Abstract: Various embodiments may relate to A light-emitting diode, including an LED chip having at least one emitter surface for emitting primary light, and a plurality of luminescent regions, which are connected optically downstream from the at least one emitter surface. At least one harder one of the luminescent regions is embedded in another, softer one of the luminescent regions.

Abstract: Various embodiments relate to a lighting device with an optoelectronic light source, an optical body downstream thereof for distributing the light, and a diffuser downstream of the latter, onto the light entry surface of which the light emitted by the optical body falls and the light exit surface of which represents a light emission surface of the lighting device. To homogenize the luminous intensity on the light exit surface, in addition to distributing the light with the optical body, the diffuser is not provided to be uniformly scattering to such an extent that light falling thereon in a central region is scattered more intensely than light falling thereon in an edge region.

Abstract: Various embodiments may relate to A light-emitting diode, including an LED chip having at least one emitter surface for emitting primary light, and a plurality of luminescent regions, which are connected optically downstream from the at least one emitter surface. At least one harder one of the luminescent regions is embedded in another, softer one of the luminescent regions.

Abstract: Various embodiments may relate to an LED module, including a number of first inherently unpackaged LED chips, which are in each case designed to emit light of a first color at a respective light emission area, and a number of second inherently unpackaged LED chips, which are in each case designed to emit light of a second color, different than the first color, at a respective light emission area. The LED chips are provided jointly in a housing, and the respective light emission area of a second LED chip is at least 25% smaller than the respective light emission area of a first LED chip. The sum of the light emission areas of the first LED chips is at least 50% greater than the sum of the light emission areas of the second LED chips.

Abstract: Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas.

Abstract: A light-emitting diode module for emitting white light includes a first light emitting diode chip for generating radiation in the blue spectral range having a first peak wavelength, a second light emitting diode chip for generating radiation in the blue spectral range having a second peak wavelength, a third light emitting diode chip for generating radiation in the red spectral range having a third peak wavelength, a first and a second phosphors disposed downstream of the first and the second light emitting diode chips, respectively. The first light emitting diode chip with the first phosphor generates a first mixed radiation and the second light emitting diode chip with the second phosphor generates a second mixed radiation. The first phosphor exhibits a first absorption maximum at a wavelength greater than the first peak wavelength. The second phosphor exhibits a second absorption maximum at a wavelength less than the second peak wavelength.

Abstract: An illuminant with at least two LEDs mounted on mutually opposite sides of a support plate and a reflection surface formed as a concave mirror, in which concave mirror the LEDs are arranged, wherein a housing part of the illuminant made of a transparent housing material is provided, which housing part at the same time forms an in relation to the main propagation direction lateral external surface of the illuminant and supports a reflecting layer forming the reflection surface at an internal surface opposite to the external surface.

Abstract: A carrier device for an electrical component includes a carrier, which includes an electrically insulating layer, and an electrical contact layer on the electrically insulating layer The electrical contact layer includes at least one bridge-shaped contact region At least one recess in the electrically insulating layer is arranged at least on one side surface of the bridge-shaped contact region and/or the bridge-shaped contact region includes a bridge width reducing toward the insulating layer.

Abstract: A lighting device may include: a carrier having a mounting surface, at least one luminescence diode chip having, at its side facing away from the carrier, a radiation exit surface, through which electromagnetic radiation generated in the luminescence diode chip during operation emerges at least partly, at least one optical body designed in a radiation-transmissive fashion, and a shaped body including a phosphor, wherein each luminescence diode chip is fixed to the mounting surface on the carrier, each optical body is fixed to the radiation exit surface of an assigned luminescence diode chip, the shaped body encloses each optical body in a positively locking manner at a side surface of the optical body, and the phosphor converts at least part of the electromagnetic radiation generated in at least one of the luminescence diode chips during operation.

Abstract: In various embodiments, a light emitting diode module may include a carrier plate, at least one light emitting diode, and at least one sensor configured to register light emitted by the light emitting diode. The light emitting diode is attached to a light emitting diode installation side of the carrier plate. The sensor is installed countersunk through a hole of the carrier plate in relation to the light emitting diode installation side thereof.

Abstract: The lighting device has at least one LED chip that is potted by means of a potting compound, which potting compound has a light-transmissive, castable and curable matrix material comprising scattering volumes as filler material, wherein the scattering volumes are distributed inhomogeneously over a thickness of the potting compound and these scattering volumes have a lower density than the matrix material in its castable state. A method is used for producing a lighting device, which comprises at least one LED chip, by means of at least the following steps: potting the at least one LED chip by means of a potting compound containing scattering volumes, wherein the scattering volumes have a lower density than a matrix material of the potting compound in this state; curing the potting compound so that an inhomogeneous distribution of the scattering volumes is obtained owing to floating of the scattering volumes in the matrix material.

Abstract: Various embodiments may relate to an LED module, including a number of first inherently unpackaged LED chips, which are in each case designed to emit light of a first color at a respective light emission area, and a number of second inherently unpackaged LED chips, which are in each case designed to emit light of a second color, different than the first color, at a respective light emission area. The LED chips are provided jointly in a housing, and the respective light emission area of a second LED chip is at least 25% smaller than the respective light emission area of a first LED chip. The sum of the light emission areas of the first LED chips is at least 50% greater than the sum of the light emission areas of the second LED chips.

Abstract: A light-emitting diode module for emitting white light includes a first light emitting diode chip for generating radiation in the blue spectral range having a first peak wavelength, a second light emitting diode chip for generating radiation in the blue spectral range having a second peak wavelength, a third light emitting diode chip for generating radiation in the red spectral range having a third peak wavelength, a first and a second phosphors disposed downstream of the first and the second light emitting diode chips, respectively. The first light emitting diode chip with the first phosphor generates a first mixed radiation and the second light emitting diode chip with the second phosphor generates a second mixed radiation. The first phosphor exhibits a first absorption maximum at a wavelength greater than the first peak wavelength. The second phosphor exhibits a second absorption maximum at a wavelength less than the second peak wavelength.

Abstract: Various embodiments relate to a lighting device with an optoelectronic light source, an optical body downstream thereof for distributing the light, and a diffuser downstream of the latter, onto the light entry surface of which the light emitted by the optical body falls and the light exit surface of which represents a light emission surface of the lighting device. To homogenize the luminous intensity on the light exit surface, in addition to distributing the light with the optical body, the diffuser is not provided to be uniformly scattering to such an extent that light falling thereon in a central region is scattered more intensely than light falling thereon in an edge region.

Abstract: A radiation-emitting component comprising a ceramic material, comprising a garnet having the composition represented by the formula A3-xB5O12:Dx and a barium-containing oxide. In the garnet A3-xB5O12:Dx, A is selected from lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal or mixtures thereof. B is selected from aluminum, scandium, gallium, indium, boron or mixtures thereof. D is at least one dopant selected from chromium, manganese and rare earth metals, particularly cerium, praseodymium or gadolinium. The dopant is present with x is 0?x?2.

Abstract: Various embodiments may relate to A light-emitting diode, including an LED chip having at least one emitter surface for emitting primary light, and a plurality of luminescent regions, which are connected optically downstream from the at least one emitter surface. At least one harder one of the luminescent regions is embedded in another, softer one of the luminescent regions.

Abstract: A material, comprising a garnet having the composition represented by the formula A3-xB5O12:Dx and a barium-containing oxide. In the garnet A3-xB5O12:Dx, A is selected from lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal or mixtures thereof. B is selected from aluminum, scandium, gallium, indium, boron or mixtures thereof. D is at least one dopant selected from chromium, manganese and rare earth metals, particularly cerium, praseodymium or gadolinium. The dopant is present with x is 0?x?2.

Abstract: An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.

Abstract: A wavelength conversion structure for a light source including a solid-state light-emitting device. The wavelength conversion structure includes one or more apertures formed therein. The apertures may permit color steering of the light downstream of the conversion structure without a substantial reduction in the output of secondary light produced during a conversion process.

Abstract: An optoelectronic semiconductor component includes a semiconductor layer sequence having at least one active layer, and a photonic crystal that couples radiation having a peak wavelength out of or into the semiconductor layer sequence, wherein the photonic crystal is at a distance from the active layer and formed by superimposition of at least two lattices having mutually different reciprocal lattice constants normalized to the peak wavelength.