Patents by Inventor Kuan-Chun Lin
Kuan-Chun Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11990525Abstract: A first source/drain structure is disposed over a substrate. A second source/drain structure is disposed over the substrate. An isolation structure is disposed between the first source/drain structure and the second source/drain structure. The first source/drain structure and a first sidewall of the isolation structure form a first interface that is substantially linear. The second source/drain structure and a second sidewall of the isolation structure form a second interface that is substantially linear. A first source/drain contact surrounds the first source/drain structure in multiple directions. A second source/drain contact surrounds the second source/drain structure in multiple directions. The isolation structure is disposed between the first source/drain contact and the second source/drain contact.Type: GrantFiled: May 27, 2022Date of Patent: May 21, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ta-Chun Lin, Kuan-Lin Yeh, Chun-Jun Lin, Kuo-Hua Pan, Mu-Chi Chiang, Jhon Jhy Liaw
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Patent number: 11974367Abstract: A lighting device includes a light board and a light dimmer circuit. The light board includes multiple first light emitting elements and second light emitting elements. The first light emitting elements are disposed in a first area of the light board. The second light emitting elements are disposed in a second area of the light board. The light dimmer circuit is configured to drive the second light emitting elements to generate flickering lights from the second area of the light board, and is configured to drive the first light emitting elements to generate non-flickering lights from the first area of the light board.Type: GrantFiled: October 4, 2022Date of Patent: April 30, 2024Assignee: DELTA ELECTRONICS, INC.Inventors: Chih-Hsien Wang, Ming-Chieh Cheng, Po-Yen Chen, Shih-Chieh Chang, Kuan-Hsien Tu, Xiu-Yi Lin, Ling-Chun Wang
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Publication number: 20240128420Abstract: A display panel including a circuit board, a plurality of bonding pads, a plurality of light emitting devices, and a plurality of solder patterns is provided. The bonding pads are disposed on the circuit board, and each includes a first metal layer and a second metal layer. The second metal layer is located between the first metal layer and the circuit board. The first metal layer includes an opening overlapping the second metal layer. A material of the first metal layer is different from a material of the second metal layer. The light emitting devices are electrically bonded to the bonding pads. Each of the solder patterns electrically connects one of the light emitting devices and one of the bonding pads. The solder patterns each contact the second metal layer through the opening of the first metal layer of one of the bonding pads to form a eutectic bonding.Type: ApplicationFiled: December 6, 2022Publication date: April 18, 2024Applicant: AUO CorporationInventors: Chia-Hui Pai, Tai-Tso Lin, Wen-Hsien Tseng, Wei-Chieh Chen, Kuan-Yi Lee, Chih-Chun Yang
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Publication number: 20240114631Abstract: A protecting method for preventing solder crack failure in an electronic product is provided. Firstly, a step (a) is performed to confirm that a crack incidence rate of a metallic solder material in a printed circuit board is high. In a step (b), a protecting mechanism of controlling the electronic product to enter an idle mode and leave the idle mode is activated. Consequently, an operating temperature of the electronic product decreases at a first average drop rate.Type: ApplicationFiled: December 8, 2022Publication date: April 4, 2024Inventors: Tsung-Lung LIN, Kuan-Yu CHEN, Yi-Chun HUANG
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Publication number: 20240096784Abstract: Some embodiments of the present disclosure relate to an integrated chip including an extended via that spans a combined height of a wire and a via and that has a smaller footprint than the wire. The extended via may replace a wire and an adjoining via at locations where the sizing and the spacing of the wire are reaching lower limits. Because the extended via has a smaller footprint than the wire, replacing the wire and the adjoining via with the extended via relaxes spacing and allows the size of the pixel to be further reduced. The extended via finds application for capacitor arrays used for pixel circuits.Type: ApplicationFiled: January 3, 2023Publication date: March 21, 2024Inventors: Meng-Hsien Lin, Hsing-Chih Lin, Ming-Tsong Wang, Min-Feng Kao, Kuan-Hua Lin, Jen-Cheng Liu, Dun-Nian Yaung, Ko Chun Liu
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Patent number: 11139384Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.Type: GrantFiled: September 4, 2019Date of Patent: October 5, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Chih Lai, Yun-Tzu Chang, Wei-Ming Hsiao, Nien-Ting Ho, Shih-Min Chou, Yang-Ju Lu, Ching-Yun Chang, Yen-Chen Chen, Kuan-Chun Lin, Chi-Mao Hsu
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Publication number: 20200006514Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.Type: ApplicationFiled: September 4, 2019Publication date: January 2, 2020Inventors: Kuo-Chih Lai, Yun-Tzu Chang, Wei-Ming Hsiao, Nien-Ting Ho, Shih-Min Chou, Yang-Ju Lu, Ching-Yun Chang, Yen-Chen Chen, Kuan-Chun Lin, Chi-Mao Hsu
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Patent number: 10497704Abstract: A method of fabricating a buried word line structure includes providing a substrate with a word line trench therein. Two source/drain doped regions are disposed in the substrate at two sides of the word line trench. Later, a silicon oxide layer is formed to cover the word line trench. A titanium nitride layer is formed to cover the silicon oxide layer. Next, a tilt ion implantation process is performed to implant silicon atoms into the titanium nitride layer to transform part of the titanium nitride layer into a titanium silicon nitride layer. A conductive layer is formed in the word line trench. Subsequently, part of the conductive layer, part of the titanium silicon nitride layer and part of the silicon oxide layer are removed to form a recess. Finally, a cap layer fills in the recess.Type: GrantFiled: December 20, 2018Date of Patent: December 3, 2019Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.Inventors: Ger-Pin Lin, Kuan-Chun Lin, Chi-Mao Hsu, Shu-Yen Chan, Shih-Fang Tzou, Tsuo-Wen Lu, Tien-Chen Chan, Feng-Yi Chang, Shih-Kuei Yen, Fu-Che Lee
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Patent number: 10490643Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.Type: GrantFiled: November 24, 2015Date of Patent: November 26, 2019Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Chih Lai, Yun-Tzu Chang, Wei-Ming Hsiao, Nien-Ting Ho, Shih-Min Chou, Yang-Ju Lu, Ching-Yun Chang, Yen-Chen Chen, Kuan-Chun Lin, Chi-Mao Hsu
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Publication number: 20190229014Abstract: A method for fabricating a semiconductor structure is disclosed. A bit line is formed on a substrate. The bit line comprises a tungsten layer and cap layer on the tungsten layer. A low-temperature physical vapor deposition (PVD) process is performed to deposit a silicon nitride spacer layer covering the bit line and the substrate. The silicon nitride spacer layer is in direct contact with the tungsten layer. The low-temperature PVD process is performed at a temperature ranging between 200˜400° C.Type: ApplicationFiled: February 4, 2018Publication date: July 25, 2019Inventors: Kuan-Chun Lin, Hsin-Fu Huang, Wei-Chih Chen
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Publication number: 20190164977Abstract: A method of fabricating a buried word line structure includes providing a substrate with a word line trench therein. Two source/drain doped regions are disposed in the substrate at two sides of the word line trench. Later, a silicon oxide layer is formed to cover the word line trench. A titanium nitride layer is formed to cover the silicon oxide layer. Next, a tilt ion implantation process is performed to implant silicon atoms into the titanium nitride layer to transform part of the titanium nitride layer into a titanium silicon nitride layer. A conductive layer is formed in the word line trench. Subsequently, part of the conductive layer, part of the titanium silicon nitride layer and part of the silicon oxide layer are removed to form a recess. Finally, a cap layer fills in the recess.Type: ApplicationFiled: December 20, 2018Publication date: May 30, 2019Inventors: Ger-Pin Lin, Kuan-Chun Lin, Chi-Mao Hsu, Shu-Yen Chan, Shih-Fang Tzou, Tsuo-Wen Lu, Tien-Chen Chan, Feng-Yi Chang, Shih-Kuei Yen, Fu-Che Lee
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Publication number: 20190067293Abstract: A method of fabricating a buried word line structure includes providing a substrate with a word line trench therein. Two source/drain doped regions are disposed in the substrate at two sides of the word line trench. Later, a silicon oxide layer is formed to cover the word line trench. A titanium nitride layer is formed to cover the silicon oxide layer. Next, a tilt ion implantation process is performed to implant silicon atoms into the titanium nitride layer to transform part of the titanium nitride layer into a titanium silicon nitride layer. A conductive layer is formed in the word line trench. Subsequently, part of the conductive layer, part of the titanium silicon nitride layer and part of the silicon oxide layer are removed to form a recess. Finally, a cap layer fills in the recess.Type: ApplicationFiled: September 21, 2017Publication date: February 28, 2019Inventors: Ger-Pin Lin, Kuan-Chun Lin, Chi-Mao Hsu, Shu-Yen Chan, Shih-Fang Tzou, Tsuo-Wen Lu, Tien-Chen Chan, Feng-Yi Chang, Shih-Kuei Yen, Fu-Che Lee
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Patent number: 10217750Abstract: A method of fabricating a buried word line structure includes providing a substrate with a word line trench therein. Two source/drain doped regions are disposed in the substrate at two sides of the word line trench. Later, a silicon oxide layer is formed to cover the word line trench. A titanium nitride layer is formed to cover the silicon oxide layer. Next, a tilt ion implantation process is performed to implant silicon atoms into the titanium nitride layer to transform part of the titanium nitride layer into a titanium silicon nitride layer. A conductive layer is formed in the word line trench. Subsequently, part of the conductive layer, part of the titanium silicon nitride layer and part of the silicon oxide layer are removed to form a recess. Finally, a cap layer fills in the recess.Type: GrantFiled: September 21, 2017Date of Patent: February 26, 2019Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.Inventors: Ger-Pin Lin, Kuan-Chun Lin, Chi-Mao Hsu, Shu-Yen Chan, Shih-Fang Tzou, Tsuo-Wen Lu, Tien-Chen Chan, Feng-Yi Chang, Shih-Kuei Yen, Fu-Che Lee
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Patent number: 9853123Abstract: A semiconductor structure includes a substrate having thereon a dielectric layer. An opening is formed in the dielectric layer. The opening includes a bottom surface and a sidewall surface. A diffusion barrier layer is conformally disposed along the sidewall surface and the bottom surface of the opening. A nucleation metal layer is conformally disposed on the diffusion barrier layer. A bulk metal layer is disposed on the nucleation metal layer. A film-growth retarding layer is disposed between the nucleation metal layer and the bulk metal layer.Type: GrantFiled: October 28, 2015Date of Patent: December 26, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Chin Hung, Wei-Chuan Tsai, Kuan-Chun Lin
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Publication number: 20170207060Abstract: A test structure for electron beam inspection and a method for defect determination using electron beam inspection are provided. The test structure for electron beam inspection includes a semiconductor substrate, at least two conductive regions disposed on the semiconductor substrate, a connection structure disposed on the two conductive regions, and a cap dielectric layer disposed on the connection structure. The method for defect determination using the electron beam inspection includes the following steps. An electron beam inspection is preformed to a test structure with an instant detector and a lock-in amplifier. Signals received by the detector within a period of time are amplified by the lock-in amplifier. A defect in the test structure is determined by monitoring the signals received by the detector and amplified by the lock-in amplifier. The inspection accuracy is improved by the test structure and the method for defect determination in the present invention.Type: ApplicationFiled: January 20, 2016Publication date: July 20, 2017Inventors: Kuan-Chun Lin, Chih-Chieh Chou, Shih-Cheng Chen, Chung-Chih Hung, Yung-Teng Tsai, Chi-Hung Chan
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Patent number: 9711326Abstract: A test structure for electron beam inspection and a method for defect determination using electron beam inspection are provided. The test structure for electron beam inspection includes a semiconductor substrate, at least two conductive regions disposed on the semiconductor substrate, a connection structure disposed on the two conductive regions, and a cap dielectric layer disposed on the connection structure. The method for defect determination using the electron beam inspection includes the following steps. An electron beam inspection is preformed to a test structure with an instant detector and a lock-in amplifier. Signals received by the detector within a period of time are amplified by the lock-in amplifier. A defect in the test structure is determined by monitoring the signals received by the detector and amplified by the lock-in amplifier. The inspection accuracy is improved by the test structure and the method for defect determination in the present invention.Type: GrantFiled: January 20, 2016Date of Patent: July 18, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuan-Chun Lin, Chih-Chieh Chou, Shih-Cheng Chen, Chung-Chih Hung, Yung-Teng Tsai, Chi-Hung Chan
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Publication number: 20170148891Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.Type: ApplicationFiled: November 24, 2015Publication date: May 25, 2017Inventors: Kuo-Chih Lai, Yun-Tzu Chang, Wei-Ming Hsiao, Nien-Ting Ho, Shih-Min Chou, Yang-Ju Lu, Ching-Yun Chang, Yen-Chen Chen, Kuan-Chun Lin, Chi-Mao Hsu
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Publication number: 20170125548Abstract: A semiconductor structure includes a substrate having thereon a dielectric layer. An opening is formed in the dielectric layer. The opening includes a bottom surface and a sidewall surface. A diffusion barrier layer is conformally disposed along the sidewall surface and the bottom surface of the opening. A nucleation metal layer is conformally disposed on the diffusion barrier layer. A bulk metal layer is disposed on the nucleation metal layer. A film-growth retarding layer is disposed between the nucleation metal layer and the bulk metal layer.Type: ApplicationFiled: October 28, 2015Publication date: May 4, 2017Inventors: Kuo-Chin Hung, Wei-Chuan Tsai, Kuan-Chun Lin