Abstract: An electrostatic chuck includes: an electrically-conductive base plate including a first part, a second part at an outer circumference of the first part, and a gas inlet path for introducing a cooling gas; a first electrostatic chuck part configured to clamp a wafer on the first part, including a ceramic dielectric substrate that includes an embedded first clamping electrode and at least one through-hole communicating with the gas inlet path; and a second electrostatic chuck part configured to clamp a focus ring on the second part, including a ceramic layer that includes at least one through-hole for introducing a cooling gas and that includes at least a first layer contacting the focus ring when the second electrostatic chuck part clamps the focus ring, in which the first layer is less dense than the ceramic dielectric substrate. Thereby, the electrostatic chuck can increase the device yield.

Abstract: An electrostatic chuck includes: an electrically-conductive base plate including a first part, a second part at an outer circumference of the first part, and a gas inlet path for introducing a cooling gas; a first electrostatic chuck part configured to clamp a wafer on the first part, including a ceramic dielectric substrate that includes an embedded first clamping electrode and at least one through-hole communicating with the gas inlet path; and a second electrostatic chuck part configured to clamp a focus ring on the second part, including a ceramic layer that includes at least one through-hole for introducing a cooling gas and that includes at least a first layer contacting the focus ring when the second electrostatic chuck part clamps the focus ring, in which the first layer is less dense than the ceramic dielectric substrate. Thereby, the electrostatic chuck can increase the device yield.

Abstract: An electrostatic chuck includes: an electrically-conductive base plate including a first part, a second part at an outer circumference of the first part, and a gas inlet path for introducing a cooling gas; a first electrostatic chuck part configured to clamp a wafer on the first part, including a ceramic dielectric substrate that includes an embedded first clamping electrode and at least one through-hole communicating with the gas inlet path; and a second electrostatic chuck part configured to clamp a focus ring on the second part, including a ceramic layer that includes at least one through-hole for introducing a cooling gas and that includes at least a first layer contacting the focus ring when the second electrostatic chuck part clamps the focus ring, in which the first layer is less dense than the ceramic dielectric substrate. Thereby, the electrostatic chuck can increase the device yield.

Abstract: A gas analyzing apparatus including a reactor for decomposing a target substance contained in a gas to produce a product gas containing a decomposition product, a contacting chamber connected to the reactor and having a quartz oscillator disposed therewithin. The quartz oscillator has opposing surfaces each provided with an electrode, at least one of the electrodes being reactable with the decomposition product so that the decomposition product when contacted with the reactable electrode is reacted with the reactable electrode to cause a frequency deviation which is detected by a frequency measuring device.

Abstract: A gas analyzing apparatus including a reactor for decomposing a target substance contained in a gas to produce a product gas containing a decomposition product, a contacting chamber connected to the reactor and having a quartz oscillator disposed therewithin. The quartz oscillator has opposing surfaces each provided with an electrode, at least one of the electrodes being reactable with the decomposition product so that the decomposition product when contacted with the reactable electrode is reacted with the reactable electrode to cause a frequency deviation which is detected by a frequency measuring device.