Patents by Inventor Kouta YOKOYAMA
Kouta YOKOYAMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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ANTENNA MODULE, COMMUNICATION DEVICE INCLUDING THE SAME, AND METHOD FOR MANUFACTURING ANTENNA MODULE
Publication number: 20240120663Abstract: An antenna module includes an antenna substrate and a feed circuit. The antenna substrate has an upper surface and a lower surface, and a radiating element having a flat plate shape is arranged in the antenna substrate. The feed circuit 105 is mounted on the lower surface of the antenna substrate and supplies a radio frequency signal to the radiating element. The antenna substrate includes a dielectric substrate on which the radiating element is arranged, a ground electrode, a feed wiring, and carbides. The ground electrode is arranged between the radiating element and the lower surface in the dielectric substrate. The feed wiring transmits the radio frequency signal supplied from the feed circuit to the radiating element. The carbides are disposed on at least a part of a side surface connecting the upper surface and the lower surface in the dielectric substrate.Type: ApplicationFiled: October 4, 2023Publication date: April 11, 2024Applicant: Murata Manufacturing Co., Ltd.Inventors: Kouta KINUGAWA, Atsushi KASUYA, Michiharu YOKOYAMA, Kengo ONAKA -
Patent number: 11949005Abstract: Provided is a semiconductor device that includes a first conductivity type well region below a gate runner portion, wherein a diode region includes first contact portions, a first conductivity type anode region, and a second conductivity type cathode region; wherein the well region contacts the diode region in the first direction, and when an end of the well region, an end of at least one of first contact portions, and an end of the cathode region that face one another in the first direction are imaginary projected on an upper surface of the semiconductor substrate, a first distance is longer than a second distance, the first distance being a distance between the end of the well region and the end of the cathode region, and the second distance being a distance between the end of the well region and the end of the at least one first contact portion.Type: GrantFiled: June 23, 2022Date of Patent: April 2, 2024Assignee: FUJI ELECTRIC CO., LTD.Inventors: Misaki Takahashi, Yuichi Harada, Kouta Yokoyama
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Patent number: 11532738Abstract: Provided is a semiconductor device that includes a semiconductor substrate that is provided with a first conductivity type drift region, a transistor portion that includes a second conductivity type collector region in contact with a lower surface of the semiconductor substrate, and a diode portion that includes a first conductivity type cathode region in contact with the lower surface of the semiconductor substrate, and is alternately disposed with the transistor portion along an arrangement direction in an upper surface of the semiconductor substrate. In the transistor portions, a width in the arrangement direction of two or more transistor portions sequentially selected from the transistor portions nearer to the center in the arrangement direction of the semiconductor substrate is larger than a width in the arrangement direction of one of the other transistor portions.Type: GrantFiled: June 24, 2020Date of Patent: December 20, 2022Assignee: FUJI ELECTRIC CO., LTD.Inventors: Kouta Yokoyama, Toru Ajiki, Kaname Mitsuzuka, Tohru Shirakawa
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Publication number: 20220328664Abstract: Provided is a semiconductor device that includes a first conductivity type well region below a gate runner portion, wherein a diode region includes first contact portions, a first conductivity type anode region, and a second conductivity type cathode region; wherein the well region contacts the diode region in the first direction, and when an end of the well region, an end of at least one of first contact portions, and an end of the cathode region that face one another in the first direction are imaginary projected on an upper surface of the semiconductor substrate, a first distance is longer than a second distance, the first distance being a distance between the end of the well region and the end of the cathode region, and the second distance being a distance between the end of the well region and the end of the at least one first contact portion.Type: ApplicationFiled: June 23, 2022Publication date: October 13, 2022Inventors: Misaki TAKAHASHI, Yuichi HARADA, Kouta YOKOYAMA
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Publication number: 20220278094Abstract: Provided is a semiconductor device including a semiconductor substrate including a transistor portion and a diode portion. The semiconductor substrate includes a drift region of a first conductivity type provided inside. The transistor portion includes: a transistor region separated from the diode portion in a top view of the semiconductor substrate; and a boundary region located between the transistor region and the diode portion in a top view of the semiconductor substrate and including a lifetime control region on a front surface side of the semiconductor substrate in the drift region. The boundary region has a current suppression structure.Type: ApplicationFiled: May 18, 2022Publication date: September 1, 2022Inventors: Kouta YOKOYAMA, Toru AJIKI, Tohru SHIRAKAWA
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Patent number: 11380784Abstract: Provided is a semiconductor device that includes a first conductivity type well region below a gate runner portion, wherein a diode region includes first contact portions, a first conductivity type anode region, and a second conductivity type cathode region; wherein the well region contacts the diode region in the first direction, and when an end of the well region, an end of at least one of first contact portions, and an end of the cathode region that face one another in the first direction are imaginary projected on an upper surface of the semiconductor substrate, a first distance is longer than a second distance, the first distance being a distance between the end of the well region and the end of the cathode region, and the second distance being a distance between the end of the well region and the end of the at least one first contact portion.Type: GrantFiled: January 27, 2020Date of Patent: July 5, 2022Assignee: FUJI ELECTRIC CO., LTD.Inventors: Misaki Takahashi, Yuichi Harada, Kouta Yokoyama
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Patent number: 11107910Abstract: Provided is a semiconductor device that includes: a first conductivity type anode region provided in the semiconductor substrate in the diode region; a second conductivity type drift region that is located below the anode region in the semiconductor substrate; a second conductivity type accumulation region that is located between the anode region and the drift region in a depth direction of the semiconductor substrate; and an insulating film that includes a plurality of contact portions extending in a first direction and is provided on an upper surface of the semiconductor substrate; wherein the plurality of contact portions include a first contact portion provided in the diode region; and the first contact portion includes a first non-overlapping region in which an end of the first contact portion and the accumulation region in the first direction do not overlap in the depth direction.Type: GrantFiled: January 27, 2020Date of Patent: August 31, 2021Assignee: FUJI ELECTRIC CO., LTD.Inventors: Yuichi Harada, Misaki Takahashi, Kouta Yokoyama
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Publication number: 20210043758Abstract: Provided is a semiconductor device that includes a semiconductor substrate that is provided with a first conductivity type drift region, a transistor portion that includes a second conductivity type collector region in contact with a lower surface of the semiconductor substrate, and a diode portion that includes a first conductivity type cathode region in contact with the lower surface of the semiconductor substrate, and is alternately disposed with the transistor portion along an arrangement direction in an upper surface of the semiconductor substrate. In the transistor portions, a width in the arrangement direction of two or more transistor portions sequentially selected from the transistor portions nearer to the center in the arrangement direction of the semiconductor substrate is larger than a width in the arrangement direction of one of the other transistor portions.Type: ApplicationFiled: June 24, 2020Publication date: February 11, 2021Inventors: Kouta YOKOYAMA, Toru AJIKI, Kaname MITSUZUKA, Tohru SHIRAKAWA
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Publication number: 20200161460Abstract: Provided is a semiconductor device that includes: a first conductivity type anode region provided in the semiconductor substrate in the diode region; a second conductivity type drift region that is located below the anode region in the semiconductor substrate; a second conductivity type accumulation region that is located between the anode region and the drift region in a depth direction of the semiconductor substrate; and an insulating film that includes a plurality of contact portions extending in a first direction and is provided on an upper surface of the semiconductor substrate; wherein the plurality of contact portions include a first contact portion provided in the diode region; and the first contact portion includes a first non-overlapping region in which an end of the first contact portion and the accumulation region in the first direction do not overlap in the depth direction.Type: ApplicationFiled: January 27, 2020Publication date: May 21, 2020Inventors: Yuichi HARADA, Misaki TAKAHASHI, Kouta YOKOYAMA
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Publication number: 20200161457Abstract: Provided is a semiconductor device that includes a first conductivity type well region below a gate runner portion, wherein a diode region includes first contact portions, a first conductivity type anode region, and a second conductivity type cathode region; wherein the well region contacts the diode region in the first direction, and when an end of the well region, an end of at least one of first contact portions, and an end of the cathode region that face one another in the first direction are imaginary projected on an upper surface of the semiconductor substrate, a first distance is longer than a second distance, the first distance being a distance between the end of the well region and the end of the cathode region, and the second distance being a distance between the end of the well region and the end of the at least one first contact portion.Type: ApplicationFiled: January 27, 2020Publication date: May 21, 2020Inventors: Misaki TAKAHASHI, Yuichi HARADA, Kouta YOKOYAMA