Patents by Inventor Kuang Jen J. Wu

Kuang Jen J. Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10737128
    Abstract: In one embodiment, a product includes a plurality of carbon nanotubes and a fill material in interstitial spaces between the carbon nanotubes for limiting or preventing fluidic transfer between opposite sides of the product except through interiors of the carbon nanotubes. Moreover, the longitudinal axes of the carbon nanotubes are substantially parallel, where an average inner diameter of the carbon nanotubes is about 20 nanometers or less. In addition, the ends of the carbon nanotubes are open and the fill material is impermeable or having an average porosity that is less than the average inner diameter of the carbon nanotubes.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: August 11, 2020
    Assignee: Lawrence Livermore National Securing, LLC
    Inventors: Francesco Fornasiero, Kuang Jen J. Wu, Sangil Kim
  • Publication number: 20180236287
    Abstract: In one embodiment, a product includes a plurality of carbon nanotubes and a fill material in interstitial spaces between the carbon nanotubes for limiting or preventing fluidic transfer between opposite sides of the product except through interiors of the carbon nanotubes. Moreover, the longitudinal axes of the carbon nanotubes are substantially parallel, where an average inner diameter of the carbon nanotubes is about 20 nanometers or less. In addition, the ends of the carbon nanotubes are open and the fill material is impermeable or having an average porosity that is less than the average inner diameter of the carbon nanotubes.
    Type: Application
    Filed: February 23, 2017
    Publication date: August 23, 2018
    Inventors: Francesco Fornasiero, Kuang Jen J. Wu, Sangil Kim
  • Patent number: 8969803
    Abstract: In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25° C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).
    Type: Grant
    Filed: May 5, 2010
    Date of Patent: March 3, 2015
    Assignee: Lawrence Livermore National Security, LLC
    Inventors: Vincenzo Lordi, Kuang Jen J. Wu, Daniel Aberg, Paul Erhart, Arthur W. Coombs, III, Benjamin W. Sturm
  • Patent number: 8362415
    Abstract: A method of analyzing biological material by exposing the biological material to a recognition element, that is coupled to a mass tag element, directing an ion beam of a mass spectrometer to the biological material, interrogating at least one region of interest area from the biological material and producing data, and distributing the data in plots.
    Type: Grant
    Filed: May 26, 2010
    Date of Patent: January 29, 2013
    Assignees: Lawrence Livermore National Security, LLC, Lawrence Berkeley National Laboratory
    Inventors: James S. Felton, Kuang Jen J. Wu, Mark G. Knize, Kristen S. Kulp, Joe W. Gray
  • Patent number: 8338916
    Abstract: In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal.
    Type: Grant
    Filed: December 22, 2010
    Date of Patent: December 25, 2012
    Assignee: Lawrence Livermore National Security, LLC
    Inventors: John William Sherohman, Jick Hong Yee, Arthur William Coombs, III, Kuang Jen J. Wu
  • Publication number: 20120161288
    Abstract: In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal.
    Type: Application
    Filed: December 22, 2010
    Publication date: June 28, 2012
    Applicant: Lawrence Livermore National Security, LLC
    Inventors: John William Sherohman, Jick Hong Yee, Arthur William Coombs, III, Kuang Jen J. Wu
  • Publication number: 20110147589
    Abstract: In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25° C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).
    Type: Application
    Filed: May 5, 2010
    Publication date: June 23, 2011
    Inventors: Vincenzo Lordi, Kuang Jen J. Wu, Daniel Aberg, Paul Erhart, Arthur W. Coombs, III, Benjamin W. Sturm
  • Publication number: 20100255602
    Abstract: A method of analyzing biological material by exposing the biological material to a recognition element, that is coupled to a mass tag element, directing an ion beam of a mass spectrometer to the biological material, interrogating at least one region of interest area from the biological material and producing data, and distributing the data in plots.
    Type: Application
    Filed: May 26, 2010
    Publication date: October 7, 2010
    Inventors: James S. Felton, Kuang Jen J. Wu, Mark G. Knize, Kristen S. Kulp, Joe W. Gray
  • Patent number: 7728287
    Abstract: A method of analyzing biological material by exposing the biological material to a recognition element, that is coupled to a mass tag element, directing an ion beam of a mass spectrometer to the biological material, interrogating at least one region of interest area from the biological material and producing data, and distributing the data in plots.
    Type: Grant
    Filed: March 1, 2007
    Date of Patent: June 1, 2010
    Assignee: Lawrence Livermore National Security, LLC
    Inventors: James S. Felton, Kuang Jen J. Wu, Mark G. Knize, Kristen S. Kulp, Joe W. Gray
  • Publication number: 20080210857
    Abstract: A method of analyzing biological material by exposing the biological material to a recognition element, that is coupled to a mass tag element, directing an ion beam of a mass spectrometer to the biological material, interrogating at least one region of interest area from the biological material and producing data, and distributing the data in plots.
    Type: Application
    Filed: March 1, 2007
    Publication date: September 4, 2008
    Inventors: James S. Felton, Kuang Jen J. Wu, Mark G. Knize, Kristen S. Kulp, Joe W. Gray
  • Patent number: 7224041
    Abstract: For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-? family heterostructure devices.
    Type: Grant
    Filed: May 28, 2004
    Date of Patent: May 29, 2007
    Assignee: The Regents of the University of California
    Inventors: John W. Sherohman, Arthur W. Coombs, III, Jick Hong Yee, Kuang Jen J. Wu