Patents by Inventor Kousuke Ise

Kousuke Ise has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride semiconductor laser device
    Patent number: 7813397
    Abstract: A nitride semiconductor laser device includes, on a first principle face of the (0001) of a nitride semiconductor substrate, a nitride semiconductor layer having a first conductivity type, an active layer, and a nitride semiconductor layer having a second conductivity type that is different from the first conductivity type, and being formed a stripe ridge on the surface thereof. The (000-1) face and an inclined face other than the (000-1) face are exposed on a second principal face of the nitride semiconductor substrate. The inclined face other than the (000-1) face represents no less than 0.5% over the surface area of the second principal face.
    Type: Grant
    Filed: April 9, 2008
    Date of Patent: October 12, 2010
    Assignee: Nichia Corporation
    Inventors: Yuji Matsuyama, Shinji Suzuki, Kousuke Ise, Atsuo Michiue, Akinori Yoneda
  • NITRIDE SEMICONDUCTOR LASER DEVICE AND NITRIDE SEMICONDUCTOR DEVICE
    Publication number: 20080192788
    Abstract: A nitride semiconductor laser device includes, on a first principle face of the (0001) of a nitride semiconductor substrate, a nitride semiconductor layer having a first conductivity type, an active layer, and a nitride semiconductor layer having a second conductivity type that is different from the first conductivity type, and being formed a stripe ridge on the surface thereof. The (000-1) face and an inclined face other than the (000-1) face are exposed on a second principal face of the nitride semiconductor substrate. The inclined face other than the (000-1) face represents no less than 0.5% over the surface area of the second principal face.
    Type: Application
    Filed: April 9, 2008
    Publication date: August 14, 2008
    Applicant: NICHIA CORPORATION
    Inventors: Yuji MATSUYAMA, Shinji SUZUKI, Kousuke ISE, Atsuo MICHIUE, Akinori YONEDA
  • Nitride semiconductor laser device and nitride semiconductor device
    Patent number: 7408199
    Abstract: A nitride semiconductor laser device comprises, on a principle face of a nitride semiconductor substrate: a nitride semiconductor layer having a first conductivity type; an active layer comprising indium, and a nitride semiconductor layer having a second conductivity type that is different from said first conductivity type, and on the surface of which is formed a stripe ridge; said principal face of said nitride semiconductor substrate having an off angle a (?a) with respect to a reference crystal plane, in at least a direction substantially parallel to said stripe ridge.
    Type: Grant
    Filed: March 31, 2005
    Date of Patent: August 5, 2008
    Assignee: Nichia Corporation
    Inventors: Yuji Matsuyama, Shinji Suzuki, Kousuke Ise, Atsuo Michiue, Akinori Yoneda
  • Nitride semiconductor laser device and nitride semiconductor device
    Publication number: 20050224783
    Abstract: A nitride semiconductor laser device comprises, on a principle face of a nitride semiconductor substrate: a nitride semiconductor layer having a first conductivity type; an active layer comprising indium, and a nitride semiconductor layer having a second conductivity type that is different from said first conductivity type, and on the surface of which is formed a stripe ridge; said principal face of said nitride semiconductor substrate having an off angle a (?a) with respect to a reference crystal plane, in at least a direction substantially parallel to said stripe ridge.
    Type: Application
    Filed: March 31, 2005
    Publication date: October 13, 2005
    Applicant: NICHIA CORPORATION
    Inventors: Yuji Matsuyama, Shinji Suzuki, Kousuke Ise, Atsuo Michiue, Akinori Yoneda