Abstract: A thin film strongly orienting specific crystal axes is deposited on a polycrystalline or amorphous base material in accordance with laser deposition in a simpler device through a simpler process. A target is irradiated with a laser beam, for forming a thin film in accordance with laser ablation of depositing a substance scattered from the target on a base material. In order to form the thin film, prepared are conditions capable of forming a film orienting a specific crystal axis substantially perpendicularly to the base material in substantially parallel arrangement of the target and the base material. Under the conditions, a film is deposited on the base material which is inclined at a prescribed angle .theta. with respect to the target. It is possible to deposit a film strongly orienting a specific crystal axis in a plane substantially parallel to the base material surface by inclining the base material under the specific film forming conditions.

Abstract: Disclosed herein is an apparatus for manufacturing an oxide superconducting film employing laser ablation method. This apparatus has a thin film forming chamber having a laser-transparent laser entrance window, a target being provided in the thin film forming chamber and containing components of an oxide superconductor, a laser beam source for irradiating the target with a laser beam from the exterior of the thin film forming chamber through the laser entrance window, and apparatus for controlling power of the laser beam which is applied to the target for preventing the power of the laser beam, being applied to the target, from reduction by contamination of the entrance window caused by scattered particles. According to the present invention, it is possible to form an oxide superconducting film having high and uniform characteristics even if a long time is required for film formation, thereby attaining a remarkable effect in improvement of superconductivity of a large area oxide superconducting film.

Abstract: An apparatus for manufacturing an oxide superconducting film employing laser ablation method having a thin film forming chamber having a laser-transparent laser entrance window, a target being provided in the thin film forming chamber and containing components of an oxide superconductor, a laser beam source for irradiating the target with a laser beam from the exterior of the thin film forming chamber through the laser entrance window, and a controller for controlling power of the laser beam which is applied to the target for preventing the power of the laser beam, being applied to the target, from reduction by contamination of the entrance window caused by scattered particles. According to the present invention, it is possible to form an oxide superconducting film having high and uniform characteristics even if a long time is required for film formation, thereby attaining a remarkable effect in improvement of superconductivity of a large area oxide superconducting film.

Abstract: Disclosed herein is a method of forming a single-crystalline thin film having excellent crystallinity on a base material without depending on the material for and crystallinity of the base material. In this method, a base material is provided thereon with a mask which can prevent chemical species contained in a vapor phase from adhering to the base material. The base material is continuously moved along arrow A, to deliver a portion covered with the mask into the vapor phase for crystal growth. Thus, a thin film is successively deposited on the portion of the base material, which is delivered from under the mask, from the vapor phase. A crystal growth end is formed on a boundary region between a portion of the base material which is covered with the mask and that which is exposed to the vapor phase, so that a crystal having the same orientation as the growth end is grown on a portion of the base material newly exposed by the movement.