a unidirectional anisotropy, the magnetic moments of the top and the bottom magnetic shields are canted relative to a plane of the first and the second free magnetic layers, and the top and the bottom magnetic shields are decoupled from the non-soft bias layer and not magnetically coupled to a soft bias layer.Type: GrantFiled: September 19, 2017Date of Patent: October 9, 2018Assignee: Western Digital Technologies, Inc.Inventors: Norihiro Okawa, Koujiro Komagaki, Takahiro Ibusuki
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Publication number: 20180005652Abstract: A magnetic read head is provided, comprising a bottom magnetic shield, a first free magnetic layer, a second free magnetic layer, and a top magnetic shield, arranged from bottom to top in this order in a stacking direction from a leading side to a trailing side of the read head. A non-soft bias layer is positioned below the top magnetic shield and on a back side of the first and the second free magnetic layers. The top magnetic shield has a unidirectional anisotropy, the magnetic moments of the top and the bottom magnetic shields are canted relative to a plane of the first and the second free magnetic layers, and the top and the bottom magnetic shields are decoupled from the non-soft bias layer and not magnetically coupled to a soft bias layer.Type: ApplicationFiled: September 19, 2017Publication date: January 4, 2018Inventors: Norihiro Okawa, Koujiro Komagaki, Takahiro Ibusuki
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Patent number: 9799356Abstract: A magnetic read head is provided, comprising a bottom magnetic shield, a first free magnetic layer, a second free magnetic layer, and a top magnetic shield, arranged from bottom to top in this order in a stacking direction from a leading side to a trailing side of the read head. A soft bias layer is positioned below the top magnetic shield and on a back side of the first free magnetic layer and second free magnetic layer. The soft bias layer is directly coupled to the top magnetic shield, and the top magnetic shield has a unidirectional anisotropy, thereby reducing the incidence of soft bias magnetization reversal and avoiding hysteresis in the transfer curve.Type: GrantFiled: January 4, 2016Date of Patent: October 24, 2017Assignee: Western Digital Technologies, Inc.Inventors: Norihiro Okawa, Koujiro Komagaki, Takahiro Ibusuki
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Publication number: 20170194023Abstract: A magnetic read head is provided, comprising a bottom magnetic shield, a first free magnetic layer, a second free magnetic layer, and a top magnetic shield, arranged from bottom to top in this order in a stacking direction from a leading side to a trailing side of the read head. A soft bias layer is positioned below the top magnetic shield and on a back side of the first free magnetic layer and second free magnetic layer. The soft bias layer is directly coupled to the top magnetic shield, and the top magnetic shield has a unidirectional anisotropy, thereby reducing the incidence of soft bias magnetization reversal and avoiding hysteresis in the transfer curve.Type: ApplicationFiled: January 4, 2016Publication date: July 6, 2017Inventors: Norihiro Okawa, Koujiro Komagaki, Takahiro Ibusuki
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Publication number: 20160351212Abstract: A magnetic sensor having improved magnetic free layer stability and signal resolution. The magnetic sensor includes a weak magnetic spacer located between a magnetic free layer and a trailing magnetic shield. The weak magnetic spacer provides a desired weak magnetic coupling between the magnetic free layer and the trailing shield. This weak magnetic coupling reduces signal side lobe, thereby improving signal resolution. The weak magnetic spacer can be an alloy that includes magnetic and nonmagnetic elements. The magnetic elements can be one or more of Co, Fe and Ni. The nonmagnetic elements can be one or more of Hf, Ta, Nb and Zr.Type: ApplicationFiled: May 30, 2015Publication date: December 1, 2016Inventors: Norihiro Okawa, Koujiro Komagaki
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Patent number: 9341685Abstract: In one embodiment, a magnetic read head includes an antiferromagnetic (AFM) layer including a MnIr alloy having an L12 ordered phase, a pinned layer positioned above the AFM layer, and a seed layer positioned directly below the AFM layer, wherein the seed layer includes a laminated structure with an upper layer including Ru being positioned above one or more additional layers. In another embodiment, a magnetic read head includes an AFM layer including a MnIr alloy having an L12 ordered phase, a pinned layer positioned above the AFM layer, and a seed layer positioned directly below the AFM layer, the seed layer including a laminated structure of Ta/Y/Ru, wherein Y is a layer having an element or an alloy. Other magnetic heads having a reduced amount of random telegraph noise (RTN) and methods of formation thereof are disclosed according to more embodiments.Type: GrantFiled: May 13, 2013Date of Patent: May 17, 2016Assignee: HGST Netherlands B.V.Inventors: Kouichi Nishioka, Koujiro Komagaki
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Patent number: 9245549Abstract: In one embodiment, magnetic read head includes a seed layer including an amorphous alloy film and Ru film positioned thereon, and an antiferromagnetic (AFM) layer positioned above the seed layer, the AFM layer including an alloy of MnIr having an L12 ordered phase, the amorphous alloy including a Co—X alloy having more Co than any other element, with X including at least one of: Zr, Nb, Ta, Hf, W, Si, and Al. In another embodiment, a method for forming a magnetic read head includes forming a seed layer above a substrate, heating at least the substrate to a first temperature in a range from about 150° C. to about 300° C., cooling at least the substrate to a second temperature of less than about 100° C., and forming an AFM layer above the seed layer between the heating and the cooling, the AFM layer comprising a MnIr alloy.Type: GrantFiled: May 13, 2013Date of Patent: January 26, 2016Assignee: HGST Netherlands B.V.Inventors: Kouichi Nishioka, Koujiro Komagaki
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Patent number: 9183858Abstract: The present disclosure generally relates to a read head sensor in a magnetic recording head. The read head sensor comprises a dual capping layer in a sensor stack that may reduce magnetic coupling so as to enhance magnetic bias field, e.g., domain control, in the read head sensor. Furthermore, an upper shield with multiple film stack having different film properties may also be utilized to enhance bias field generated to the read head sensor. Additionally, a coil structure may be positioned adjacent to a side shield to enhance bias field generation in the read head sensor.Type: GrantFiled: January 28, 2014Date of Patent: November 10, 2015Assignee: HGST Netherlands B.V.Inventors: Norihiro Okawa, Koujiro Komagaki
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Publication number: 20150213816Abstract: The present disclosure generally relates to a read head sensor in a magnetic recording head. The read head sensor comprises a dual capping layer in a sensor stack that may reduce magnetic coupling so as to enhance magnetic bias field, e.g., domain control, in the read head sensor. Furthermore, an upper shield with multiple film stack having different film properties may also be utilized to enhance bias field generated to the read head sensor. Additionally, a coil structure may be positioned adjacent to a side shield to enhance bias field generation in the read head sensor.Type: ApplicationFiled: January 28, 2014Publication date: July 30, 2015Applicant: HGST NETHERLANDS B.V.Inventors: Norihiro OKAWA, Koujiro KOMAGAKI
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Publication number: 20140377588Abstract: The embodiments of the present invention generally relate to a magnetic head having a silicon seed layer disposed between a lower shield and a metallic underlayer to enhance the unidirectional anisotropy in an antiferromagnetic layer disposed over the metallic underlayer.Type: ApplicationFiled: June 21, 2013Publication date: December 25, 2014Applicant: HGST NETHERLANDS B.V.Inventors: Koujiro KOMAGAKI, Kouichi NISHIOKA
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Patent number: 8902549Abstract: The embodiments of the present invention generally relate to a magnetic head having a silicon seed layer disposed between a lower shield and a metallic underlayer to enhance the unidirectional anisotropy in an antiferromagnetic layer disposed over the metallic underlayer.Type: GrantFiled: June 21, 2013Date of Patent: December 2, 2014Assignee: HGST Netherlands B.V.Inventors: Koujiro Komagaki, Kouichi Nishioka
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Publication number: 20140334031Abstract: In one embodiment, magnetic read head includes a seed layer including an amorphous alloy film and Ru film positioned thereon, and an antiferromagnetic (AFM) layer positioned above the seed layer, the AFM layer including an alloy of MnIr having an L12 ordered phase, the amorphous alloy including a Co—X alloy having more Co than any other element, with X including at least one of: Zr, Nb, Ta, Hf, W, Si, and Al. In another embodiment, a method for forming a magnetic read head includes forming a seed layer above a substrate, heating at least the substrate to a first temperature in a range from about 150° C. to about 300° C., cooling at least the substrate to a second temperature of less than about 100° C., and forming an AFM layer above the seed layer between the heating and the cooling, the AFM layer comprising a MnIr alloy.Type: ApplicationFiled: May 13, 2013Publication date: November 13, 2014Applicant: HGST Netherlands B.V.Inventors: Kouichi Nishioka, Koujiro Komagaki
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Publication number: 20140334032Abstract: In one embodiment, a magnetic read head includes an antiferromagnetic (AFM) layer including a MnIr alloy having an L12 ordered phase, a pinned layer positioned above the AFM layer, and a seed layer positioned directly below the AFM layer, wherein the seed layer includes a laminated structure with an upper layer including Ru being positioned above one or more additional layers. In another embodiment, a magnetic read head includes an AFM layer including a MnIr alloy having an L12 ordered phase, a pinned layer positioned above the AFM layer, and a seed layer positioned directly below the AFM layer, the seed layer including a laminated structure of Ta/Y/Ru, wherein Y is a layer having an element or an alloy. Other magnetic heads having a reduced amount of random telegraph noise (RTN) and methods of formation thereof are disclosed according to more embodiments.Type: ApplicationFiled: May 13, 2013Publication date: November 13, 2014Applicant: HGST Netherlands B.V.Inventors: Kouichi Nishioka, Koujiro Komagaki
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Patent number: 8191235Abstract: The method of the present invention provides a magnetoresistance effect element, which is capable of having a high MR ratio, corresponding to high density recording and being suitably applied to a magnetoresistance device even though a barrier layer is thinned to reduce resistance of the magnetoresistance effect element. The method of producing the magnetoresistance effect element, which includes the barrier layer composed of an oxidized metal, a first magnetic layer contacting one of surfaces of the barrier layer and a second magnetic layer contacting the other surface thereof, comprises the steps of: laminating the barrier layer on the first magnetic layer with using a target composed of the oxidized metal; and laminating the second magnetic layer on the barrier layer. The barrier layer is annealed before laminating the second magnetic layer thereon.Type: GrantFiled: December 19, 2008Date of Patent: June 5, 2012Assignees: Fujitsu Limited, Tohoku UniversityInventors: Migaku Takahashi, Masakiyo Tsunoda, Koujiro Komagaki, Yuji Uehara, Kazuyuki Sunaga
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Publication number: 20090168270Abstract: In comparison with conventional exchange-coupled elements, the exchange-coupled element of the present invention has greater unidirectional magnetization anisotropy. The exchange-coupled element comprises: an ordered antiferromagnetic layer; and a pinned magnetic layer being exchange-coupled with the ordered antiferromagnetic layer, the pinned magnetic layer having unidirectional magnetization anisotropy. The pinned magnetic layer is constituted by a first pinned magnetic layer having a composition, which can have a face-centered cubic lattice structure, and a second pinned magnetic layer having a composition, which can have a body-centered cubic lattice structure.Type: ApplicationFiled: December 23, 2008Publication date: July 2, 2009Applicants: FUJITSU LIMITED, TOHOKU UNIVERSITYInventors: Migaku Takahashi, Masakiyo Tsunoda, Koujiro Komagaki, Yuji Uehara
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Publication number: 20090169915Abstract: The method of the present invention provides a magnetoresistance effect element, which is capable of having a high MR ratio, corresponding to high density recording and being suitably applied to a magnetoresistance device even though a barrier layer is thinned to reduce resistance of the magnetoresistance effect element. The method of producing the magnetoresistance effect element, which includes the barrier layer composed of an oxidized metal, a first magnetic layer contacting one of surfaces of the barrier layer and a second magnetic layer contacting the other surface thereof, comprises the steps of: laminating the barrier layer on the first magnetic layer with using a target composed of the oxidized metal; and laminating the second magnetic layer on the barrier layer. The barrier layer is annealed before laminating the second magnetic layer thereon.Type: ApplicationFiled: December 19, 2008Publication date: July 2, 2009Applicants: FUJITSU LIMITED, TOHOKU UNIVERSITYInventors: Migaku Takahashi, Masakiyo Tsunoda, Koujiro Komagaki, Yuji Uehara, Kazuyuki Sunaga
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Publication number: 20090080123Abstract: The high quality magnetoresistance effect element is capable of reducing resistance in the perpendicular-plane direction and preventing performance deterioration of a barrier layer. The magnetoresistance effect element comprises: a free layer; a pinned magnetic layer; and a barrier layer being provided between the free layer and the pinned magnetic layer, and the barrier layer is composed of a semiconductor.Type: ApplicationFiled: July 28, 2008Publication date: March 26, 2009Applicants: FUJITSU LIMITEDInventors: Yuji Uehara, Koujiro Komagaki, Masashi Kawasaki
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Publication number: 20080068761Abstract: A method for manufacturing a magnetic head device that includes a soft magnetic layer includes the steps of forming a plating base layer in the soft magnetic layer through sputtering, and applying, during the forming step, a magnetic field in a direction parallel to an orientation fringe of a wafer in which the magnetic head device is formed.Type: ApplicationFiled: April 26, 2007Publication date: March 20, 2008Applicant: Fujitsu LimitedInventors: Hiroshi Horiguchi, Koujiro Komagaki, Koji Hirano
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Publication number: 20050270702Abstract: The magnetoresistance effect element can be manufactured by a conventional process and is capable of restricting influences of noises or leaked magnetic signals so that magnetic recording density can be highly improved. The magnetoresistance effect element comprises: a magnetoresistance film including a free layer; and shielding sections being respectively provided on the both sides of the free layer in a direction of track width, the shielding sections being soft magnetic films.Type: ApplicationFiled: October 26, 2004Publication date: December 8, 2005Inventors: Koujiro Komagaki, Kenji Noma