Patents by Inventor Krupaker Murali Subramanian

Krupaker Murali Subramanian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trim process for critical dimension control for integrated circuits
    Patent number: 7910483
    Abstract: Methods of etching substrates employing a trim process for critical dimension control for integrated circuits are disclosed. In one embodiment, the method of etching includes providing a first hard mask layer over a target layer; providing a second hard mask layer over the first hard mask layer; providing a photoresist layer over the second hard mask layer; forming a pattern in the photoresist layer; transferring the pattern into the second hard mask layer; and trimming the second hard mask layer with the photoresist layer on top of the second hard mask layer. The top surface of the second hard mask layer is protected by the photoresist and the substrate is protected by the overlying first hard mask layer during the trim etch, which can therefore be aggressive.
    Type: Grant
    Filed: February 2, 2010
    Date of Patent: March 22, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Mirzafer K Abatchev, Krupaker Murali Subramanian, Baosuo Zhou
  • TRIM PROCESS FOR CRITICAL DIMENSION CONTROL FOR INTEGRATED CIRCUITS
    Publication number: 20100173498
    Abstract: Methods of etching substrates employing a trim process for critical dimension control for integrated circuits are disclosed. In one embodiment, the method of etching includes providing a first hard mask layer over a target layer; providing a second hard mask layer over the first hard mask layer; providing a photoresist layer over the second hard mask layer; forming a pattern in the photoresist layer; transferring the pattern into the second hard mask layer; and trimming the second hard mask layer with the photoresist layer on top of the second hard mask layer. The top surface of the second hard mask layer is protected by the photoresist and the substrate is protected by the overlying first hard mask layer during the trim etch, which can therefore be aggressive.
    Type: Application
    Filed: February 2, 2010
    Publication date: July 8, 2010
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Mirzafer K. Abatchev, Krupaker Murali Subramanian, Baosuo Zhou