Abstract: A device includes a transistor, a backside via, and a pair of sidewall spacers. The transistor includes a gate structure, a channel layer surrounded by the gate structure, and a first source/drain structure and a second source/drain structure connected to the channel layer. The backside via is under and connected to the first source/drain structure and includes a first portion, a second portion between the first portion and the first source/drain structure, and a third portion tapering from the first portion to the second portion in a cross-sectional view. The pair of sidewall spacers are on opposite sidewalls of the second portion of the backside via but not on opposite sidewalls of the first portion of the backside via.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.

Abstract: A bonding structure that may be used to form 3D-IC devices is formed using first oblong bonding pads on a first substrate and second oblong bonding pads one a second substrate. The first and second oblong bonding pads are laid crosswise, and the bond is formed. Viewed in a first cross-section, the first bonding pad is wider than the second bonding pad. Viewed in a second cross-section at a right angle to the first, the second bonding pad is wider than the first bonding pad. Making the bonding pads oblong and angling them relative to one another reduces variations in bonding area due to shifts in alignment between the first substrate and the second substrate. The oblong shape in a suitable orientation may also be used to reduce capacitive coupling between one of the bonding pads and nearby wires.

Abstract: A semiconductor device includes a semiconductor substrate having a first region and a second region, insulators, gate stacks, and first and second S/Ds. The first and second regions respectively includes at least one first semiconductor fin and at least one second semiconductor fin. A width of a middle portion of the first semiconductor fin is equal to widths of end portions of the first semiconductor fin. A width of a middle portion of the second semiconductor fin is smaller than widths of end portions of the second semiconductor fin. The insulators are disposed on the semiconductor substrate. The first and second semiconductor fins are sandwiched by the insulators. The gate stacks are over a portion of the first semiconductor fin and a portion of the second semiconductor fin. The first and second S/Ds respectively covers another portion of the first semiconductor fin and another portion of the second semiconductor fin.

Abstract: A protecting method for preventing solder crack failure in an electronic product is provided. Firstly, a step (a) is performed to confirm that a crack incidence rate of a metallic solder material in a printed circuit board is high. In a step (b), a protecting mechanism of controlling the electronic product to enter an idle mode and leave the idle mode is activated. Consequently, an operating temperature of the electronic product decreases at a first average drop rate.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor including first chip and a second chip. The first chip includes a first substrate, a plurality of photodetectors disposed in the first substrate, a first interconnect structure disposed on a front side of the first substrate, and a first bond structure disposed on the first interconnect structure. The second chip underlies the first chip. The second chip includes a second substrate, a plurality of semiconductor devices disposed on the second substrate, a second interconnect structure disposed on a front side of the second substrate, and a second bond structure disposed on the second interconnect structure. A first bonding interface is disposed between the second bond structure and the first bond structure. The second interconnect structure is electrically coupled to the first interconnect structure by way of the first and second bond structures.

Abstract: An asymmetric half-bridge converter is provided. The asymmetric half-bridge converter includes a switch circuit, a resonance tank, a current sensor, and a controller. The current sensor senses a waveform of a resonance current flowing through the resonance tank to generate a sensing result. The controller determines the sensing result. When the sensing result indicates that an ending current value of a primary resonance waveform of the resonance current is greater than a predetermined value, the controller performs a first switching operation on the switch circuit. When the sensing result indicates that the ending current value of the primary resonance waveform is less than or equal to the predetermined value, the controller performs a second switching operation on the switch circuit.

Abstract: Provided herein is N-((4,6-dimethyl-2-oxo-1,2-dihydropyridin-3-yl)methyl)-5-(ethyl (tetrahydro-2H-pyran-4-yl)amino)-4-methyl-4?-(morpholinomethyl)-[1,1?-biphenyl]-3-carboxamide hydrobromide. Also provided herein is a particular polymorph form of this compound.

Abstract: Provided herein is N-((4,6-dimethyl-2-oxo-1,2-dihydropyridin-3-yl)methyl)-5-(ethyl (tetrahydro-2H-pyran-4-yl)amino)-4-methyl-4?-(morpholinomethyl)-[1,1?-biphenyl]-3-carboxamide hydrobromide. Also provided herein is a particular polymorph form of this compound.

Abstract: Provided herein are compounds useful for the treatment of cancer.

Abstract: Provided herein are methods for the treatment of bladder cancer.

Abstract: Provided herein is N-((4,6-dimethyl-2-oxo-1,2-dihydropyridin-3-yl)methyl)-5-(ethyl (tetrahydro-2H-pyran-4-yl)amino)-4-methyl-4?-(morpholinomethyl)-[1,1?-biphenyl]-3-carboxamide hydrobromide. Also provided herein is a particular polymorph form of this compound.

Abstract: Provided herein is N-((4,6-dimethyl-2-oxo-1,2-dihydropyridin-3-yl)methyl)-5-(ethyl (tetrahydro-2H-pyran-4-yl)amino)-4-methyl-4?-(morpholinomethyl)-[1,1?-biphenyl]-3-carboxamide hydrobromide. Also provided herein is a particular polymorph form of this compound.

Abstract: Provided herein are compounds useful for the treatment of cancer.

Abstract: Provided herein are compounds useful for the treatment of cancer.

Abstract: Provided herein are compounds useful for the treatment of cancer.

Abstract: Provided herein are compounds useful for the treatment of cancer.

Abstract: Provided herein is N-((4,6-dimethyl-2-oxo-1,2-dihydropyridin-3-yl)methyl)-5-(ethyl (tetrahydro-2H-pyran-4-yl)amino)-4-methyl-4?-(morpholinomethyl)-[1,1?-biphenyl]-3-carboxamide hydrobromide. Also provided herein is a particular polymorph form of this compound.

Abstract: Provided herein is N-((4,6-dimethyl-2-oxo-1,2-dihydropyridin-3-yl)methyl)-5-(ethyl (tetrahydro-2H-pyran-4-yl)amino)-4-methyl-4?-(morpholinomethyl)-[1,1?-biphenyl]-3-carboxamide hydrobromide. Also provided herein is a particular polymorph form of this compound.