Patents by Inventor Kraisom Throngnumchai

Kraisom Throngnumchai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode
    Patent number: 7183575
    Abstract: A high reverse voltage diode includes a hetero junction made up from a silicon carbide base layer, which constitutes a first semiconductor base layer, and a polycrystalline silicon layer, which constitutes a second semiconductor layer, and whose band gap is different from that of the silicon carbide base layer. A low concentration N type polycrystalline silicon layer is deposited on a first main surface side of the silicon carbide base layer, and a metal electrode is formed on a second main surface side of the silicon carbide base layer which is opposite to the first main surface side thereof.
    Type: Grant
    Filed: February 19, 2003
    Date of Patent: February 27, 2007
    Assignee: Nissan Motor Co., Ltd.
    Inventors: Yoshio Shimoida, Saichirou Kaneko, Hideaki Tanaka, Masakatsu Hoshi, Kraisom Throngnumchai, Teruyoshi Mihara, Tetsuya Hayashi