Abstract: Gate cutting techniques disclosed herein form gate isolation fins to isolate metal gates of multigate devices from one another before forming the multigate devices, and in particular, before forming the metal gates of the multigate devices. An exemplary device includes a first multigate device having first source/drain features and a first metal gate that surrounds a first channel layer and a second multigate device having second source/drain features and a second metal gate that surrounds a second channel layer. A gate isolation fin, which separates the first metal gate and the second metal gate, includes a first dielectric layer having a first dielectric constant and a second dielectric layer having a second dielectric constant disposed over the first dielectric layer. The second dielectric constant is less than the first dielectric constant. A gate isolation end cap may be disposed on the gate isolation fin to provide additional isolation.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The method includes forming a first dielectric feature between first and the second fin structures, wherein each first and second fin structure includes first semiconductor layers and second semiconductor layers alternatingly stacked and in contact with the first dielectric layer. The method also includes removing the second semiconductor layers so that the first semiconductor layers of the first and second fin structures extend laterally from a first side and a second side of the first dielectric feature, respectively, trimming the first dielectric feature so that the first dielectric feature has a reduced thickness on both first and the second sides, and forming a gate electrode layer to surround each of the first semiconductor layers of the first and second fin structures.

Abstract: Methods and devices that include a multigate device having a channel layer disposed between a source feature and a drain feature, a metal gate that surrounds the channel layer, and a first air gap spacer interposing the metal gate and the source feature and a second air gap spacer interposing the metal gate and the drain feature. A backside contact extends to the source feature. A power line metallization layer is connected to the backside contact.

Abstract: A semiconductor device includes channel members vertically stacked, a gate structure wrapping around the channel members, a gate spacer disposed on sidewalls of the gate structure, an epitaxial feature abutting the channel members, and an inner spacer layer interposing the gate structure and the epitaxial feature. In a top view of the semiconductor device, the inner spacer layer has side portions in physical contact with the gate spacer and a middle portion stacked between the side portions. In a lengthwise direction of the channel members, the middle portion of the inner spacer layer is thicker than the side portions of the inner spacer layer.

Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: A bonding structure that may be used to form 3D-IC devices is formed using first oblong bonding pads on a first substrate and second oblong bonding pads one a second substrate. The first and second oblong bonding pads are laid crosswise, and the bond is formed. Viewed in a first cross-section, the first bonding pad is wider than the second bonding pad. Viewed in a second cross-section at a right angle to the first, the second bonding pad is wider than the first bonding pad. Making the bonding pads oblong and angling them relative to one another reduces variations in bonding area due to shifts in alignment between the first substrate and the second substrate. The oblong shape in a suitable orientation may also be used to reduce capacitive coupling between one of the bonding pads and nearby wires.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: A device structure according to the present disclosure may include a first die having a first substrate and a first interconnect structure, a second die having a second substrate and a second interconnect structure, and a third die having a third interconnect structure and a third substrate. The first interconnect structure is bonded to the second substrate via a first plurality of bonding layers. The second interconnect structure is bonded to the third interconnect structure via a second plurality of bonding layers. The third substrate includes a plurality of photodiodes and a first transistor. The second die includes a second transistor having a source connected to a drain of the first transistor, a third transistor having a gate connected to drain of the first transistor and the source of the second transistor, and a fourth transistor having a drain connected to the source of the third transistor.

Abstract: Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a substrate having a p-type well or an n-type well, a first base portion over the p-type well, a second base portion over the n-type well, a first plurality of channel members over the first base portion, a second plurality of channel members over the second base portion, an isolation feature disposed between the first base portion and the second base portion, and a deep isolation structure in the substrate disposed below the isolation feature.

Abstract: Disclosed is a method for forming a crystalline protective polysilicon layer which does not create defective voids during subsequent processes so as to provide effective protection to devices underneath. In one embodiment, a method for forming a semiconductor device, includes: depositing a protective coating on a first polysilicon layer; forming an epitaxial layer on the protective coating; and depositing a second polysilicon layer over the epitaxial layer, wherein the protective coating comprises a third polysilicon layer, wherein the third polysilicon layer is deposited at a first temperature in a range of 600-700 degree Celsius, and wherein the third polysilicon layer in the protect coating is configured to protect the first polysilicon layer when the second polysilicon layer is etched.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor including first chip and a second chip. The first chip includes a first substrate, a plurality of photodetectors disposed in the first substrate, a first interconnect structure disposed on a front side of the first substrate, and a first bond structure disposed on the first interconnect structure. The second chip underlies the first chip. The second chip includes a second substrate, a plurality of semiconductor devices disposed on the second substrate, a second interconnect structure disposed on a front side of the second substrate, and a second bond structure disposed on the second interconnect structure. A first bonding interface is disposed between the second bond structure and the first bond structure. The second interconnect structure is electrically coupled to the first interconnect structure by way of the first and second bond structures.

Abstract: A nozzle assembly for nailers includes a magazine connected to a body of the nailer and a base plate is connected to an end of the magazine. A nozzle has two grooves with which the two sides of the base plate are movably engaged. A plurality of nail guide holes are defined through the nozzle and communicate with openings defined in the base plate and slots defined in a side of the magazine so that nails engaged with the slots are sent to the nail guide holes to be ejected. Two hooks extend from the nozzle and a cap is mounted on the nozzle by engaging the two hooks with two apertures defined through the cap. Pins extend through the nozzle and are engaged with the base plate.

Abstract: A trigger assembly for a pneumatic nailer includes a frame having a threaded end on which an end member is threadedly mounted. A spring is biased between the body of the nailer and the frame. An end of a bar is connected to the frame and the other end of the bar is connected to a trigger. A limit member is movably connected to the frame and an engaging member is located on a first end of the limit member. An end member is threadedly mounted to the threaded end and a plurality of notches are defined in an end thereof. The engaging member of the limit member is engaged with on of the notches.

Abstract: A nozzle assembly for a pneumatic tool includes a base connected to a magazine and a rod extends from the base. A cover is pivotally connected to the base and a notch is defined in a side of the cover. A retaining member has a passage defined in an intermediate portion thereof so as to receive the rod therein. A spring is biased between a first end of the retaining member and the base. A second end of the retaining member has a hook which is disengagably engaged with the notch. The cover can be pivoted away from the base by releasing the hook from the notch so that the cover will not loose.

Abstract: A nozzle assembly for nailers includes a magazine connected to a body of the nailer and a base plate is connected to an end of the magazine. A nozzle has two grooves with which the two sides of the base plate are movably engaged. A plurality of nail guide holes are defined through the nozzle and communicate with openings defined in the base plate and slots defined in a side of the magazine so that nails engaged with the slots are sent to the nail guide holes to be ejected. Two hooks extend from the nozzle and a cap is mounted on the nozzle by engaging the two hooks with two apertures defined through the cap. Pins extend through the nozzle and are engaged with the base plate.

Abstract: A trigger assembly for a pneumatic nailer includes a frame having a threaded end on which an end member is threadedly mounted. A spring is biased between the body of the nailer and the frame. An end of a bar is connected to the frame and the other end of the bar is connected to a trigger. A limit member is movably connected to the frame and an engaging member is located on a first end of the limit member. An end member is threadedly mounted to the threaded end and a plurality of notches are defined in an end thereof. The engaging member of the limit member is engaged with on of the notches.