Abstract: Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and controlling the delivery of an RF bias signal and a pulsed voltage waveform to one or more electrodes within a plasma processing chamber. The apparatus and methods disclosed herein can be useful to at least minimize or eliminate a microloading effect created while processing small dimension features that have differing densities across various regions of a substrate. The plasma processing methods and apparatus described herein are configured to improve the control of various characteristics of the generated plasma and control an ion energy distribution (IED) of the plasma generated ions that interact with a surface of a substrate during plasma processing.

Abstract: Embodiment discloses a photomask and a photomask fixing device. The photomask includes a photomask body. The photomask body includes a first side surface and a second side surface arranged in parallel, and a pattern surface connecting the first side surface and the second side surface. The first side surface and the second side surface are respectively provided with a plurality of fixing holes configured for fitting with a fixing portion to fix the photomask body. In the above photomask, two parallel side surfaces positioned on the pattern surface are used as fixing surface of the photomask, i.e., the first side surface and the second side surface. The first side surface and the second side surface are respectively provided with a plurality of fixing holes configured for fitting with the fixing portion configured to fix the photomask, to strengthen fixation of the photomask.

Abstract: A protective film with high hardness and low friction coefficient includes an interface layer, a buffer layer, and a high-hardness passivation layer. The protective film has good wear resistance and low friction coefficient and can be applied to a mask package box for photolithography such as a deep ultraviolet (DUV) lithography, an extreme ultraviolet (EUV) lithography, an immersion lithography and a multiple patterning lithography of the photovoltaic and semiconductor industries. The protective film is used to protect the mask package box applied for photolithographic exposure and ensure the yield of the photolithographic process.

Abstract: A mask for evaluating overlay error comprises a plurality of replicate device regions and an overlay mark. The plurality of replicate device regions are disposed uniformly on the mask, wherein each comprises a plurality of device patterns; and a plurality of current layer check patterns are formed adjacent to the plurality of device patterns. The overlay mark is formed on the corner of the mask's peripheral region. In particular, the current layer check patterns are configured to evaluate the pattern offset of a current mask, and the overlay mark and the current layer check patterns are configured to evaluate the overlay error by performing an exposure process using the current mask and a next mask.