Abstract: Bond pad structures and methods for fabricating bond pad structures. A bond pad and a plurality of fill lines are formed on the top surface of a dielectric layer. The fill lines are arranged on the top surface of the dielectric layer adjacent to the bond pad, and may be separated from the bond pad by a fill keep-out zone. One or more Under Bump Metallurgy (UBM) layers may be arranged on the bond pad and may extend outwardly to overlap with the fill lines.

Abstract: Bond pad structures and methods for fabricating bond pad structures. A bond pad and a plurality of fill lines are formed on the top surface of a dielectric layer. The fill lines are arranged on the top surface of the dielectric layer adjacent to the bond pad, and may be separated from the bond pad by a fill keep-out zone. One or more Under Bump Metallurgy (UBM) layers may be arranged on the bond pad and may extend outwardly to overlap with the fill lines.

Abstract: An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.

Abstract: An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.

Abstract: An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.

Abstract: Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate including a GeOx layer formed thereon having a first thickness, removing a portion of the GeOx layer by exposing the semiconductor substrate to a NF3/NH3 plasma dry etch so as to reduce the first thickness of the GeOx layer to a second thickness, and depositing a high-k material over the GeOx layer of the semiconductor substrate.

Abstract: An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.