Abstract: A nanomechanical device, operating as a reprogrammable logic gate, and performing fundamental logic functions such as AND/OR and NAND/NOR. The logic function can be programmed (e.g., from AND to OR) dynamically, by adjusting the operating parameters of the resonator. The device can access one of two stable steady states, according to a specific logic function; this operation is mediated by the noise floor which can be directly adjusted, or dynamically tuned via an adjustment of the underlying nonlinearity of the resonator, i.e., it is not necessary to have direct control over the noise floor. The demonstration of this reprogrammable nanomechanical logic gate affords a path to the practical realization of a new generation of mechanical computers.

Abstract: A nanomechanical device, operating as a reprogrammable logic gate, and performing fundamental logic functions such as AND/OR and NAND/NOR. The logic function can be programmed (e.g., from AND to OR) dynamically, by adjusting the operating parameters of the resonator. The device can access one of two stable steady states, according to a specific logic function; this operation is mediated by the noise floor which can be directly adjusted, or dynamically tuned via an adjustment of the underlying nonlinearity of the resonator, i.e., it is not necessary to have direct control over the noise floor. The demonstration of this reprogrammable nanomechanical logic gate affords a path to the practical realization of a new generation of mechanical computers.

Abstract: A logic gate array for implementing logical expressions is provided. The array includes a dynamically configurable logic gate having a chaotic updater for causing the logic gate to alternately operate as one of a several different logic gate types, the dynamically configurable logic gate alternating from operating as one logic gate type to a different logic gate type in response to one or more reference signals. The array also includes one or more additional logic gates.

Abstract: A logic gate implements logical expressions. A least one logic gate input receives at least one input logic gate signal and at least one control signal. At least one output for produces a logic gate output signal. A nonlinear updater operates as a dynamically configurable element to produce a plurality of different logic gates as selected by the control signal. The nonlinear updater includes a nonlinear updater output. The nonlinear updater is configured to apply a nonlinear function to the input logic gate signal to produce the nonlinear updater output signal representing a logical expression being implemented by one of the plurality of different logic gates on the input logic gate signal. A comparator includes a comparator input that is adapted to receive a reference threshold value for producing the logical gate output signal based on a comparison of the nonlinear output signal to the reference threshold value.

Abstract: A logic gate is adapted to implement logical expressions. The logic gate includes at least one input that is adapted to receive an input signal and at least one control signal. At least one of the input signal and the control signal is a noise signal. At least one output is adapted to produce an output signal. A nonlinear updater operates as a dynamically configurable element and produces multiple different logic gates as selected by the control signal based at least in part on the noise signal. The nonlinear updater is electrically coupled to the input and is also electrically coupled to the output. The nonlinear updates is configured to apply a nonlinear function to the input signal in response to the control signal to produce the output signal representing a logical expression being implemented by one of the multiple different logic gates on the input signal.

Abstract: A logic gate implements logical expressions. A least one logic gate input receives at least one input logic gate signal and at least one control signal. At least one output for produces a logic gate output signal. A nonlinear updater operates as a dynamically configurable element to produce a plurality of different logic gates as selected by the control signal. The nonlinear updater includes a nonlinear updater output. The nonlinear updater is configured to apply a nonlinear function to the input logic gate signal to produce the nonlinear updater output signal representing a logical expression being implemented by one of the plurality of different logic gates on the input logic gate signal. A comparator includes a comparator input that is adapted to receive a reference threshold value for producing the logical gate output signal based on a comparison of the nonlinear output signal to the reference threshold value.

Abstract: A logic gate implements logical expressions. A least one logic gate input receives at least one input logic gate signal and at least one control signal. At least one output for produces a logic gate output signal. A nonlinear updater operates as a dynamically configurable element to produce a plurality of different logic gates as selected by the control signal. The nonlinear updater includes a nonlinear updater output. The nonlinear updater is configured to apply a nonlinear function to the input logic gate signal to produce the nonlinear updater output signal representing a logical expression being implemented by one of the plurality of different logic gates on the input logic gate signal. A comparator includes a comparator input that is adapted to receive a reference threshold value for producing the logical gate output signal based on a comparison of the nonlinear output signal to the reference threshold value.

Abstract: A logic gate is adapted to implement logical expressions. The logic gate includes at least one input that is adapted to receive an input signal and at least one control signal. At least one of the input signal and the control signal is a noise signal. At least one output is adapted to produce an output signal. A nonlinear updater operates as a dynamically configurable element and produces multiple different logic gates as selected by the control signal based at least in part on the noise signal. The nonlinear updater is electrically coupled to the input and is also electrically coupled to the output. The nonlinear updates is configured to apply a nonlinear function to the input signal in response to the control signal to produce the output signal representing a logical expression being implemented by one of the multiple different logic gates on the input signal.

Abstract: A logic gate implements logical expressions. A least one logic gate input receives at least one input logic gate signal and at least one control signal. At least one output for produces a logic gate output signal. A nonlinear updater operates as a dynamically configurable element to produce a plurality of different logic gates as selected by the control signal. The nonlinear updater includes a nonlinear updater output. The nonlinear updater is configured to apply a nonlinear function to the input logic gate signal to produce the nonlinear updater output signal representing a logical expression being implemented by one of the plurality of different logic gates on the input logic gate signal. A comparator includes a comparator input that is adapted to receive a reference threshold value for producing the logical gate output signal based on a comparison of the nonlinear output signal to the reference threshold value.

Abstract: A Seek and Scan Probe (SSP) memory device is disclosed. The memory device includes a moving part having microelectromechanical (MEMS) structures fabricated on a first wafer and CMOS and memory medium components fabricating on a second wafer bonded to the first wafer.

Abstract: A logic gate array for implementing logical expressions is provided. The array includes a dynamically configurable logic gate having a chaotic updater for causing the logic gate to alternately operate as one of a several different logic gate types, the dynamically configurable logic gate alternating from operating as one logic gate type to a different logic gate type in response to one or more reference signals. The array also includes one or more additional logic gates.

Abstract: A logic gate array for implementing logical expressions is provided. The array includes a dynamically configurable logic gate having a chaotic updater for causing the logic gate to alternately operate as one of a several different logic gate types, the dynamically configurable logic gate alternating from operating as one logic gate type to a different logic gate type in response to one or more reference signals. The array also includes one or more additional logic gates.

Abstract: A Seek and Scan Probe (SSP) memory device is disclosed. The memory device includes a moving part having microelectromechanical (MEMS) structures fabricated on a first wafer and CMOS and memory medium components fabricating on a second wafer bonded to the first wafer.

Abstract: A method is disclosed. The method includes fabricating microelectromechanical (MEMS) structures of a Seek and Scan Probe (SSP) memory device on a first wafer, and fabricating CMOS and memory medium components of the SSP memory device on a second wafer.

Abstract: A method is disclosed. The method includes fabricating microelectromechanical (MEMS) structures of a Seek and Scan Probe (SSP) memory device on a first wafer, and fabricating CMOS and memory medium components of the SSP memory device on a second wafer.

Abstract: A dynamically configurable logic gate can include a controller configured to provide a first threshold reference signal; an adder configured to sum the first threshold reference signal and at least one input signal to generate a summed signal; a chaotic updater configured to apply a nonlinear function to the summed signal; and a subtractor configured to determine an output signal by taking a difference between a second threshold reference signal and the processed summed signal from the chaotic updater. The logic gate can operate as one of a plurality of different logic gates responsive to adjusting at least one of the threshold reference signals.

Abstract: Briefly, in accordance with one embodiment of the invention, a memory device may include a memory layer and a MEMS layer. The memory layer may include an integrated circuit with a multiplexer and optionally a memory controller and a storage medium disposed on the integrated circuit where the storage medium includes chalcogenide islands as storage elements. The MEMS layer may include a movable MEMS platform having probes to connect selected chalcogenide islands via positioning of the MEMS platform. A high voltage source disposed external to the memory layer and the MEMS layer may provide a high voltage to a stator electrode on the memory layer and to a rotor electrode on the MEMS platform to control movement of the MEMS platform with respect to the storage medium. The memory device may be utilized in portable electronic devices such as media players and cellular telephones to provide a nonvolatile storage of information.

Abstract: A logic gate array for implementing logical expressions is provided. The array includes a dynamically configurable logic gate having a chaotic updater for causing the logic gate to alternately operate as one of a several different logic gate types, the dynamically configurable logic gate alternating from operating as one logic gate type to a different logic gate type in response to one or more reference signals. The array also includes one or more additional logic gates.

Abstract: A dynamically configurable logic gate can include a controller configured to provide a first threshold reference signal; an adder configured to sum the first threshold reference signal and at least one input signal to generate a summed signal; a chaotic updater configured to apply a nonlinear function to the summed signal; and a subtractor configured to determine an output signal by taking a difference between a second threshold reference signal and the processed summed signal from the chaotic updater. The logic gate can operate as one of a plurality of different logic gates responsive to adjusting at least one of the threshold reference signals.

Abstract: A process for forming a protective polyimide layer over a semiconductor substrate includes the steps of curing a deposited polyamic acid layer at a temperature which is sufficient to reduce the etch rate of the acid layer when subsequently exposed to a developer. After formation of a photoresist masking layer over the polyamic acid, the substrate is exposed to a developer to define a plurality of bonding pad openings therein. The developer permeates into the acid layer to form a salt in the regions beneath the openings. Subsequent hardbaking imidizes the polyamic acid, but not the salt regions. Removing the photoresist layer also develops the polyimide which removes the salt regions to expose the underlying bonding pads.