Abstract: An image sensor includes: a substrate; color filter units disposed on the substrate; and a grid structure disposed on the substrate and surrounding each of the color filter units. The grid structure includes: a first partition wall, disposed on the substrate, located between the color filter units; and a second partition wall, disposed directly on the first partition wall, located between the color filter units. A top width of the second partition wall is smaller than a bottom width of the second partition wall.

Abstract: A method for processing integrated circuit memory devices. The method includes supporting a partially completed substrate, the substrate comprising a plurality of MOS gate structures. Each of the gate structures has substantially vertical regions that define sides of the gate structures. The method forms a conformal dielectric layer overlying the gate structures. The conformal dielectric layer has a predetermined thickness of material that covers each of the gate structures including vertical regions. The method also forms sidewall spacers on the sides of the gate structures from the conformal dielectric layer using an anisotropic etching process and exposes a portion of the substrate region during the formation of the sidewall spacers using the anisotropic etching process to cause physical damage (e.g., plasma damage, cracks) to a portion of the exposed portion of the substrate.

Abstract: A method for processing integrated circuit memory devices. The method includes supporting a partially completed substrate, the substrate comprising a plurality of MOS gate structures. Each of the gate structures has substantially vertical regions that define sides of the gate structures. The method forms a conformal dielectric layer overlying the gate structures. The conformal dielectric layer has a predetermined thickness of material that covers each of the gate structures including vertical regions. The method also forms sidewall spacers on the sides of the gate structures from the conformal dielectric layer using an anisotropic etching process and exposes a portion of the substrate region during the formation of the sidewall spacers using the anisotropic etching process to cause physical damage (e.g., plasma damage, cracks) to a portion of the exposed portion of the substrate.

Abstract: The disclosed game keyboard device comprising: a key matrix, a direction control mechanism, and a microprocessor. A switch key is used to change the direction control mechanism between the functions of a joystick and a mouse. The game keyboard device can selectively implement the function of the joystick or mouse through a single direction control mechanism. Therefore, the hardware manufacturing cost of the game keyboard device can be considerably reduced.

Abstract: The disclosed game keyboard device comprising: a key matrix, a direction control mechanism, and a microprocessor. A switch key is used to change the direction control mechanism between the functions of a joystick and a mouse. The game keyboard device can selectively implement the function of the joystick or mouse through a single direction control mechanism. Therefore, the hardware manufacturing cost of the game keyboard device can be considerably reduced.

Abstract: The disclosed interactive keyboard includes a key matrix, a microprocessor, and a memory unit. A keyboard key management driver is enabled to download the key codes for the application software or to set a key code to a designated key as defined by the user. The user can thus selectively perform specific commands in the application software from keys on the keyboard, speeding up the operations in the application software.

Abstract: A wear sleeve for use with the active face of an associated seal unit. The wear sleeve includes a radial flange and an axial flange having a plurality of grooves therein. The grooves are formed on an inner margin of the blank while the blank is in a flat condition. Thereafter, the axial flange is drawn in a skirt forming die so as to create an outer surface on the axial flange having a hydrodynamic pattern thereon. The grooves are formed in a sinusoidal pattern, and the inner surface of the skirt forming die is free from formations creating interference with the skirt.

Abstract: A fluoride silicate glass (FSG) layer, comprising a plasma enhanced oxide layer (PEOX layer) on a surface of the FSG layer, is positioned on a substrate of a semiconductor wafer. An etching tank, employed as a plug hole or a trench, is formed in the FSG layer. A first plasma ashing process, using oxygen or a gas mixture of nitride and hydrogen as a reacting gas, is then performed to remove fluorine atoms for a predetermined thickness of a surface of the etching tank. A wet cleaning process is performed thereafter. By performing a second plasma ashing process, using oxygen or a gas mixture of nitride and hydrogen as a reacting gas, residual fluorine atoms are removed for the predetermined thickness of the surface of the etching tank. Finally, the etching tank is filled with a conductive material so as to form a conductor.