Patents by Inventor Krishna P. Murella
Krishna P. Murella has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11692110Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2:SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.Type: GrantFiled: June 21, 2021Date of Patent: July 4, 2023Assignee: Versum Materials US, LLCInventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
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Publication number: 20230193079Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates; low oxide trench dishing, and high oxide: SiN selectivity. Dual chemical additives comprise at least one silicone-containing compound comprising at least one of (1) ethylene oxide and propylene oxide (EO-PO) group, and at least one of substituted ethylene diamine group on the same molecule; and (2) at least one non-ionic organic molecule having at least two, preferably at least four hydroxyl functional groups.Type: ApplicationFiled: May 25, 2021Publication date: June 22, 2023Inventors: XIAOBO SHI, KRISHNA P. MURELLA, JOSEPH D. ROSE, HONGJUN ZHOU, MARK LEONARD O'NEILL
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Patent number: 11667839Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2:SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(?)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.Type: GrantFiled: June 22, 2021Date of Patent: June 6, 2023Assignee: Versum Materials US, LLCInventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
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Patent number: 11608451Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates. Chemical additives comprise at least one nitrogen-containing aromatic heterocyclic compound and at least one non-ionic organic molecule having more than one hydroxyl functional group organic.Type: GrantFiled: January 8, 2020Date of Patent: March 21, 2023Assignee: VERSUM MATERIALS US, LLCInventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
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Publication number: 20230020073Abstract: High oxide film removal rate Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods, and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and a chemical additive for providing a high oxide film removal rate. The chemical additive is a gelatin molecule possessing negative and positive charges on the same molecule.Type: ApplicationFiled: December 2, 2020Publication date: January 19, 2023Applicant: Versum Materials US, LLCInventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
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Patent number: 11549034Abstract: The present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic metal oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the first group of non-ionic organic molecules multi hydroxyl functional groups in the same molecule; chemical additives selected from the second group of aromatic organic molecules with sulfonic acid group or sulfonate salt functional groups and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.Type: GrantFiled: August 6, 2019Date of Patent: January 10, 2023Assignee: VERSUM MATERIALS US, LLCInventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
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Patent number: 11326076Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing high oxide film removal rate. The dual chemical additives comprise gelatin compounds possessing negative and positive charges on the same molecule, and non-ionic organic molecules having multi hydroxyl functional groups in the same molecule.Type: GrantFiled: January 8, 2020Date of Patent: May 10, 2022Assignee: VERSUM MATERIALS US, LLCInventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
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Patent number: 11254839Abstract: The present invention discloses STI CMP polishing compositions, methods and systems that significantly reduce oxide trench dishing and improve over-polishing window stability in addition to provide high and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable high selectivity of SiO2:SiN through the use of an unique combination of ceria inorganic oxide particles, such as ceria coated silica particles as abrasives, and an oxide trench dishing reducing additive of poly(methacrylic acids), its derivatives, its salts, or combinations thereof.Type: GrantFiled: December 12, 2019Date of Patent: February 22, 2022Assignee: VERSUM MATERIALS US, LLCInventors: Xiaobo Shi, Joseph D. Rose, Hongjun Zhou, Krishna P. Murella, Mark Leonard O'Neill
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Patent number: 11180678Abstract: Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the group consisting of an organic acetylene molecule containing an acetylene bond and at least two or multi ethoxylate functional groups with terminal hydroxyl groups, an organic molecule with at least two or multi hydroxyl functional groups in the same molecule, and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.Type: GrantFiled: October 27, 2019Date of Patent: November 23, 2021Assignee: VERSUM MATERIALS US, LLCInventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
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Publication number: 20210324270Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2:SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(?)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.Type: ApplicationFiled: June 22, 2021Publication date: October 21, 2021Applicant: Versum Materials US, LLCInventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
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Publication number: 20210309885Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.Type: ApplicationFiled: June 21, 2021Publication date: October 7, 2021Applicant: Versum Materials US, LLCInventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
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Patent number: 11111415Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.Type: GrantFiled: October 4, 2019Date of Patent: September 7, 2021Assignee: Versum Materials US, LLCInventors: James Matthew Henry, Hongjun Zhou, Krishna P. Murella, Dnyanesh Chandrakant Tamboli, Joseph Rose
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Patent number: 11078417Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(?)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.Type: GrantFiled: June 24, 2019Date of Patent: August 3, 2021Assignee: Versum Materials US, LLCInventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
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Patent number: 11072726Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.Type: GrantFiled: June 24, 2019Date of Patent: July 27, 2021Assignee: Versum Materials US, LLCInventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
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Publication number: 20210179890Abstract: The present invention discloses STI CMP polishing compositions, methods and systems that significantly reduce oxide trench dishing and improve over-polishing window stability in addition to provide high and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable high selectivity of SiO2:SiN through the use of an unique combination of ceria inorganic oxide particles, such as ceria coated silica particles as abrasives, and an oxide trench dishing reducing additive of poly(methacrylic acids), its derivatives, its salts, or combinations thereof.Type: ApplicationFiled: December 12, 2019Publication date: June 17, 2021Applicant: Versum Materials US, LLCInventors: Xiaobo Shi, Joseph D. Rose, Hongjun Zhou, Krishna P. Murella, Mark Leonard O'Neill
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Patent number: 10894906Abstract: Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.Type: GrantFiled: August 6, 2019Date of Patent: January 19, 2021Assignee: Versum Materials US, LLCInventors: Hongjun Zhou, John Edward Quincy Hughes, Krishna P. Murella, Reinaldo Mario Machado, Mark Leonard O'Neill, Dnyanesh Chandrakant Tamboli
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Publication number: 20200270479Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) compositions, methods of using the composition and systems for using the composition are provided. The compositions comprise abrasive particles, and two different groups of chemical additives; a non-ionic organic surfactant molecule including polysorbate-type surfactants formed by the ethoxylation of the sorbitan and non-ionic organic molecules with multi hydroxyl functional groups in the same molecule. The compositions provide high silicon oxide removal rate (RR) and suppressed SiN removal rate (RR). A good pattern performance are provided by the compositions which offer desired silicon oxide RR at a reasonable DF and showing the high SiN RR suppression at an even higher DF from the blanket wafer data.Type: ApplicationFiled: January 22, 2020Publication date: August 27, 2020Applicant: Versum Materials US, LLCInventors: Joseph D. Rose, Xiabo Shi, Hongjun Zhou, Krishna P. Murella
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Publication number: 20200239736Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates. Chemical additives comprise at least one nitrogen-containing aromatic heterocyclic compound and at least one non-ionic organic molecule having more than one hydroxyl functional group organic.Type: ApplicationFiled: January 8, 2020Publication date: July 30, 2020Applicant: Versum Materials US, LLCInventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
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Publication number: 20200239735Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing high oxide film removal rate. The dual chemical additives comprise gelatin compounds possessing negative and positive charges on the same molecule, and non-ionic organic molecules having multi hydroxyl functional groups in the same molecule.Type: ApplicationFiled: January 8, 2020Publication date: July 30, 2020Applicant: Versum Materials US, LLCInventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
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Patent number: 10669449Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.Type: GrantFiled: September 9, 2018Date of Patent: June 2, 2020Assignee: VERSUM MATERIALS US, LLCInventors: Hongjun Zhou, Jo-Ann Theresa Schwartz, Malcolm Grief, Xiaobo Shi, Krishna P. Murella, Steven Charles Winchester, John Edward Quincy Hughes, Mark Leonard O'Neill, Andrew J. Dodd, Dnyanesh Chandrakant Tamboli, Reinaldo Mario Machado