Patents by Inventor Koushu Satoh

Koushu Satoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of producing an anodic bonded semiconductor sensor element
    Patent number: 6077721
    Abstract: A semiconductor sensor mount is formed as follows: through holes are formed that penetrate a glass plate; and then the glass plate having the through holes is dipped into hydrofluoric acid etchant to smooth the inner peripheral surfaces of the respective through holes. By etching the inner peripheral surfaces of the respective through holes after the through hole formation, minute roughness and cracks formed on the inner peripheral surfaces are removed, and thereby the areas for adsorbing gas are substantially reduced. That is, vacuums within the through holes can be maintained at a high degree during the anodic bonding, whereby undesirable electric discharge phenomena are prevented even if a relatively high voltage is applied during the anodic bonding. Accordingly, the yield of products can be improved while improving productivity.
    Type: Grant
    Filed: October 8, 1997
    Date of Patent: June 20, 2000
    Assignees: Nippondenso Co., Ltd., Iwaki Glass Co., Ltd.
    Inventors: Tsuyoshi Fukada, Yasutoshi Suzuki, Koushu Satoh, Hiroaki Kawashima
  • Semiconductor element mount and producing method therefor
    Patent number: 5736061
    Abstract: A semiconductor sensor mount is formed as follows: through holes are formed that penetrate a glass plate; and then the glass plate having the through holes is dipped into hydrofluoric acid etchant to smooth the inner peripheral surfaces of the respective through holes. By etching the inner peripheral surfaces of the respective through holes after the through hole formation, minute roughness and cracks formed on the inner peripheral surfaces are removed, and thereby the areas for adsorbing gas are substantially reduced. That is, vacuums within the through holes can be maintained at a high degree during the anodic bonding, whereby undesirable electric discharge phenomena are prevented even if a relatively high voltage is applied during the anodic bonding. Accordingly, the yield of products can be improved while improving productivity.
    Type: Grant
    Filed: June 27, 1996
    Date of Patent: April 7, 1998
    Assignees: Nippondenso Co. Ltd., Iwaki Glass Co., Ltd.
    Inventors: Tsuyoshi Fukada, Yasutoshi Suzuki, Koushu Satoh, Hiroaki Kawashima