Abstract: A method for preparing porous silicon in which an oxidized single crystal silicon wafer is first bonded to a polycrystalline wafer. The oxidized high quality wafer is then thinned to the desired thickness by grinding and polishing. An oxide may then be deposited on the wafer and patterned to expose regions were the porous silicon will be formed. The single crystal silicon wafer may then etched in the unmasked areas of the pattern to thin the single crystal silicon wafer to the desired thickness in the range of 0.1 microns to 1.0 microns. Next, the porous silicon may be formed using standard techniques. Once the porous silicon is formed the polycrystalline silicon wafer may be ground away and the oxide layer may be undercut to expose the porous silicon. Finally, an appropriate liner material may be applied to the porous silicon.

Abstract: Embodiments of methods of forming a high thermal conductivity diamond film on a substrate using at least two different average particle sizes of diamond for nucleation and its associated structures.

Abstract: Disclosed is a method of forming a substrate having islands of diamond (or other material, such as diamond-like carbon), as well as integrated circuit devices formed from such a substrate. A diamond island can form part of the thermal solution for an integrated circuit formed on the substrate, and the diamond island can also provide part of a stress engineering solution to improve performance of the integrated circuit. Other embodiments are described and claimed.

Abstract: Processes are described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. The die has a diamond layer which primarily serves to spread heat from hot spots of an integrated circuit in the die.

Abstract: Embodiments of the invention provide substrate with an insulator layer on the substrate. The insulator layer may comprise diamond-like carbon. A device, such a tri-gate transistor may be formed on the diamond-like carbon layer.

Abstract: A method and apparatus for limiting net curvature in a substrate is provided. A layer is formed on one side of a substrate to limit curvature that may be introduced in the substrate by formation of a thermal spreading layer on an opposing side of the substrate. For example, introduction of a diamond layer on a substrate to dissipate thermal energy away from a semiconductor layer may introduce tensile or compressive stress in the substrate and result in undesirable bowing and/or warping of the substrate. To limit this curvature, a curvature limiting layer, e.g. another diamond layer, may be formed on subjacent to the substrate.

Abstract: Methods of forming a microelectronic structure are described. Those methods comprise forming a diamond layer on a substrate, wherein a portion of the diamond layer comprises defects; and then forming pores in the diamond layer by removing the defects from the diamond layer.

Abstract: A stressed semiconductor using carbon is provided. At least one carbon layer containing diamond is formed either below a semiconductor layer or above a semiconductor device. The carbon layer induces stress in the semiconductor layer, thereby increasing carrier mobility in the device channel region. The carbon layer may be selectively formed or patterned to localize the induced stress.

Abstract: A method and structure for using porous diamond interlayer dielectrics (ILDs) in conjunction with carbon nanotube interconnects is herein described. A diamond ILD is deposited on an underlaying layer. The diamond layer is optionally and selectively removed of non-sp3 bond to create a porous diamond film. Trenches and vias are etched in the porous diamond ILD. Carbon nanotubes are deposited on the diamond ILD filling the trenches using a liquid crystal host-carbon nanotube solution. Using methods of nematic liquid crystal alignment, the carbon nanotubes are aligned under the influence of the liquid crystals. At least some of the liquid crystal solution is removed leaving an aligned carbon nanotubes.

Abstract: Methods of forming a microelectronic structure are described. Those methods comprise forming a bond between a non-device side of a first die and a non-device side of a second die, wherein forming the bond between the non-device side of the first die and the non-device side of the second die does not comprise using an interfacial glue.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a plurality of openings in a portion of a first side of a substrate, bonding a first silicon layer of a silicon on insulator wafer to the first side of the substrate, wherein the silicon on insulator wafer comprises the first silicon layer disposed on an insulator layer disposed on a second silicon layer, forming a plurality of support structures by removing a portion of a second side of the substrate, removing the second silicon layer and removing the insulator layer.

Abstract: Methods of forming a microelectronic structure are described. Those methods comprise forming a bond between a non-device side of a first die and a non-device side of a second die, wherein forming the bond between the non-device side of the first die and the non-device side of the second die does not comprise using an interfacial glue.

Abstract: Diamond and non-diamond composite film may be exposed to oxygen plasma to gasify the non-diamond forms of carbon, leaving porosity in the resulting structure. In some cases, highly desirable dielectric materials may be formed with high dielectric constants and good mechanical strength.

Abstract: The porosity of a diamond film may be increased and its dielectric constant lowered by exposing a film containing sp3 hybridization to ion implantation. The implantation produces a greater concentration of sp2 hybridizations. The sp2 hybridizations may then be selectively etched, for example, using atomic hydrogen plasma to increase the porosity of the film. A series of layers may be deposited and successively treated in the same fashion to build up a composite, porous diamond film.

Abstract: The present invention discloses a method including: providing a substrate; and sequentially stacking layers of two or more diamond-like carbon (DLC) films over the substrate to form a composite dielectric film, the composite dielectric film having a k value of about 1.5 or lower, the composite dielectric film having a Young's modulus of elasticity of about 25 GigaPascals or higher. The present invention further discloses a structure including: a substrate; a porous diamond-like carbon (DLC) film located over the substrate; an opening located in the porous DLC film; and a conductor located in the opening.

Abstract: Diamond and non-diamond composite film may be exposed to oxygen plasma to gasify the non-diamond forms of carbon, leaving porosity in the resulting structure. In some cases, highly desirable dielectric materials may be formed with high dielectric constants and good mechanical strength.

Abstract: Methods of forming a microelectronic structure are described. Those methods comprise forming a diamond layer on a substrate, wherein a portion of the diamond layer comprises defects; and then forming pores in the diamond layer by removing the defects from the diamond layer.

Abstract: An apparatus includes an integrated circuit (IC) die having a substrate formed of a first semiconductor material and a cooling device form of a second semiconductor material. The cooling device is directly mounted to the substrate of the IC die.

Abstract: A double gate silicon over insulator transistor may be formed wherein the bottom gate electrode is formed of a doped diamond film. The doped diamond film may be formed in the process of semiconductor manufacture resulting in an embedded electrode. The diamond film may be advantageous as a heat spreader.

Abstract: A method of forming a high thermal conductivity diamond film and its associated structures comprising selectively nucleating a region of a substrate, and forming a diamond film on the substrate such that the diamond film has large grains, which are at least about 20 microns in size. Thus, the larger grained diamond film has greatly improved thermal management capabilities and improves the efficiency and speed of a microelectronic device.