Abstract: A resource integration method includes the following steps: a receiving module receives access information from a guest operating system on the host device; the access information is used to determine whether the frame rate is lower than a frame rate threshold; when the receiving module determines that the frame rate is lower than the frame rate threshold, the receiving module transmits an external resource request signal to the receiving module; after the receiving module receives the external resource request signal, a resource management module (which is located in the bridge module) selects an optimal external device from a specific category (among a plurality of categories in a candidate list), and a calculation operation or a storage operation corresponding to the specific category is transmitted to the optimal external device for calculation or storage by the bridge module.

Abstract: An electronic device including a circuit structure, a bonding element and an electronic unit is disclosed. The circuit structure includes a conductive pad, and the conductive pad has an accommodating recess. At least a portion of the bonding element is disposed in the accommodating recess. The electronic unit is electrically connected to the conductive pad through the bonding element. The accommodating recess has a bottom surface and an opening opposite to the bottom surface, and a width of the bottom surface is greater than a width of the opening.

Abstract: An electronic includes an electronic element, an encapsulation layer surrounding the electronic element, a first circuit structure, a second circuit structure and a connecting structure. The encapsulation layer has a top surface, a bottom surface and an opening, wherein a sidewall of the opening connects the top surface and the bottom surface. The first circuit structure is disposed at the top surface of the encapsulation layer. The second circuit structure is disposed at the bottom surface of the encapsulation layer. The connecting structure is disposed in the opening, wherein the electronic element is electrically connected to the second circuit structure through the first circuit structure and the connecting structure. The connecting structure includes a first sub layer and a second sub layer, the first sub layer is located between the encapsulation layer and the second sub layer, and the first sub layer covers the sidewall of the opening.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.

Abstract: The present disclosure provides an imaging optical lens assembly, including, in order from an object side to an image side: a first lens element with negative refractive power having an object-side surface being concave in a paraxial region, a second lens element with positive refractive power, a third lens element with negative refractive power, a fourth lens element with positive refractive power, and a fifth lens element with negative refractive power having an image-side surface being concave in a paraxial region and at least one convex shape in an off-axial region on the image-side surface, wherein the imaging optical lens assembly has a total of five lens elements.

Abstract: A method for forming a packaged integrated circuit device includes providing a semiconductor wafer having a plurality of integrated circuit devices, each integrated circuit device extending into the semiconductor wafer to a first depth, and grinding a backside of the silicon wafer to no more than the first depth. The method further includes forming a backside cut between the integrated circuit devices. The backside cut extends to within the first depth, but the backside cut does not extend completely through the semiconductor wafer. The backside cut exposes a plurality of edges of each of the integrated circuit devices. The method further includes depositing, on the backside of the wafer, a metallization layer on a bottom surface of the integrated circuit devices and on the edges.

Abstract: The disclosure provides a key structure, including a carrier, a buffer layer, a circuit film, a balance rod and a key cap. The carrier includes a body and a positioning element protruding from the body. The positioning element has a positioning hole. The buffer layer is disposed around the positioning hole. The circuit film and the balance rod are disposed on the body. The balance rod has an opposite first end portion and a second end portion. The first end portion passes through the positioning hole and presses against the buffer layer. The key cap is connected with the second end portion, and the circuit film and the balance rod are positioned between the key cap and the body.

Abstract: The disclosure provides a key structure, including a carrier, a buffer layer, a circuit film, a balance rod and a key cap. The carrier includes a body and a positioning element protruding from the body. The positioning element has a positioning hole. The buffer layer is disposed around the positioning hole. The circuit film and the balance rod are disposed on the body. The balance rod has an opposite first end portion and a second end portion. The first end portion passes through the positioning hole and presses against the buffer layer. The key cap is connected with the second end portion, and the circuit film and the balance rod are positioned between the key cap and the body.

Abstract: A novel mask read-only memory is provided. After the mask read-only memory leaves the factory, the mask read-only memory has two types of cell structures. The first type cell structure records a first storing state (e.g. the logic state “1”), and the second type cell structure records a second storing state (the logic state “0”).

Abstract: A capacitive touch panel comprises a transparent substrate, a light shielding layer and a capacitive sensing circuit device. The capacitive sensing circuit device is disposed above a surface of the transparent substrate, and comprises a sensing region and a plurality of metal leads. The sensing region comprises a plurality of metallic bridging wires. The plurality of metal leads is disposed on the sides of the sensing region, and is electrically connected to the sensing region. The area of the light shielding layer overlaps the plurality of conductive bridging wires.