Abstract: An interconnect structure is provided. The interconnect structure includes a first metal line and a second metal line surrounded by a first dielectric layer, a dielectric block over a portion of the first dielectric layer between the first metal line and the second metal line, and a second dielectric layer over the dielectric block, the first metal line and the second metal line. A bottom surface of the second dielectric layer is lower than a top surface of the dielectric block. The interconnect structure also includes a first via surrounded by the second dielectric layer and electrically connected to the first metal line.

Abstract: Some embodiments of the present disclosure relate to an integrated chip, including a semiconductor substrate and a dielectric layer disposed over the semiconductor substrate. A pair of metal lines are disposed over the dielectric layer and laterally spaced apart from one another by a cavity. A barrier layer structure extends along nearest neighboring sidewalls of the pair of metal lines such that the cavity is defined by inner sidewalls of the barrier layer structure and a top surface of the dielectric layer.

Abstract: A coupling process for producing biodiesel from a waste FOG including: among others, 1) removing solid impurities from a waste FOG, then mixing with an alcohol and liquid acid catalyst to generate a pre-esterified mixture; 2) mixing the mixture with water, and charging the mixture to separate an aqueous phase to remove metal ions to obtain an esterification product II; 3) mixing the product II with a vulcanizator and H2 to generate a product I; 4) and separating the product I to obtain an oil phase, mixing the oil phase with H2 and passing the mixture into a fixed-bed reactor, and using a gas-liquid separator for separation to obtain an oil phase product II.

Abstract: A fault detection method, includes the following steps. A target sequence is received, the target sequence includes several data. A first moving average operation is performed on the target sequence to establish a first moving average sequence. A second moving average operation is performed on the target sequence to establish a second moving average sequence. A difference operation between the first moving average sequence and the second moving average sequence is performed to obtain a difference sequence, the difference sequence includes several difference values. An upper limit value is set. When one of the difference values is greater than the upper limit value, the target sequence is determines as abnormal.

Abstract: Some embodiments relate to a method for forming an integrated chip, the method includes forming a first conductive wire and a second conductive wire over a substrate. A dielectric structure is formed laterally between the first conductive wire and the second conductive wire. The dielectric structure comprises a first dielectric liner, a dielectric layer disposed between opposing sidewalls of the first dielectric liner, and a void between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is formed along an upper surface of the dielectric structure. Sidewalls of the dielectric capping layer are aligned with sidewalls of the dielectric structure.

Abstract: A light guide plate including a light emitting surface, a bottom surface, a light incident surface, multiple protrusion structures, and multiple grooves is provided. The light incident surface is connected between the light emitting surface and the bottom surface. The protrusion structures are disposed along a first direction and extend toward a second direction. The protrusion structures have a light condensing angle along the first direction, and the light condensing angle ranges from 10 degrees to 40 degrees. The grooves are disposed in the protrusion structures of the light guide plate. The grooves extend toward the first direction. The protrusion structures have a light receiving surface that defines each groove and is closer to the light incident surface. An angle between the light receiving surface and the bottom surface ranges from 35 degrees to 65 degrees. A display apparatus adopting the light guide plate is also provided.

Abstract: A pulp-molding mould assembly with a heating device is configured for integrally forming paper-made articles, and comprises: at least one mould and a number of heating tubes. The at least one mould has a main accommodating chamber which is defined with a main three-dimensional inner circumferential surface and a main inner space. The heating tubes are layer-by-layer arranged into multilayer-stacked structure in an evenly and annularly heating distribution around the main three-dimensional inner circumferential surface. This could not only make the heating tubes evenly heating against the main three-dimensional inner circumferential surface and reduce heat-conducting distances from the heating tubes to the respective paper-made article, for reducing a power consumption thereof, but also make the heating tubes evenly heating an air inside the main inner space for making the main accommodating chamber yields a thermal preservation effect by way of a vacuum heat-insulation thereof.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: The present invention relates to a heating device for the hot melting chamber of a hot melt glue gun, being a heating device fixed outside the hot melting chamber for heating. The heating device comprises two opposite holding parts configured on the outside of the hot melting chamber. Each holding part holds a resistor block. The resistor block on each side is tightly attached with an electrode plate. The electrode plates on the two sides are bonded together, so that the electrode plate can act as the common positive pole of the power supply to the resistor block, and meanwhile, the hot melting chamber can act as the common negative pole of the power supply to the resistor block. In this way, the configuration of an electrode plate under the resistor block can be omitted to reduce the size of the heating device, and less connecting wires are required between each resistor block and the positive and negative poles of the power supply, thus simplifying the welding and assembling operations.

Abstract: Semiconductor dies of a semiconductor die package are directly bonded, and a top metal region may be formed over the semiconductor dies. A plurality of conductive terminals may be formed over the top metal region. The conductive terminals are formed of copper (Cu) or another material that enables low-temperature deposition process techniques, such as electroplating, to be used to form the conductive terminal. In this way, the conductive terminals of the semiconductor die packages described herein may be formed at a relatively low temperature. This reduces the likelihood of thermal deformation of semiconductor dies in the semiconductor die packages. The reduced thermal deformation reduces the likelihood of warpage, breakage, and/or other types of damage to the semiconductor dies of the semiconductor die packages, which may increase performance and/or increase yield of semiconductor die packages.

Abstract: A pulp-molding process and an in-line intelligently drying apparatus therefor, comprise: implementing intelligent-circulation desiccating step and intelligently-wetting step in sequence, between pulp-dredging and forming step and thermo-compression forming step. Intelligent-circulation desiccating step comprises: in accordance to structure and/or outer contour of pulp-molding article, implementing combination of both infrared irradiation step and hot-wind blowing step, thereby self-adaptive eliminating different moistures contained within different portions of initially-compressed semi-finished product, to form evenly-dried semi-finished product. Intelligently-wetting step comprises: in accordance to structure and/or outer contour of pulp-molding article, spray-sprinkling predetermined different adaptive amount of water over different local location within dried semi-finished product, thereby forming wetted semi-finished product having averaged moisture content.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip may comprise a first metal line disposed over a substrate. A via may be disposed directly over a top of the first metal line and the via may comprise a first lower surface and a second lower surface above the first lower surface. A first dielectric structure may be disposed laterally adjacent to the first metal line and may be disposed along a sidewall of the first metal line. A first protective etch-stop structure may be disposed directly over a top of the first dielectric structure and the first protective etch-stop structure may vertically separate the second lower surface of the via from the top of the first dielectric structure.

Abstract: A semiconductor package includes multiple dies that share the same package pin. An output enable register provided on each die is used to select the die that drives an output to the shared pin. A hardware arbitration circuit ensures that two or more dies do not drive an output to the shared pin at the same time.

Abstract: During operation, an access point may provide a first WLAN and a second WLAN, where the first WLAN uses a WPA2-compatible authentication protocol and the second WLAN uses a WPA3-compatible authentication protocol. In response to an association request or a probe request associated with (or from) an electronic device, the access point may establish a connection with the electronic device using the first WLAN. Then, the access point may confirm, with a computer system, that a binding between a passphrase associated with the electronic device and the second WLAN exists. Alternatively, when the binding does not exist, the access point may establish the binding in the computer system. Next, the access point may perform a BSS transition of the electronic device from the first WLAN to the second WLAN.

Abstract: A computer-implemented method for partially supervised image segmentation having improved strong mask generalization includes obtaining, by a computing system including one or more computing devices, a machine-learned segmentation model, the machine-learned segmentation model including an anchor-free detector model and a deep mask head network, the deep mask head network including an encoder-decoder structure having a plurality of layers. The computer-implemented method includes obtaining, by the computing system, input data including tensor data. The computer-implemented method includes providing, by the computing system, the input data as input to the machine-learned segmentation model. The computer-implemented method includes receiving, by the computing system, output data from the machine-learned segmentation model, the output data including a segmentation of the tensor data, the segmentation including one or more instance masks.

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: The present invention provides a preparation method of a battery composite material, wherein a precursor with the chemical formula FePO4 is formed by introducing air or oxygen during calcination. The precursor is then reacted with a first reactant containing lithium atoms and a carbon source to form a battery composite material with the chemical formula LiFePO4.