Abstract: The fixing device includes: a fixing belt that is heated by a heater lamp; a pressure roller that makes contact with the fixing belt; a fixing pad that sandwiches the fixing belt from the inner side of the fixing belt and is arranged opposing the pressure roller, and which forms a nip portion between the fixing belt and the pressure roller; a sliding sheet provided between the fixing pad and the fixing belt, which reduces the frictional force with the fixing belt; and a pad heat transfer plate provided between the sliding sheet and the fixing pad, which adjusts the heat transfer in a longitudinal direction of the fixing belt. The fixing pad has protrusions and that make contact with the pad heat transfer plate, and forms a gap between the fixing pad and the pad heat transfer plate in a location where the protrusions and are not making contact.

Abstract: A heat source unit for a heat pump having a refrigerant circuit, the heat source unit having: an outer casing including a bottom plate; and a compressor assembly accommodated in the outer casing, the compressor assembly including a compressor of the refrigerant circuit of the heat pump including a compressor housing, a support plate supporting the compressor, the support plate being mounted via dampers to the bottom plate, and a compressor casing enclosing the compressor and the compressor housing. A damping mechanism is arranged between the compressor and the support plate, and the compressor casing is fixed to the support plate out of contact with the compressor housing.

Abstract: An outdoor unit for a heat pump includes a refrigerant circuit, the outdoor unit including a compressor, a discharge pipe of the refrigerant circuit connected to a discharge side of the compressor, a bottom plate, the bottom plate having a base and an outer flange protruding upward from an outer edge of the base, a heat source heat exchanger supported on the bottom plate, a liquid refrigerant pipe of the refrigerant circuit connected to the heat source heat exchanger, and a defrosting bypass pipe connected at one end to the discharge pipe and at the opposite end to the liquid refrigerant pipe, the defrosting bypass pipe being arranged between an inner side of the flange and an outer side of the heat source heat exchanger.

Abstract: A fixing device is configured to move the pressure release member in predetermined movement directions relative to the support member such that the biasing member can function. The support member has a first retaining part. The pressure release member has a retention element to be held in the first retaining part of the support member. When the retention element is held in the first retaining part of the support member, the pressure release member is configured to apply a biasing force of the biasing member to the support member and thereby to cause the second fixing member to be pressed against the first fixing member.

Abstract: A fixing device is configured to move the pressure release member in predetermined movement directions relative to the support member such that the biasing member can function. The support member has a first retaining part. The pressure release member has a retention element to be held in the first retaining part of the support member. When the retention element is held in the first retaining part of the support member, the pressure release member is configured to apply a biasing force of the biasing member to the support member and thereby to cause the second fixing member to be pressed against the first fixing member.

Abstract: The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.

Abstract: A silicic coating of 2.4 g/cm3 or higher density, obtained by forming a silicic coating precursor with the use of at least one type of silane compound having a photosensitive functional group and thereafter irradiating the silicic coating precursor with at least one type of light. This silicic coating can be used as a novel barrier film or stopper film for semiconductor device.

Abstract: The method of manufacturing the semiconductor device includes forming an insulating film above a semiconductor substrate, forming an opening in the insulating film, forming a conductive film above the insulating film with the opening formed, removing the conductive film above the insulating film to bury the conductive film in the opening, and processing a surface of the insulating film with a silicon compound including Si—N or Si—Cl.

Abstract: An interfacial roughness reducing film which is in contact, on one side thereof, with an insulating film and in contact, on a side opposite from the one side, with wiring comprises a Si—O bond, and is formed using a composition containing a silicon compound that comprises at least one bond of Si—N bonds and Si—Cl bonds wherein the number of Si—N bonds and Si—Cl bonds combined per molecule of the compound is at least two. An interfacial roughness between the interfacial roughness reducing film and the wiring is smaller than that between the interfacial roughness reducing film and the insulating film.

Abstract: The method of manufacturing the semiconductor device includes forming an insulating film above a semiconductor substrate, forming an opening in the insulating film, forming a conductive film above the insulating film with the opening formed, removing the conductive film above the insulating film to bury the conductive film in the opening, and processing a surface of the insulating film with a silicon compound including Si—N or Si—Cl.

Abstract: A silicic coating of 2.4 g/cm3 or higher density, obtained by forming a silicic coating precursor with the use of at least one type of silane compound having a photosensitive functional group and thereafter irradiating the silicic coating precursor with at least one type of light. This silicic coating can be used as a novel barrier film or stopper film for semiconductor device.

Abstract: The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.

Abstract: An interfacial roughness reducing film which is in contact, on one side thereof, with an insulating film and in contact, on a side opposite from the one side, with wiring comprises a Si—O bond, and is formed using a composition containing a silicon compound that comprises at least one bond of Si—N bonds and Si—Cl bonds wherein the number of Si—N bonds and Si—Cl bonds combined per molecule of the compound is at least two. An interfacial roughness between the interfacial roughness reducing film and the wiring is smaller than that between the interfacial roughness reducing film and the insulating film.

Abstract: The barber/beauty chair of the present invention aims at achieving the above-described object and there is provided a barber/beauty chair comprising: a chair mounting member mounted on a base through elevation means; a chair mounted on the chair mounting member; and a shampoo bowl mounted on the side of a back rest of the chair on the chair mounting member.