Abstract: Methods, devices and monitoring systems are described that include a hub in communication with sensors that aggregate activities in an enclosure, such as a building. The hub identifies when those activities are occurring more or less often than expected and classifies the activity to piece together and learn the user's or individual's daily activity. Additional satellite devices may be added that increase the range and capacity of the sensors for collecting more information and activity within the building. In this manner, the monitoring systems use a redundant array of sensors to consistently monitor activities occurring in or around a building to create a trail and heatmap of events and activities that the monitoring system's hub classifies, verifies with other sensors, learns, and then correctly processes.

Abstract: A magnetically attachable sensor assembly for sensing cutting tool operation. The magnetically attachable sensor assembly comprises an acoustic and vibration sensing apparatus, or sensor package, disposed in a housing having a portable, magnetic form factor for portability and easy clamping/attachment to a number of different surfaces.

Abstract: Scanning laser crystallization of p- and n- type hydrogenated amorphous silicon alloy cladding layers enhances the doping efficiency of such layers without changing the luminescence or other important properties of the middle i-layer in a p-i-n device. The dc dark conductivity of the doped layers increases by a factor of about 100 to about 10,000 above a sharp laser energy density threshold whose magnitude increases with decreasing impurity concentration. In one method, a doped amorphous silicon alloy layer is deposited on an amorphous glass substrate, scanned with laser irradiation, and then an intermediate i-layer is formed over this layer. Another doped amorphous silicon alloy layer is deposited on this layer, doped oppositely from the first doped layer. The second doped layer is then crystallized by scanning laser irradiation, leaving the underlying i-layer virtually unchanged in optical and electronic properties.

Abstract: Scanning laser crystallization of p- and n-type hydrogenated amorphous silicon alloy cladding layers enhances the doping efficiency of such layers without changing the luminescence or other important properties of the middle i-layer in a p-i-n device. The dc dark conductivity of the doped layers increases by a factor of about 100 to about 10,000 above a sharp laser energy density threshold whose magnitude increases with decreasing impurity concentration. In one method, a doped amorphous silicon alloy layer is deposited on an amorphous glass substrate, scanned with laser irradiation, and then an intermediate i-layer is formed over this layer. Another doped amorphous silicon alloy layer is deposited on this layer, doped oppositely from the first doped layer. The second doped layer is then crystallized by scanning laser irradiation, leaving the underlying i-layer virtually unchanged in optical and electronic properties.