Abstract: A method of forming a semiconductor device includes forming a fin structure having a stack of alternating first semiconductor layers and second semiconductor layers over a substrate, the first semiconductor layers and the second semiconductor layers having different compositions, forming a dummy gate structure across the fin structure, forming gate spacers on opposite sidewalls of the dummy gate structure, respectively, removing the dummy gate structure to form a gate trench between the gate spacers, removing portions of the first semiconductor layers in the gate trench, such that the second semiconductor layers are suspended in the gate trench to serve as nanosheets, forming a first titanium nitride layer wrapping around the nanosheets, wherein an atomic ratio of titanium to nitrogen of the first titanium nitride layer is less than 1, and forming a metal fill layer over the first titanium nitride layer.

Abstract: A display panel including a circuit board, a plurality of bonding pads, a plurality of light emitting devices, and a plurality of solder patterns is provided. The bonding pads are disposed on the circuit board, and each includes a first metal layer and a second metal layer. The second metal layer is located between the first metal layer and the circuit board. The first metal layer includes an opening overlapping the second metal layer. A material of the first metal layer is different from a material of the second metal layer. The light emitting devices are electrically bonded to the bonding pads. Each of the solder patterns electrically connects one of the light emitting devices and one of the bonding pads. The solder patterns each contact the second metal layer through the opening of the first metal layer of one of the bonding pads to form a eutectic bonding.

Abstract: A light-emitting element panel, including a temporary storage substrate, an auxiliary pattern layer, multiple adhesive patterns, and multiple light-emitting elements, is provided. The auxiliary pattern layer is disposed on the temporary storage substrate and has multiple openings. The adhesive patterns are respectively disposed in the openings of the auxiliary pattern layer. The light-emitting elements are respectively disposed on the adhesive patterns. A reaction rate of the auxiliary pattern layer to a laser is lower than a reaction rate of the adhesive pattern to the laser. Moreover, another light-emitting element panel is also provided.

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

Abstract: An organic light-emitting diode (OLED) display may have an array of pixels that each have OLED layers interposed between a cathode and an anode. The display may also include a planarization layer that is deposited using inkjet printing. To mitigate the need for dam structures to prevent overflow of the planarization layer during inkjet printing, capillary-flow-inducing structures may be included in the inactive area of the display. The topology of the capillary-flow-inducing structures may be propagated to a passivation layer such that an upper surface of the passivation layer has a similar topology as the capillary-flow-inducing structures. The planarization layer therefore undergoes capillary flow when deposited on the upper surface of the passivation layer. The capillary-flow-inducing structures may be formed from dots, rectangular strips, or trapezoidal strips. The capillary-flow-inducing structures may be formed from the same material as spacers in the active area or using another layer in the display.

Abstract: A device of mass transferring chips includes a first substrate, which includes a first surface with a chip-connecting area configured to attach a chip, a second surface opposite to the first surface, and a patterned recess. The patterned recess is disposed on the first surface or the second surface. A projection of at least a portion of the patterned recess on the first surface is spaced apart from the chip-connecting area. The device further includes a second substrate with a third surface. The third surface has a chip-receiving area configured to attach the chip from the first substrate.

Abstract: A display device includes a substrate, multiple spacers, multiple conductive particles, and a colloid layer. The spacers are disposed on the substrate. Each spacer has a first end closer to the substrate and a second end farther from the substrate, in which a width of the spacer is tapered from the first end to the second end. The conductive particles are disposed between the spacers. The colloid layer is disposed on the conductive particles and the spacers. A mother board is also disclosed.

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first contact layer on the first semiconductor layer; a second contact layer on the second semiconductor layer, wherein the first contact layer and the second contact layer comprise a metal material other than gold (Au) or copper (Cu); a first pad on the semiconductor stack; a second pad on the semiconductor stack.

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first contact layer on the first semiconductor layer; a second contact layer on the second semiconductor layer, wherein the first contact layer and the second contact layer comprise a metal material other than gold (Au) or copper (Cu); a first pad on the semiconductor stack; a second pad on the semiconductor stack.

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

Abstract: A smart effects unit disclosed includes effects modules, a control module and a switching device. The control module includes a processor, a user interface and a memory. The processor is connected to an musical instrument and effect modules through an input switch interface, such that the audio signal of the instrument is able to be inputted into the effects modules based on a combination configuration to generate a combined effect audio signal. The combination configuration defines the connection sequence of the plurality of effect modules. The user interface is provided to adjust each effect module and the connection sequence order of effect modules through the input interface to generate the combination configuration, which is stored in a memory. The switching device connected to the control module is provided to switch the control module between different combination configurations based on the combination configurations stored in the memory.

Abstract: A marked pixel unit includes at least one active element, a first dielectric layer, a color filter unit, a second dielectric layer, and at least one pixel electrode. The active element includes a source, a gate, and a drain. The first dielectric layer is configured to cover the gate. The color filter unit is disposed above the first dielectric layer, and has an alignment opening. The second dielectric layer is disposed above the active element and the color filter unit, and has a contact hole. The pixel electrode is disposed above the second dielectric layer, and electrically connected to the drain through the contact hole. The contact hole of the second dielectric layer is located outside the alignment opening.

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.