Abstract: A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

Abstract: A display device includes a display panel including a plurality of pixels, a data driver configured to provide data voltages to the pixels, and a gate driver configured to provide gate signals to the pixels. The display device also includes a controller configured to control the data driver and the gate driver, and to control the magnitude of a sensing initialization voltage applied to the pixels based on a frame rate value when operating in a variable frame mode.

Abstract: A display device includes a display panel including a plurality of pixels, a data driver configured to provide data voltages to the pixels, and a gate driver configured to provide gate signals to the pixels. The display device also includes a controller configured to control the data driver and the gate driver, and to control the magnitude of a sensing initialization voltage applied to the pixels based on a frame rate value when operating in a variable frame mode.