Patents by Inventor Kousuke Shibata

Kousuke Shibata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160119192
    Abstract: A management system displays a list of elements of some element types from among a plurality of element types, and receives a selection of the two or more elements from the list. The management system displays a topology which is configured of the two or more selected elements and an element (related element) related to the two or more selected elements and in which the two or more selected elements and the related element are segmented by element types.
    Type: Application
    Filed: October 10, 2014
    Publication date: April 28, 2016
    Inventors: Shiro TANOUE, Kousuke SHIBATA, Yuusuke ASAI, Tsutomu FUJII
  • Patent number: 9219348
    Abstract: The present edge-emitting semiconductor layer element includes two-dimensional photonic crystals 4 formed in a semiconductor layer, and when one direction of a contact region of an electrode 8 is provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystals 4 are, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).
    Type: Grant
    Filed: February 29, 2012
    Date of Patent: December 22, 2015
    Assignees: Kyoto University, HAMAMATSU PHOTONICS K.K.
    Inventors: Akiyoshi Watanabe, Kazuyoshi Hirose, Kousuke Shibata, Takahiro Sugiyama, Yoshitaka Kurosaka, Susumu Noda
  • Patent number: 8693516
    Abstract: A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layer 6 obtained by periodically forming a plurality of holes H in a basic layer 6A comprised of a first compound semiconductor of the zinc blend structure and growing embedded regions 6B comprised of a second compound semiconductor of the zinc blend structure, in the holes H, and an active layer 4 to supply light to the photonic crystal layer 6, in which a principal surface of the basic layer 6A is a (001) plane and in which side faces of each hole H have at least three different {100} facets.
    Type: Grant
    Filed: June 21, 2011
    Date of Patent: April 8, 2014
    Assignees: Hamamatsu Photonics K.K., Kyoto University
    Inventors: Kazuyoshi Hirose, Shinichi Furuta, Akiyoshi Watanabe, Takahiro Sugiyama, Kousuke Shibata, Yoshitaka Kurosaka, Susumu Noda
  • Publication number: 20140036947
    Abstract: The present edge-emitting semiconductor layer element includes two-dimensional photonic crystals 4 formed in a semiconductor layer, and when one direction of a contact region of an electrode 8 is provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystals 4 are, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).
    Type: Application
    Filed: February 29, 2012
    Publication date: February 6, 2014
    Applicants: HAMAMATSU PHOTONICS K.K., KYOTO UNIVERSITY
    Inventors: Akiyoshi Watanabe, Kazuyoshi Hirose, Kousuke Shibata, Takahiro Sugiyama, Yoshitaka Kurosaka, Susumu Noda
  • Publication number: 20130121358
    Abstract: A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layer 6 obtained by periodically forming a plurality of holes H in a basic layer 6A comprised of a first compound semiconductor of the zinc blende structure and growing embedded regions 6B comprised of a second compound semiconductor of the zinc blende structure, in the holes H, and an active layer 4 to supply light to the photonic crystal layer 6, in which a principal surface of the basic layer 6A is a (001) plane and in which side faces of each hole H have at least three different {100} facets.
    Type: Application
    Filed: June 21, 2011
    Publication date: May 16, 2013
    Applicants: KYOTO UNIVERSITY, HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi Hirose, Shinichi Furuta, Akiyoshi Watanabe, Takahiro Sugiyama, Kousuke Shibata, Yoshitaka Kurosaka, Susumu Noda
  • Patent number: 7982835
    Abstract: A transflective liquid crystal display device is provided with a liquid crystal layer sandwiched between a first substrate with an array of switching elements and a second substrate with a black matrix so as to form a first area for a normally black display and a second area for a normally white display A first electric potential difference formed between the black matrix and both of the first common electrode and the first pixel electrode formed in the first area on the first substrate is made to be smaller than a larger one of the second electric potential difference formed between the black matrix and both of the second common electrode and the second pixel electrode formed in the second area.
    Type: Grant
    Filed: February 27, 2009
    Date of Patent: July 19, 2011
    Assignee: NEC LCD Technologies, Ltd.
    Inventors: Kenichirou Naka, Hiroshi Nagai, Michiaki Sakamoto, Kenichi Mori, Kousuke Shibata
  • Publication number: 20090237578
    Abstract: A transflective liquid crystal display device is provided with a liquid crystal layer sandwiched between a first substrate with an array of switching elements and a second substrate with a black matrix so as to form a first area for a normally black display and a second area for a normally white display A first electric potential difference formed between the black matrix and both of the first common electrode and the first pixel electrode formed in the first area on the first substrate is made to be smaller than a larger one of the second electric potential difference formed between the black matrix and both of the second common electrode and the second pixel electrode formed in the second area.
    Type: Application
    Filed: February 27, 2009
    Publication date: September 24, 2009
    Applicant: NEC LCD TECHNOLOGIES, LTD.
    Inventors: Kenichiro NAKA, Hiroshi Nagai, Michiaki Sakamoto, Kenichi Mori, Kousuke Shibata