Abstract: [Object] To provide a plasma processing method and a plasma processing apparatus having high coverage property and excellent in-plane uniformity. [Solving Means] When sputtered particles that are beat out from a target by plasma are deposited on a surface of a substrate, those sputtered particles are decomposed by the plasma to thus generate active species, and then deposited on the surface of the substrate. Accordingly, a deposition mode similar to plasma CVD is obtained, and sputtering deposition with high coverage property and excellent in-plane uniformity is enabled. Particularly, since a high-frequency electric field and a ring-shaped magnetic neutral line are used for a plasma source, it is possible to efficiently generate plasma that has extremely high density in a region in which a magnetic field is zero. That plasma realizes plasma processing with high in-plane uniformity by arbitrarily adjusting a formation position and a size of the magnetic neutral line.

Abstract: [Object] To provide a plasma processing method capable of maintaining a uniform in-plane distribution from the start to the end of etching by optimizing etching conditions. [Solving Means] In a plasma processing method according to the present invention, the process of etching a substrate (W) having a mask pattern formed on a surface thereof by using plasma formed in a vacuum vessel (21) and the process of forming a protective film on a side wall portion of an etching pattern formed on the substrate (W) by sputtering a target material (30) disposed in the vacuum vessel (21) by using the plasma are alternately repeated. In the plasma processing method, a uniform in-plane distribution is maintained over a time period from the start to the end of plasma processing by changing a radius of a magnetic neutral line (25) in accordance with progress of the plasma processing including the etching processing and the processing of forming a protective film for the substrate (W).

Abstract: A chalcogenide film of the invention is formed by a sputtering within a contact hole formed in an insulating layer on a substrate, and is made of a chalcogen compound including a melting-point lowering material that lowers a melting point.

Abstract: A method for dry etching an interlayer insulating film with an ArF resist or KrF resist thereon comprises dry etching fine features into the interlayer insulating film with an etching gas in such a manner as to form a polymer film on the ArF or KrF resist from the etching gas, wherein the etching gas is introduced under a pressure of 0.5 Pa or less, and wherein a Fourier transform infrared spectrum of the polymer film includes a C—F bond peak at about 1200 cm?1, a C—N bond peak at about 1600 cm?1, and a C—H bond peak at about 3300 cm?1.

Abstract: An etching method which uses an apparatus having a chamber in which an etching gas is excited by plasma; a table arranged in the chamber which heats a substrate mounted thereon; and a frame member which includes etching-endurable material which is arranged around the table, and which has an upper surface arranged at a position lower than an upper surface of the table, the etching method including: arranging the substrate on the upper surface of the table such that a peripheral part of the substrate projects above the table; and arranging the substrate such that a ratio of a height from the upper surface of the frame member to a bottom surface of the substrate and a projecting length from a side surface of the table to an outer circumference of the substrate is 1.

Abstract: An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode.

Abstract: An ashing device that prevents the ashing rate from changing over time. The ashing device ashes organic material on a substrate including an exposed metal in a processing chamber. The ashing device includes a path, which is formed in the processing chamber and through which active species supplied to the processing chamber pass. The path is defined by a surface on which the metal scattered from the substrate by the active species is collectible, with the surface being formed so as to expose a metal that is of the same kind.

Abstract: A plasma processing apparatus of the present invention performs on a substrate to be processed, plasma processing with a noble metal material and a ferroelectric material and is provided with a constituent member that is exposed to plasma while being heated. The constituent member is formed with an aluminum alloy of at least 99% aluminum purity.

Abstract: A dry etching apparatus having excellent in-plane uniformity and a high etching rate and a dry etching method are provided. A dry etching apparatus includes a vacuum chamber having an upper plasma generation chamber and a lower substrate processing chamber; a magnetic field coil disposed outside a sidewall of the plasma generation chamber; an antenna coil disposed between the magnetic field coil and the outside of the sidewall and connected to a high-frequency power source; and means for introducing an etching gas disposed on top of the plasma generation chamber, wherein the sidewall is formed of a material having a relative dielectric constant of 4 or more.

Abstract: A dry etching method by which a substrate can be dry-etched on both sides without a crack is provided. The dry etching method includes: introducing an etching gas having a fluorocarbon gas and a rare gas into a vacuum chamber; generating plasma in the vacuum chamber having a predetermined pressure; and etching a substrate to be processed adhered on an adhesive surface of a heat-conductive sheet disposed on a substrate table.

Abstract: An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode.

Abstract: Disclosed is an ashing apparatus wherein decrease in processing efficiency is suppressed. Specifically, a shower plate is arranged to face a substrate stage on which a substrate is placed, and diffuses oxygen radicals supplied into a chamber. A metal blocking plate is arranged between the shower plate and the substrate stage and has a through hole through which oxygen radicals pass. In addition, the metal blocking plate has a first layer, which is made of a metal same as the one exposed in the substrate, on the surface facing the substrate.

Abstract: This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar electrode and a high-frequency antenna that are provided outside the dielectric member; and a high-frequency power source that supplies high-frequency power to both the high-frequency antenna and the planar electrode, to thereby introduce high-frequency power into the vacuum container via the dielectric member and produce an inductively-coupled plasma, the method comprising the steps of: introducing a gas including fluorine into the vacuum container and also introducing high-frequency power into the vacuum container from the high-frequency power source, to thereby produce an inductively-coupled plasma in the gas including fluorine; and by use of the inductively-coupled plasma, removing a product including at least one of a precious metal and a ferroelectric that is adhered to the dielectric member.

Abstract: The object of the present invention is to provide a dry etching method by which generation of a notch in an insulating layer can be suppressed and highly-accurate microfabrication can be realized. In a dry etching method according to the present invention, a substrate in which a semiconductor layer is formed on an insulating layer formed of a silicon oxide is prepared, a through-hole is formed in the semiconductor layer, and a resin film is formed on side walls of the through-hole and a recessed portion while forming the recessed portion in the insulating layer by etching an area in which the insulating layer is exposed via the through-hole. By forming the resin film on the side wall of the recessed portion, the side wall of the recessed portion is protected from collision of ions in plasma and generation of a notch in the recessed-portion side wall is suppressed.

Abstract: A multilayer thin film formation method and a multilayer thin film formation apparatus that improve dielectric characteristics and piezoelectric characteristics of a thin film formed from a lead-based perovskite complex oxide. The multilayer thin film formation method includes formation of a lower electrode layer (32b) containing a noble metal above a substrate (S) by sputtering a lower electrode layer target (TG2), and superposing a lead-based complex oxide layer (33) on the lower electrode layer (32b) by sputtering an oxide layer target (TG3) containing lead. The lower electrode layer (32b) has a thickness restricted to 10 to 30 nm, and the lead-based complex oxide layer (33) has a thickness restricted to 0.2 and 5.0 ?m.

Abstract: A method for forming a chalcogenide film within a contact hole formed in an insulating layer on a substrate, includes: preparing a target having a composition the same as that of the chalcogenide film; setting a ratio L/T of a distance L with respect to a diameter T of the target to a value not less than 0.5 and not more than 1.5, where the diameter of the target is T (m) and the distance between the target and the substrate is L (m); and forming a chalcogenide film within the contact hole by a sputtering process in which a bias electric power is applied to the substrate and a sputtering electric power is applied to the target.

Abstract: A film forming method in which crystalline film having PZT (001) or PZT (100) as a principal component thereof is laminated on a foundation film having a (111) oriented noble metal as a principal component thereof, the method including the steps of: performing reduction treatment on a surface of the foundation film; and forming the crystalline film by an MOCVD method on the surface of the foundation film.

Abstract: A multilayer film formation method enables the formation of a multilayer including a complex oxide layer and having the desired shape of an element without performing an etching process. The method positions a first mask (30A) above a substrate (S), forms an adhesion layer (36) and a lower electrode layer (37) on the substrate with the first mask by sputtering an adhesion layer target (T1) and a lower electrode layer target (T2), positions a second mask (30B) formed from a ceramic material above the lower electrode layer, superimposes a complex oxide layer (38) on the lower electrode layer with the second mask by sputtering an oxide layer target (T3), positions a third mask (30C) above the complex oxide layer, and superimposes an upper electrode layer (39) on the complex oxide layer with the third mask by sputtering an upper electrode layer target (T4).

Abstract: The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level.

Abstract: The object of the present invention is to provide a dry etching method which permits the reduction of the amount of any etching product formed during the etching process to thus improve the in-plane etching uniformity with respect to an object to be etched. The dry etching method comprises the steps of providing an electrode equipped with an electrode-presser member which at least comprises a surface layer composed of an yttrium-containing oxide and which is disposed on the peripheral region of the upper surface of the electrode, placing a substrate on the electrode and then subjecting the substrate to dry etching, while preventing the formation of any etching product at the peripheral region of the electrode.