Abstract: A seal bolt includes: an elongate and electrically conductive part with a portion extending between first and second locations lengthwise of the bolt; an electrically conductive layer that, between the first and second locations, is spaced from the elongate part; an electrically insulating layer that, between the first and second locations, is disposed between the conductive layer and the elongate part; and structure that electrically couples the elongate part and the conductive layer at a third location, the second location being between the first and third locations. In one configuration, the insulating layer includes aluminum oxide. In another configuration, the conductive layer is one of an amorphous metal and stainless steel. In still another configuration, the conductive layer includes a strip that, from the first location to the second location, has a width less than a circumference of the elongate part.

Abstract: A seal bolt includes: an elongate and electrically conductive part with a portion extending between first and second locations lengthwise of the bolt; an electrically conductive layer that, between the first and second locations, is spaced from the elongate part; an electrically insulating layer that, between the first and second locations, is disposed between the conductive layer and the elongate part; and structure that electrically couples the elongate part and the conductive layer at a third location, the second location being between the first and third locations. In one configuration, the insulating layer includes aluminum oxide. In another configuration, the conductive layer is one of an amorphous metal and stainless steel. In still another configuration, the conductive layer includes a strip that, from the first location to the second location, has a width less than a circumference of the elongate part.

Abstract: Provided is a method of etching an etch layer using a polycarbonate layer as a mask. The method includes placing an etch structure in a reaction chamber, the etch structure including an etch layer underlying a polycarbonate layer, the polycarbonate layer having apertures. The etch layer is then etched using a low pressure-high density plasma generate at a pressure in the range of approximately 1 to 30 millitorr where the ionized particle concentration is at least 10.sup.11 ions/cm.sup.3 and where the ionized particle concentration is substantially equal throughout the volume of the reaction chamber. To increase the etch rate, the etch structure can be heated or biased. To decrease the etch rate, an inert gas can be added to the process gas mixture used to form the plasma.

Abstract: In a process for fabricating a bipolar transistor with a single polysilicon layer, a silicon nitride layer 22 and a phospho-silicate glass layer 24 are formed on top of the polysilicon layer and the link oxide layers. The glass layer 24 has a high etch selectivity compared to the nitride layer 22 so that the glass layer may be overetched above the emitter polysilicon region without overetching the link oxide. The nitride layer is then removed by etching without significantly affecting the link oxide layer. Thus the emitter metal contact may be self-aligned on top of the emitter polysilicon region 14, 114.