Abstract: For measurement of an error of alignment between first and second patterns overlappingly formed on a same substrate, first and second alignment reference marks of predetermined symmetric shapes are formed at a predetermined position of the substrate during formation of the first and second patterns. The first and second marks formed on the substrate are detected optically to obtain dimension detection data of the first or second mark as well as respective position detection data of the first and second marks. Respective symmetry centers of the first and second marks are determined on the basis of the respective position detection data of the first and second marks, and then an error of the alignment between the first and second patterns is determined on the basis of a positional deviation between the symmetry centers of the first and marks.

Abstract: For measurement of an error of alignment between first and second patterns overlappingly formed on a same substrate, first and second alignment reference marks of predetermined symmetric shapes are formed at a predetermined position of the substrate during formation of the first and second patterns. The first and second marks formed on the substrate are detected optically to obtain dimension detection data of the first or second mark as well as respective position detection data of the first and second marks. Respective symmetry centers of the first and second marks are determined on the basis of the respective position detection data of the first and second marks, and then an error of the alignment between the first and second patterns is determined on the basis of a positional deviation between the symmetry centers of the first and marks.